13006 TRANSISTOR
Abstract: transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D
Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken
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PMBFJ620
OT363
MSC895
13006 TRANSISTOR
transistor 13006
E 13006
13006
MCD217
PMBFJ620
FET MARKING
13006 D
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E 13007-1
Abstract: transistor E 13007 13007 applications comparator circuit using op-amp AN-344 C1995 LF13006 LF13007 LF411 LF412
Text: National Semiconductor Application Note 344 March 1984 Some basic circuit configurations for using the LF13006 and LF13007 are shown in Figures 1 through 4 In each case only the Digital Gain Set and an op-amp are required although in some instances the amplifier may need external
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LF13006
LF13007
E 13007-1
transistor E 13007
13007 applications
comparator circuit using op-amp
AN-344
C1995
LF411
LF412
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PMBFJ620,115
Abstract: No abstract text available
Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken
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PMBFJ620
OT363
PMBFJ620,115
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Untitled
Abstract: No abstract text available
Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 3 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Observe precautions for handling
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PMBFJ620
OT363
JESD625-A
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PMBFJ620
Abstract: No abstract text available
Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken
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PMBFJ620
OT363
771-PMBFJ620-T/R
PMBFJ620
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Untitled
Abstract: No abstract text available
Text: LB1980JH Ordering number : ENA0231 LB1980JH Monolithic Linear IC Three-Phase Brushless Motor Driver Overview The LB1980JH is a 3-phase brushless motor driver that is particularly appropriate for automotive. Functions • • • • • • 3-phase full-wave drive
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LB1980JH
ENA0231
LB1980JH
A0231-9/9
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lb1980
Abstract: No abstract text available
Text: Ordering number : ENA0231A LB1980JH Monolithic Digital IC 3-Phase Brushless Motor Driver http://onsemi.com Overview The LB1980JH is a 3-phase brushless motor driver that is particularly appropriate for automotive. Functions • 3-phase full-wave drive • Built-in torque ripple correction circuit variable correction ratio
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ENA0231A
LB1980JH
LB1980JH
A0231-7/7
lb1980
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lb1980
Abstract: No abstract text available
Text: LB1980H Ordering number : EN5974A SANYO Semiconductors DATA SHEET Monolithic Linear IC LB1980H Three-Phase Brushless Motor Driver for VCR Capstan Motors Overview The LB1980H is a 3-phase brushless motor driver that is particularly appropriate for VCR capstan motor drivers.
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EN5974A
LB1980H
LB1980H
lb1980
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN5974B LB1980H Monolithic Digital IC For VCR Capstan Motors http://onsemi.com 3-Phase Brushless Motor Driver Overview The LB1980JH is a 3-phase brushless motor driver that is particularly appropriate for VCR capstan motor drivers. Functions
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EN5974B
LB1980H
LB1980JH
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HSOP28H
Abstract: ILB01756 LB1980JH
Text: Ordering number : ENA0231A Monolithic Digital IC LB1980JH 3-Phase Brushless Motor Driver Overview The LB1980JH is a 3-phase brushless motor driver that is particularly appropriate for automotive. Functions • 3-phase full-wave drive • Built-in torque ripple correction circuit variable correction ratio
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ENA0231A
LB1980JH
LB1980JH
A0231-7/7
HSOP28H
ILB01756
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Untitled
Abstract: No abstract text available
Text: LB1980H Ordering number : EN5974A Monolithic Linear IC LB1980H Three-Phase Brushless Motor Driver for VCR Capstan Motors Overview The LB1980H is a 3-phase brushless motor driver that is particularly appropriate for VCR capstan motor drivers. Functions •
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LB1980H
EN5974A
LB1980H
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0231A LB1980JH Monolithic Digital IC 3-Phase Brushless Motor Driver ht t p://onse m i.c om Overview The LB1980JH is a 3-phase brushless motor driver that is particularly appropriate for automotive. Functions • 3-phase full-wave drive
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ENA0231A
LB1980JH
LB1980JH
A0231-7/7
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN5974B LB1980H Monolithic Digital IC For VCR Capstan Motors ht t p://onse m i.c om 3-Phase Brushless Motor Driver Overview The LB1980JH is a 3-phase brushless motor driver that is particularly appropriate for VCR capstan motor drivers. Functions
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EN5974B
LB1980H
LB1980JH
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HSOP28H
Abstract: ILB01757 LB1980H rf based home appliances control lb1980
Text: Ordering number : EN5974B Monolithic Digital IC LB1980H For VCR Capstan Motors 3-Phase Brushless Motor Driver Overview The LB1980JH is a 3-phase brushless motor driver that is particularly appropriate for VCR capstan motor drivers. Functions • 3-phase full-wave drive
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EN5974B
LB1980H
LB1980JH
HSOP28H
ILB01757
LB1980H
rf based home appliances control
lb1980
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transistor 13007
Abstract: 13007 TRANSISTOR transistor E 13007 D 13007 K D 13007 K transistor 13006 TRANSISTOR j 13007 TRANSISTOR 13007 transistor m 13007 ballast 13007 TRANSISTOR
Text: TELEFUNKEN ELECTRONIC 17E D • ô'îSOO'îb D D D % 4 3 T ■ ALÛG TE 13006 * TE 13007 9electronic Cr««ifv«l«chno<ogws T- 33-13 Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique
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15A3DIN
transistor 13007
13007 TRANSISTOR
transistor E 13007
D 13007 K
D 13007 K transistor
13006 TRANSISTOR
j 13007 TRANSISTOR
13007
transistor m 13007
ballast 13007 TRANSISTOR
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D 13007 K
Abstract: T 13007 13007 j 13007 E 13007 0 13007 applications E 13007 13007 TRANSISTOR F 13007 m 13007
Text: TELEFUNKEN ELECTRONIC 17E D • ô'îSOO'îb D D D % 4 3 T ■ ALÛG TE 13006 * TE 13007 9electronic Cr««ifv«l«chno<ogws T - 33-13 Silicon NPN Power Transistors A p p lications: Sw itching m ode power supply, electronic ballast Features: • In multi diffusion technique
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000TtM3
D 13007 K
T 13007
13007
j 13007
E 13007 0
13007 applications
E 13007
13007 TRANSISTOR
F 13007
m 13007
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MJE13007
Abstract: MJE-13007 13006 TRANSISTOR mje13007 TRANSISTOR MJE13006 transistor 13006 MJE13007Q
Text: [ [ ^^53131 Q Q n i 3 1 D EV ELO P M EN T DATA a MJE13006 MJE13007 T his data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D T-33-I3 SILICO N DIFFUSED POWER TRAN SISTO R High-voltage, high-speed glass-passivated npn power transistor in a T 0 -2 2 0 envelope, intended for use
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bfa53Â
MJE13006
MJE13007
r-33-13
T0-220
bbS3T31
T-33-13
MJE13007
MJE-13007
13006 TRANSISTOR
mje13007 TRANSISTOR
transistor 13006
MJE13007Q
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BUV93
Abstract: TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003
Text: TELEFUNKEN ELECTRONIC filC D WM fi^SOCHb ODDSb43 1 • ALG6 POWER CONVERSION TRANSISTORS TELEFUNKEN electronic designs its high voltage power transistors for efficient operation in the full range of switching power supply, and switching amplifier topologies associated
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OOOSb43
-Wt--214-
BUV93
TU F 13003
BUV95
to-220 weight
X 13003
13002 TO-92
13003 TO-92
13007
TE13002
13003
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BD53A
Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623
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OT-23
KSC2223
KSC2715
KSC1623
KSC2715
KSC1674
BD53A
KSA733
KSC1330
KSC945
BD139
BD433 TO92
KSE 13007 L
ss8050 sot-23
KSE13009F
KSP10
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BUD48
Abstract: BUD48DI BUD 48 BUX23 BUV41 BUV40 BUW38 BUW52 bux348 TR MJE 350
Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL M0 glJ3 ILdOT©[ l(SS POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)
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D44Q1
D44Q3
D44Q5
BUV27
BUD48
BUD48DI
BUD 48
BUX23
BUV41
BUV40
BUW38
BUW52
bux348
TR MJE 350
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ksd 250v 10a
Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733
Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package Application SOT-23 TO-92 FM RM AMP M ix Conv Local O se IF KSC 2223 KSC 2223 KSC 2223 KSC 2715 KSC 1674 KSC 1674 KSC1674/KSC1675 KSC838/KSC1676 AM RF Conv O se KSC1623
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OT-23
KSC1623
812/KSC
SA812/KSC
KSA812/KSC1623
KSC1674/KSC1675
KSC838/KSC1676
KSC945/KSC815
ksd 250v 10a
B0X34C
ksd 202
ksa 3.3
KSC1330
IR 733
sa992
uhf fm 1845 IF
508AF
KSA733
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ksd 250v 10a
Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
Text: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715
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OT-23
KSC2223
KSC2715
KSC1674
KSC1674/
KSC167Î
KSC838/KSC167
ksd 250v 10a
ksd 202
ksd 180
13003 bd
ksd 250v
ksd 75
bow 94c
bdx 44b
ksd 250V 5A
d5072
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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2SC102 transistor
Abstract: transistor 2Sc102 2SC102 1763-0625 MM4647 usaf521es071m 10MSA 2SC519 2SC520 TK30557
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
USAF520ES070M
2N1508
50M5A
13On0
32On0
600di
2N1509
2SC102 transistor
transistor 2Sc102
2SC102
1763-0625
MM4647
usaf521es071m
10MSA
2SC519
2SC520
TK30557
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