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    13000 NPN TRANSISTOR Search Results

    13000 NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    13000 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T108

    Abstract: SMT6 T108 T246 sMT6 T100 T106 T110 T116 T146 T148
    Text: Transistors Packaging Packaging FSurface-mount type Package Code packaging specification direction Basic ordering unit TL Embossed tape Pin 1 is nearest to the sprocket hole. 13000 pcs TBL Embossed tape Pin 1 is nearest to the sprocket hole. 15000 pcs T106


    Original     		PDF

    mje 3007

    Abstract: No abstract text available
    Text: Ordering number : ENA0389A MCH4009 RF Transistor 3.5V, 40mA, fT=25GHz, NPN Single MCPH4 http://onsemi.com Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V) Low operating voltage High gain : |S21e|2=17dB typ (f=2GHz)


    Original     		PDF ENA0389A MCH4009 25GHz, 25GHz A0389-15/15 mje 3007

    transistor bf 760

    Abstract: MCH4008 945 npn
    Text: MCH4008 Ordering number : ENN8395 NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .


    Original     		PDF MCH4008 ENN8395 20GHz S21e2 transistor bf 760 MCH4008 945 npn

    MCH4008

    Abstract: TB 2920
    Text: MCH4008 Ordering number : ENN8395 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.


    Original     		PDF MCH4008 ENN8395 20GHz S21e2 MCH4008 TB 2920

    sanyo eg 8500

    Abstract: transistor 9747 MCH4009
    Text: MCH4009 Ordering number : ENA0389 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.


    Original     		PDF MCH4009 ENA0389 25GHz A0389-13/13 sanyo eg 8500 transistor 9747 MCH4009

    sanyo eg 8500

    Abstract: sanyo 14500 82306 MCH4009 MJE 13500 marking GG
    Text: MCH4009 Ordering number : ENA0389 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.


    Original     		PDF MCH4009 ENA0389 25GHz S21e2 A0389-13/13 sanyo eg 8500 sanyo 14500 82306 MCH4009 MJE 13500 marking GG

    Untitled

    Abstract: No abstract text available
    Text: MCH4009 Ordering number : ENA0389 NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .


    Original     		PDF MCH4009 ENA0389 25GHz A0389-13/13

    Untitled

    Abstract: No abstract text available
    Text: MCH4009 Ordering number : ENA0389A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V)


    Original     		PDF MCH4009 ENA0389A 25GHz A038915/15

    mje 3007

    Abstract: 264 bf 6032 TB 1226 EN ENA0389A mch4009 MJE 13500
    Text: MCH4009 Ordering number : ENA0389A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V)


    Original     		PDF ENA0389A MCH4009 25GHz A038915/15 mje 3007 264 bf 6032 TB 1226 EN ENA0389A mch4009 MJE 13500

    C10535E

    Abstract: NE52418 NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN
    Text: DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52418 L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER NPN GaAs HBT DESCRIPTION The NE52418 is an NPN GaAs HBT Heterojunction Bipolar Transistor developed for L to S band mobile communication equipment. FEATURES


    Original     		PDF NE52418 NE52418 OT-343 NE52418-T1 C10535E NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN

    CMOS Process Family

    Abstract: P-MOSFET transistor P-MOSFET process of mosfet micron resistor
    Text: 2 Micron CMOS Process Family  June 1995 Process Parameters Features • Double Poly / Double Metal • 4 µm Poly and Metal I Pitch • 320 ps Delay per stage Ring Osc. • 5.5 Volts Maximum Operating Voltage • 2.7~3.6 Volts Low Voltage Option • Shrinkable to Mitel 1.5µm Process


    Original     		PDF

    CMOS Process Family

    Abstract: No abstract text available
    Text: 2 Micron CMOS Process Family Features • Double Poly / Double Metal • 4 µm Poly and Metal 1 Pitch • 320 ps Delay per stage Ring Osc. Process parameters Process Parameters • 5.5 Volts Maximum Operating Voltage 2µm • 2.7~3.6 Volts Low Voltage Option


    Original     		PDF 150mm CMOS Process Family

    micron resistor

    Abstract: CMOS Process Family
    Text: 2 Micron CMOS Process Family  February 1996 Features • • • • • • • • • Process Parameters Double Poly / Double Metal 4 µm Poly and Metal I Pitch 320 ps Delay per stage Ring Osc. 5.5 Volts Maximum Operating Voltage 2.7~3.6 Volts Low Voltage Option


    Original     		PDF

    smd code marking NEC

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
    Text: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part


    Original     		PDF G18756EU3V0SG00 smd code marking NEC TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP

    Untitled

    Abstract: No abstract text available
    Text: 2 Micron CMOS Process Family Features • Double Poly / Double Metal • 4 µm Poly and Metal 1 Pitch • 320 ps Delay per stage Ring Osc. Process parameters Process Parameters • 5.5 Volts Maximum Operating Voltage 2µm • 2.7~3.6 Volts Low Voltage Option


    Original     		PDF 150mm

    CMOS Process Family

    Abstract: P-MOSFET mosfet 4800
    Text: 2 Micron CMOS Process Family Features • Double Poly / Double Metal • 4 µm Poly and Metal 1 Pitch • 320 ps Delay per stage Ring Osc. Process parameters Process Parameters • 5.5 Volts Maximum Operating Voltage 2µm • 2.7~3.6 Volts Low Voltage Option


    Original     		PDF 150mm CMOS Process Family P-MOSFET mosfet 4800

    BFQ67W

    Abstract: BFQ67 BFQ67R 682 MARKING SOT-23 SOT-23 marking 717 358 MARKING SOT23-3
    Text: BFQ67 / BFQ67R / BFQ67W Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • • Small feedback capacitance Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFQ67 BFQ67R BFQ67W OT-23 2002/95/EC 2002/96/EC OT-323 BFQ67 OT-23 BFQ67W 682 MARKING SOT-23 SOT-23 marking 717 358 MARKING SOT23-3

    transistor marking WV2

    Abstract: 682 SOT23 MARKING BFQ67W
    Text: BFQ67 / BFQ67R / BFQ67W Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • • Small feedback capacitance Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFQ67 BFQ67R BFQ67W 2002/95/EC 2002/96/EC OT-23 OT-323 OT-23 transistor marking WV2 682 SOT23 MARKING BFQ67W

    transistor marking WV2

    Abstract: BFQ6 j-05 BFQ67W
    Text: BFQ67 / BFQ67R / BFQ67W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • Small feedback capacitance • Low noise figure • High transition frequency 2 3 1 SOT-23 Applications Low noise small signal amplifiers up to 2 GHz. This


    Original     		PDF BFQ67 BFQ67R BFQ67W OT-23 OT-323 OT-23 transistor marking WV2 BFQ6 j-05 BFQ67W

    358 MARKING SOT23-3

    Abstract: k 0538 transistor marking WV2 BFQ67W
    Text: Not for new design, this product will be obsoleted soon BFQ67 / BFQ67R / BFQ67W Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT23 Features • • • • • Small feedback capacitance Low noise figure e3 High transition frequency Lead Pb -free component


    Original     		PDF BFQ67 BFQ67R BFQ67W 2002/95/EC 2002/96/EC OT323 OT-23 358 MARKING SOT23-3 k 0538 transistor marking WV2 BFQ67W

    inverter welding machine circuit board

    Abstract: CPF00 JVOP-160 yaskawa inverter contactors yaskawa A70P900 yaskawa dynamic braking unit diagram MC 1200 Motor Control Board H3 OMRON 2.5 kva inverter history references
    Text: Spain Tel: +34 913 777 900 www.omron.es Belgium Tel: +32 0 2 466 24 80 www.omron.be Germany Tel: +49 (0) 2173 680 00 www.omron.de Norway Tel: +47 (0) 22 65 75 00 www.omron.no Sweden Tel: +46 (0) 8 632 35 00 www.omron.se Czech Republic Tel: +420 234 602 602


    Original     		PDF E2-01) EN-24 inverter welding machine circuit board CPF00 JVOP-160 yaskawa inverter contactors yaskawa A70P900 yaskawa dynamic braking unit diagram MC 1200 Motor Control Board H3 OMRON 2.5 kva inverter history references

    NE64400

    Abstract: 11744 502
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION FEATURES The NE644 is a series of NPN silicon transistors designed foruse in low-noise, small signal amplifiers up to 6 GHz. The series features excellent power gain with very low noise figures. NE644 transistors are available in chip form or in


    OCR Scan     		PDF NE64400 NE64408 NE644 NE64400, NE64400 IS12S2 11744 502

    al 232 nec

    Abstract: NE64400 NE644 NE64408 S21E
    Text: N E C / C A L IF O R N I A SbE ]> • bM2741M 0QD2417 2MD H N E C C -r r -3 l NPN SILICON HIGH FREQUENCY TRANSISTOR 7 NE64400 NE64408 FEATURES DESCRIPTION AND APPLICATIONS • LO W N O IS E F IG U R E : 2.7 d B at 4 GHz The NE644 is the latest in a series of NPN silicon transistors


    OCR Scan     		PDF b427414 NE64400 NE64408 NE644 gain60 al 232 nec NE64408 S21E

    MP2143A

    Abstract: MP2144 XC141 MT63a MP2143 MP2144A MD16 2n2072 2sb235 BL1300
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. 1532t MP1532At MP1533t MP1534At MP2143A MP2144 XC141 MT63a MP2143 MP2144A MD16 2n2072 2sb235 BL1300