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    13000 BR TRANSISTOR Search Results

    13000 BR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    13000 BR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13000 BR transistor

    Abstract: 13000 transistor TRANSISTOR 13000 J308 J309 SMPJ308 SMPJ309
    Text: Databook.fxp 1/13/99 2:09 PM Page B-61 B-61 01/99 J308, J309 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Mixers ¥ Oscillators ¥ VHF/UHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original     		PDF 226AA SMPJ308, SMPJ309 13000 BR transistor 13000 transistor TRANSISTOR 13000 J308 J309 SMPJ308 SMPJ309

    mje 3007

    Abstract: No abstract text available
    Text: Ordering number : ENA0389A MCH4009 RF Transistor 3.5V, 40mA, fT=25GHz, NPN Single MCPH4 http://onsemi.com Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V) Low operating voltage High gain : |S21e|2=17dB typ (f=2GHz)


    Original     		PDF ENA0389A MCH4009 25GHz, 25GHz A0389-15/15 mje 3007

    transistor bf 760

    Abstract: MCH4008 945 npn
    Text: MCH4008 Ordering number : ENN8395 NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .


    Original     		PDF MCH4008 ENN8395 20GHz S21e2 transistor bf 760 MCH4008 945 npn

    MCH4008

    Abstract: TB 2920
    Text: MCH4008 Ordering number : ENN8395 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.


    Original     		PDF MCH4008 ENN8395 20GHz S21e2 MCH4008 TB 2920

    sanyo eg 8500

    Abstract: transistor 9747 MCH4009
    Text: MCH4009 Ordering number : ENA0389 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.


    Original     		PDF MCH4009 ENA0389 25GHz A0389-13/13 sanyo eg 8500 transistor 9747 MCH4009

    sanyo eg 8500

    Abstract: sanyo 14500 82306 MCH4009 MJE 13500 marking GG
    Text: MCH4009 Ordering number : ENA0389 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.


    Original     		PDF MCH4009 ENA0389 25GHz S21e2 A0389-13/13 sanyo eg 8500 sanyo 14500 82306 MCH4009 MJE 13500 marking GG

    Untitled

    Abstract: No abstract text available
    Text: MCH4009 Ordering number : ENA0389 NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .


    Original     		PDF MCH4009 ENA0389 25GHz A0389-13/13

    Untitled

    Abstract: No abstract text available
    Text: MCH4009 Ordering number : ENA0389A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V)


    Original     		PDF MCH4009 ENA0389A 25GHz A038915/15

    mje 3007

    Abstract: 264 bf 6032 TB 1226 EN ENA0389A mch4009 MJE 13500
    Text: MCH4009 Ordering number : ENA0389A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V)


    Original     		PDF ENA0389A MCH4009 25GHz A038915/15 mje 3007 264 bf 6032 TB 1226 EN ENA0389A mch4009 MJE 13500

    2n5485 equivalent transistor

    Abstract: transconductance 2N5485 2N4416 equivalent 2N5485 interfet 2N4416 2N4416A 2N5484 2N5486 SMP4416
    Text: Databook.fxp 1/14/99 11:30 AM Page B-14 B-14 01/99 2N4416, 2N4416A N-Channel Silicon Junction Field-Effect Transistor ¥ Mixers ¥ VHF Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Dissipation


    Original     		PDF 2N4416, 2N4416A 2N4416 O-226AB O-92/18) 2n5485 equivalent transistor transconductance 2N5485 2N4416 equivalent 2N5485 interfet 2N4416 2N4416A 2N5484 2N5486 SMP4416

    022N04L

    Abstract: SMD diode D95 sth25
    Text: Type IPB022N04L G !"#$%!& 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 2.2 mW ID 90 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level


    Original     		PDF IPB022N04L IEC61249-2-21 PG-TO263-3 022N04L 022N04L SMD diode D95 sth25

    Untitled

    Abstract: No abstract text available
    Text: Type IPB022N04L G  3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 2.2 mW ID 90 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level


    Original     		PDF IPB022N04L IEC61249-2-21 PG-TO263-3 022N04L

    035N06L

    Abstract: IPD035N06L3 JESD22 IPD035N06L3 G IPD035N06 035N06
    Text: IPD035N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 3.5 mΩ ID 90 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPD035N06L3 PG-TO-252-3 035N06L 035N06L JESD22 IPD035N06L3 G IPD035N06 035N06

    032N06n

    Abstract: IPA032N06N3 032N06 IPA032N06N3G JESD22 PG-TO220-3-31 ipa032n
    Text: IPA032N06N3 G Type OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 3.2 mΩ ID 84 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPA032N06N3 PG-TO220-3-31 032N06N 032N06n 032N06 IPA032N06N3G JESD22 PG-TO220-3-31 ipa032n

    4N06

    Abstract: IPD90N06S4L-03 PG-TO252-3-11 f90a 4N06L03 C2804
    Text: IPD90N06S4L-03 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 3.5 mΩ ID 90 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD90N06S4L-03 PG-TO252-3-11 4N06L03 4N06 IPD90N06S4L-03 PG-TO252-3-11 f90a 4N06L03 C2804

    STE40NA60

    Abstract: No abstract text available
    Text: STE40NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STE40NA60 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 0.135 Ω 40 A TYPICAL RDS(on) = 0.12 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER


    Original     		PDF STE40NA60 STE40NA60

    031N06L

    Abstract: IPD031N06L3 JESD22 IPD031N06L3 G
    Text: IPD031N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 3.1 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPD031N06L3 PG-TO-252-3 031N06L 031N06L JESD22 IPD031N06L3 G

    E40NA60

    Abstract: schematic diagram UPS STE40NA60 Ultrasonic welding circuit diagram
    Text: STE40NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST E40NA60 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 0.135 Ω 40 A TYPICAL RDS(on) = 0.12 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STE40NA60 E40NA60 E40NA60 schematic diagram UPS STE40NA60 Ultrasonic welding circuit diagram

    022N04L

    Abstract: IEC61249-2-21 JESD22 IPB022N04L SMD diode D95
    Text: Type IPB022N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 2.2 mΩ ID 90 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level


    Original     		PDF IPB022N04L IEC61249-2-21 PG-TO263-3 022N04L 022N04L IEC61249-2-21 JESD22 SMD diode D95

    032N06n

    Abstract: 029N06N IPI032N06N3 G IEC61249-2-21 IPP032N06N3 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06
    Text: Type IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 2.9 mΩ • Optimized technology for DC/DC converters ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB029N06N3 IPI032N06N3 IPP032N06N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 032N06n 029N06N IPI032N06N3 G IEC61249-2-21 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06

    SMD diode D95

    Abstract: JESD22 8v32
    Text: Type IPB022N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 2.2 mΩ ID 90 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level


    Original     		PDF IPB022N04L PG-TO263-3 022N04L SMD diode D95 JESD22 8v32

    032N06n

    Abstract: 029N06N 032N06 032N0 IPP032N06N3 IPI032N06N3 G JESD22 PG-TO220-3
    Text: IPB029N06N3 G Type IPI032N06N3 G IPP032N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.9 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB029N06N3 IPI032N06N3 IPP032N06N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 029N06N 032N06n 029N06N 032N06 032N0 IPI032N06N3 G JESD22 PG-TO220-3

    Untitled

    Abstract: No abstract text available
    Text: B 61 9-9 7 1308, J309 N -C H A N N E L SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXERS • OSCILLATOR • VHF/UHF AMPLIFIERS Absolute maximum ratings at Ta = 25‘ C Reverse Gate Source & Reverse Gate Drain Voltage 360 mW 3 .2 7 m W /°C Power Derating


    OCR Scan     		PDF T0-226AA 462fc

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STE40NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYP E S TE40N A60 . . . . . . . . . V dss R dS(oii) Id 600 V < 0.135 Q. 40 A TYPICAL RDs(on) =0.12 £2 HIGH CURRENT POWER MODULE


    OCR Scan     		PDF STE40NA60 TE40N