E2000
Abstract: laser 850 nm LED 1310 nm fiber coupled LED Laser International 850 nm LED "Photo Diode" Laser Diode LD Catalog HOD2236-111/BBA
Text: Infrared Products Single Fiber Duplex Modules FEATURES • Full duplex over single fiber • DC to 160 MHz link bandwidth • Link budgets of 2 km [1.24 miles] or greater • 40 dB isolation • Low profile ST housing • Other options available • VCSEL is Class 1 eye safe
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HOD2236-111/BBA
HOD4090-111/BBA
006469-1-E
E2000
laser 850 nm
LED 1310 nm fiber coupled
LED Laser International
850 nm LED
"Photo Diode"
Laser Diode LD Catalog
HOD2236-111/BBA
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Untitled
Abstract: No abstract text available
Text: Laser Diode Drivers MODEL Power Supply Analog NUMBER Requirements Bandwidth +Vcc +Icc MHz Volts + mA Max Trigger Rate for specs MHz Max Trigger Rate MHz Prop Delay Rising nsec Rise & Fall Time nsec Iout DNL mA Bits max 20 100 40 200 1.6 2.9>5 1.7 2 200 120
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AD9660
AD9661A
ADN2840
Page-160
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2 Wavelength Laser Diode
Abstract: laser DFB 1300 rise
Text: C-13XX-DFB-RX-SXXXX 1300 nm Features ! ! ! ! ! ! Un-cooled laser diode with MQW structure High temperature operation without active cooling Hermetically sealed active component Built-in InGaAs monitor photodiode Complies with Bellcore TA-NWT-000983 Single frequency operation with high
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C-13XX-DFB-RX-SXXXX
TA-NWT-000983
C-13XX-DFB-PX-SXXXX/XXX-X
OM-D-SP-0022-V2
NumberC-13XX-DFB-PX-SXXXX/XXX-X
2 Wavelength Laser Diode
laser DFB 1300 rise
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850 nm LED
Abstract: LED 1310 nm fiber coupled 1300 nm LED Honeywell DBM 01 E2000 HOD1121-411EBA laser 850 nm Laser Diode LD Catalog
Text: Infrared Products Single Fiber Duplex Modules FEATURES • Full multiplex over single fiber • DC to 160 MHz link bandwidth • Link budgets of 2 km [1.24 miles] or greater • 40 dB isolation • SC connector • Other options available • VCSEL is Class 1 eye safe
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HOD2294-111/EBA
HOD1121-411/EBA
006470-1-E
850 nm LED
LED 1310 nm fiber coupled
1300 nm LED
Honeywell DBM 01
E2000
HOD1121-411EBA
laser 850 nm
Laser Diode LD Catalog
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2 Wavelength Laser Diode
Abstract: 1300 laser diode rise time laser DFB 1300 rise 90 ps
Text: C-13XX-DFB2.5-RD-SXXXX 1300 nm C-13XX-DFB2.5-PD-SXXXX/XXX-X Features ! ! ! ! ! ! Un-cooled laser diode with MQW structure High temperature operation without active cooling Hermetically sealed active component Built-in InGaAs monitor photodiode Complies with Bellcore
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C-13XX-DFB2
TA-NWT-000983
OM-D-SP-0009-V2
NumberC-13XX-DFB2
2 Wavelength Laser Diode
1300 laser diode rise time
laser DFB 1300 rise 90 ps
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diode 1314
Abstract: laser diode 1310 nm fiber coupled The Diode with Package Outlines 1300 laser diode rise time 300 mw IR Laser Diode
Text: STL 51704X STL 51705X 1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power Half Duplex Operation • • • • Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and
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51704X
51705X
51704G
Q62702-Pxxxx
1704A
51705G
1705A
diode 1314
laser diode 1310 nm fiber coupled
The Diode with Package Outlines
1300 laser diode rise time
300 mw IR Laser Diode
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Untitled
Abstract: No abstract text available
Text: SBH52454x-FSAN HIGH POWER BIDI Optical Standard Module for ATM-PON ONU Applications 1300 nm Emitting, 1550 nm Receiving Dimensions in mm • Ternary Photodiode at rear mirror for monitoring and control of radiant power • Low noise / high bandwidth PIN diode
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SBH52454x-FSAN
D-13623,
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Untitled
Abstract: No abstract text available
Text: SBH52414x-FSAN HIGH POWER BIDI Optical Standard Module for ATM-PON ONU Applications 1300 nm Emitting, 1550 nm Receiving Dimensions in mm 1 1mm above TO-bottom connector type • Ternary Photodiode at rear mirror for monitoring and control of radiant power
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SBH52414x-FSAN
D-13623,
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VDSL splitter
Abstract: No abstract text available
Text: SBH52444x-FSAN HIGH POWER BIDI Optical Standard Module for ATM-PON ONU Applications 1300 nm Emitting, 1550 nm Receiving Dimensions in mm • Ternary Photodiode at rear mirror for monitoring and control of radiant power • Low noise / high bandwidth PIN diode
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SBH52444x-FSAN
D-13623,
VDSL splitter
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Untitled
Abstract: No abstract text available
Text: SBH52444x-FSAN HIGH POWER BIDI Optical Standard Module for ATM-PON ONU Applications 1300 nm Emitting, 1550 nm Receiving Dimensions in mm • Ternary Photodiode at rear mirror for monitoring and control of radiant power • Low noise / high bandwidth PIN diode
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SBH52444x-FSAN
D-13623,
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Untitled
Abstract: No abstract text available
Text: SBH52454x-FSAN HIGH POWER BIDI Optical Standard Module for ATM-PON ONU Applications 1300 nm Emitting, 1550 nm Receiving Dimensions in mm • Ternary Photodiode at rear mirror for monitoring and control of radiant power • Low noise / high bandwidth PIN diode
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SBH52454x-FSAN
D-13623,
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Untitled
Abstract: No abstract text available
Text: SBH52414x-FSAN HIGH POWER BIDI Optical Standard Module for ATM-PON ONU Applications 1300 nm Emitting, 1550 nm Receiving Dimensions in mm 1 1mm above TO-bottom connector type • Ternary Photodiode at rear mirror for monitoring and control of radiant power
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SBH52414x-FSAN
D-13623,
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SBL51214G
Abstract: SBL51214N SBL51214Z SBL52214G SBL52214N SBL52214Z "beam splitter"
Text: SBL52214x LOW POWER BIDI Optical Standard Module 1300 nm Emitting, 1300 nm Receiving Dimensions in mm 1 1mm above TO-bottom connector type Absolute Maximum Ratings Module Operating temperature range at case, TC . –40°C to 85°C Storage temperature range, Tstg . –40°C to 85°C
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SBL52214x
D-13623,
SBL51214G
SBL51214N
SBL51214Z
SBL52214G
SBL52214N
SBL52214Z
"beam splitter"
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photodiode 1300nm sensitivity single mode
Abstract: "beam splitter"
Text: SBL52214x LOW POWER BIDI Optical Standard Module 1300 nm Emitting, 1300 nm Receiving Dimensions in mm 1 1mm above TO-bottom connector type Absolute Maximum Ratings Module Operating temperature range at case, TC . –40°C to 85°C Storage temperature range, Tstg . –40°C to 85°C
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SBL52214x
D-13623,
photodiode 1300nm sensitivity single mode
"beam splitter"
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SBM51214G
Abstract: SBM51214N SBM51214Z SBM52214G SBM52214N SBM52214Z
Text: SBM52214x MEDIUM POWER BIDI Optical Standard Module 1300 nm Emitting, 1300 nm Receiving Dimensions in mm 1 1mm above TO-bottom connector type Absolute Maximum Ratings Module Operating temperature range at case, TC . –40°C to 85°C Storage temperature range, Tstg . –40°C to 85°C
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SBM52214x
D-13623,
SBM51214G
SBM51214N
SBM51214Z
SBM52214G
SBM52214N
SBM52214Z
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LDT-362
Abstract: No abstract text available
Text: LASER DIODE INC IE SBÖSTÖS 00DDM34 S I LAD LDT-362, LDT-362E LDT-60005, LDT-60005E LDT-60001 " T-4T-07 LASER DIODE IN C . 1300nm EDGE EMITTING LED SERIES FEATURES ►High Peak Power ►Fast Rise Time ►Single and Multi mode Fiber Optic Pigtail Options ► Hermetic and Non-Hermetic Packages
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00DDM34
LDT-362,
LDT-362E
LDT-60005,
LDT-60005E
LDT-60001
T-4T-07
1300nm
LDT-362
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IRE-387-002
Abstract: IRE387-002
Text: J „ p i a e T-4W 3 12E D I 5302^05 0DDDM3fl 5 | LASER DIODE INC : LASER DIODE INC. IRE-387-002 IRE-387-003 IRE-491 1300nm SURFACE EMITTING LED FEATURES ► Reliable Surface Emitting Construction ► High Radiance ► Exceptional Linearity ► Fast Rise and Fall Times
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IRE-387-002
IRE-387-003
IRE-491
1300nm
IRE387-002
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LDT-362
Abstract: 12AE6
Text: LDT-362, LDT-362E LDT-60005, LDT-60005E LDT-60001 LASER DIODE IN C - 1300nm EDGE EMITTING LED SERIES FEATURES ►High Peak Power ►Fast Rise Time ►Single and Multi mode Fiber Optic Pigtail Options ►Hermetic and Non-Hermetic Packages ►Thermo-electric Cooler Option
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LDT-362,
LDT-362E
LDT-60005,
LDT-60005E
LDT-60001
1300nm
LDT-362
12AE6
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1300 laser diode rise time
Abstract: Indium Gallium Arsenide Phosphide lasers 502CQF indium gallium arsenide phosphide OC45K laser 477 Semiconductor Laser International data by 476 diode 1300 nm Laser 40 mW diode 476 k
Text: N AMER PHILIPS/DISCRETE a?D bbSBT31 00CH733 0 D r D EV ELO PM EN T DATA This data shget contains advance information and specifications are subject to change w ithout notice. T-41-07 502CQF BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH FIBRE PIGTAIL The 502C Q F is an InGaAsP buried heterojunction semiconductor laser diode. The device is designed
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502CQF
OT-184
1300 laser diode rise time
Indium Gallium Arsenide Phosphide lasers
indium gallium arsenide phosphide
OC45K
laser 477
Semiconductor Laser International
data by 476 diode
1300 nm Laser 40 mW
diode 476 k
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thermistor 7 rom
Abstract: No abstract text available
Text: LA S E R DIODE IN C la E D I SBñaTñS 1 GDD0411 • =1 | ■ T - W - o s r _ LCW -1300 SERIES LASER DIODE, INC. 4300nm Multimode Pigtailed Lasers FEATURES ► InGaAsP Buried Crescent Low Threshold Current Hermetically Sealed Package P Extended Operating Temperature Range
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GDD0411
4300nm
100yum
50mWe
thermistor 7 rom
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503CQF
Abstract: Indium Gallium Arsenide Phosphide lasers 1300 laser diode rise time laser diode philips
Text: N AMER PHILIPS /DISCRETE Û7D D b t i S 3 ‘ì 3 1 D00T737 T-4Î-07 DEVELO PM EN T DATA Th is data sheet contains advance information end specifications are subject to change w ithout notice. fl 503CQF BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH SINGLE MODE FIBRE PIGTAIL
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D00T737
503CQF
503CQF
Indium Gallium Arsenide Phosphide lasers
1300 laser diode rise time
laser diode philips
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE fl7D D D E V ELO PM EN T DATA bbS3T31 DDOTTSS 0 • ' T^41-07 This data sheat contains advance Information and specifications are subject to change without notice. 502CQF BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH FIBRE PIGTAIL
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bbS3T31
502CQF
T-184
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diode 1314
Abstract: 1300 laser diode rise time
Text: SIEMENS 1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power Half Duplex Operation STL 51704X STL 51705X • • • • Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s
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OCR Scan
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PDF
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51704X
51705X
51704G
1704A
STL51705G
1705A
Q62702-PXXXX
Q62702-PXXXX
diode 1314
1300 laser diode rise time
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Power DIODE A30
Abstract: a30 DIODE DIODE A30
Text: bOE D • S235bOS 004b5bb TT7 H S I E 6 SIEMENS SFH 4448 TRANSCEIVER OPTICAL MODULE SIEMENS AKTIEN6ESELLSCHAF Package Dimensions in mm Emitter @1 HI Detector a FEATURES Maximum Ratings • Bidirectional Module with Integrated Beam Splitter Output power ratings refer to the SM fiber output. The operating
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S235bOS
004b5bb
Power DIODE A30
a30 DIODE
DIODE A30
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