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    12V PNP TRANSISTOR Search Results

    12V PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    12V PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTC6717MC ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A DESCRIPTION


    Original     		PDF ZXTC6717MC ZXTDA1M832

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS717MC ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A


    Original     		PDF ZXTPS717MC ZX3CD1S1M832

    ZXTN07012EFF

    Abstract: ZXTP07012EFF ZXTP07012EFFTA
    Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications


    Original     		PDF ZXTP07012EFF OT23F, -75mV ZXTN07012EFF OT23F OT23F ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications


    Original     		PDF ZXTP07012EFF OT23F, -75mV ZXTN07012EFF OT23F OT23F D-81541

    TS16949

    Abstract: ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150
    Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications


    Original     		PDF ZXTP07012EFF OT23F, -75mV ZXTN07012EFF OT23F OT23F D-81541 TS16949 ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150

    Untitled

    Abstract: No abstract text available
    Text: 2SB1732 / 2SB1709 Datasheet PNP -1.5A -12V Middle Power Transistor lOutline Parameter Value TUMT3 -12V -1.5A VCEO IC TSMT3 Collector Collector Base Base Emitter Emitter 2SB1709 SC-96 2SB1732 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SD2702, 2SD2674


    Original     		PDF 2SB1732 2SB1709 SC-96) 2SB1732 2SD2702, 2SD2674 -500mA/ -25mA)

    marking DA1

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC6717MC ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A


    Original     		PDF ZXTC6717MC ZXTDA1M832 marking DA1

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTPS717MC ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A


    Original     		PDF ZXTPS717MC ZX3CD1S1M832

    DFN3020B-8

    Abstract: diodes transistor marking k2 dual
    Text: A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage -140mV max @ -1A


    Original     		PDF ZXTPS717MC -140mV 500mV DFN3020B-8 DS31936 DFN3020B-8 diodes transistor marking k2 dual

    4420 Transistor

    Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
    Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


    Original     		PDF ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage -140mV max @ -1A


    Original     		PDF ZXTPS717MC -140mV 500mV DFN3020B-8 DS31936

    4420 Transistor

    Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
    Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


    Original     		PDF ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23

    TS16949

    Abstract: ZXTN25012EZ ZXTP25012EZ ZXTP25012EZTA
    Text: ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC cont = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m⍀ PD = 2.4W Complementary part number ZXTN25012EZ Description C Packaged in the SOT89 outline this new low saturation 12V PNP


    Original     		PDF ZXTP25012EZ -70mV ZXTN25012EZ D-81541 TS16949 ZXTN25012EZ ZXTP25012EZ ZXTP25012EZTA

    marking 8A sot223

    Abstract: sot223 transistor pinout transistor pnp 12V 1A Continuous Current Peak FZT717 FZT717TA 12v pnp transistor zetex 320
    Text: FZT717 SOT223 PNP medium power transistor Summary BVCEO = -12V; IC = 3A Description Packaged in the SOT223 outline this low saturation 12V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.


    Original     		PDF FZT717 OT223 FZT717TA marking 8A sot223 sot223 transistor pinout transistor pnp 12V 1A Continuous Current Peak FZT717 FZT717TA 12v pnp transistor zetex 320

    DFN3020B-8

    Abstract: ZXTPS717MC DS3193
    Text: A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL Features Mechanical Data • • • • • • • • • • • • • • • PNP Transistor • VCEO = -12V • RSAT = 65mΩ


    Original     		PDF ZXTPS717MC 500mv -140mV DFN3020B-8 J-STD-020 DS31936 DFN3020B-8 ZXTPS717MC DS3193

    MLP832

    Abstract: ZX3CD1S1M832 ZX3CD1S1M832TA ZX3CD1S1M832TC 0001M10
    Text: ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual


    Original     		PDF ZX3CD1S1M832 500mV MLP832 ZX3CD1S1M832 ZX3CD1S1M832TA ZX3CD1S1M832TC 0001M10

    MLP832

    Abstract: ZX3CD1S1M832 ZX3CD1S1M832TA ZX3CD1S1M832TC
    Text: ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual


    Original     		PDF ZX3CD1S1M832 500mV MLP832 ZX3CD1S1M832 ZX3CD1S1M832TA ZX3CD1S1M832TC

    Untitled

    Abstract: No abstract text available
    Text: 2SA2030 / 2SA2018 / 2SA2119K Datasheet PNP -500mA -12V Low Frequency Amplifier Transistors lOutline Parameter Value VCEO IC -12V -500mA VMT3 EMT3 Collector Collector Base Base Emitter Emitter 2SA2030 SC-105AA lFeatures 1) A Collecotr current is large.General Purpose.


    Original     		PDF 2SA2030 2SA2018 2SA2119K -500mA -500mA 2SA2030 SC-105AA) 250mV -200mA, -10mA

    ZXT10P12DE6

    Abstract: ZXT10P12DE6TA ZXT10P12DE6TC Marking 717 DSA0037437
    Text: ZXT10P12DE6 SuperSOT 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		PDF ZXT10P12DE6 OT23-6 OT23-6 ZXT10P12DE6 ZXT10P12DE6TA ZXT10P12DE6TC Marking 717 DSA0037437

    P12D

    Abstract: P12D marking ZXT13P12DE6 ZXT13P12DE6TA ZXT13P12DE6TC marking p12d DSA0037465
    Text: ZXT13P12DE6 SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		PDF ZXT13P12DE6 OT23-6 OT23-6 P12D P12D marking ZXT13P12DE6 ZXT13P12DE6TA ZXT13P12DE6TC marking p12d DSA0037465

    T14P12DX

    Abstract: MO-187 ZXT14P12DX ZXT14P12DXTA ZXT14P12DXTC DSA003747
    Text: ZXT14P12DX SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 16m ; IC= -6A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		PDF ZXT14P12DX ZXT14P12DXTA T14P12DX MO-187 ZXT14P12DX ZXT14P12DXTA ZXT14P12DXTC DSA003747

    Untitled

    Abstract: No abstract text available
    Text: ZXT13P12DE6 SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 37m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		PDF ZXT13P12DE6 OT23-6 OT23-6

    MO-187

    Abstract: ZXT12P12DX ZXT12P12DXTA ZXT12P12DXTC t12p12dx DSA0037452
    Text: ZXT12P12DX SuperSOT4 DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 47m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		PDF ZXT12P12DX MO-187 ZXT12P12DX ZXT12P12DXTA ZXT12P12DXTC t12p12dx DSA0037452

    TS16949

    Abstract: ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA
    Text: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = 4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25012EFH -65mV ZXTN25012EFH D-81541 TS16949 ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA