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    12V INPUT 55V OUTPUT USING IRFZ44N CIRCUIT Search Results

    12V INPUT 55V OUTPUT USING IRFZ44N CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DCL541A01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    DCL541B01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: High / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    12V INPUT 55V OUTPUT USING IRFZ44N CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFz44n equivalent

    Abstract: k3432 IRFZ44N 12v input 55v output using irfz44n circuit
    Text: PD - 94836 IRFIZ44NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description


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    PDF IRFIZ44NPbF O-220 I840G IRFz44n equivalent k3432 IRFZ44N 12v input 55v output using irfz44n circuit

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    Abstract: No abstract text available
    Text: PD - 94836 IRFIZ44NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description


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    PDF IRFIZ44NPbF O-220 I840G

    IRFz44n equivalent

    Abstract: 12v input 55v output using irfz44n circuit IRFZ44N for irfz44n
    Text: PD - 94836 IRFIZ44NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description


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    PDF IRFIZ44NPbF O-220 I840G IRFz44n equivalent 12v input 55v output using irfz44n circuit IRFZ44N for irfz44n

    IRFIZ44N equivalent

    Abstract: IRF1010 IRFI840G IRFIZ44N IRFZ44N IRFz44n equivalent
    Text: Previous Datasheet Index Next Data Sheet PD 9.1403 IRFIZ44N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V


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    PDF IRFIZ44N IRFIZ44N equivalent IRF1010 IRFI840G IRFIZ44N IRFZ44N IRFz44n equivalent

    IRFz44n equivalent

    Abstract: datasheet of irfz44n IRF1010 IRFI840G IRFIZ44N IRFZ44N
    Text: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier


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    PDF 1403B IRFIZ44N O-220 IRFz44n equivalent datasheet of irfz44n IRF1010 IRFI840G IRFIZ44N IRFZ44N

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    Abstract: No abstract text available
    Text: PD - 9.1403B IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier


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    PDF 1403B IRFIZ44N O-220

    IRFz44n equivalent

    Abstract: IRF1010 IRFI840G IRFIZ44N IRFZ44N 12v input 55v output using irfz44n circuit IRFZ44 IRFIZ44N equivalent irfi840
    Text: PD 9.1403 IRFIZ44N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.024Ω G ID = 28A S Description


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    PDF IRFIZ44N O-220 IRFz44n equivalent IRF1010 IRFI840G IRFIZ44N IRFZ44N 12v input 55v output using irfz44n circuit IRFZ44 IRFIZ44N equivalent irfi840

    B1370

    Abstract: R B1370 IRFz44n equivalent MOSFET IRFZ44N for irfz44n IRF1010 MOSFET TO-220 IRFIZ44N
    Text: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier


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    PDF 1403B IRFIZ44N O-220 B1370 R B1370 IRFz44n equivalent MOSFET IRFZ44N for irfz44n IRF1010 MOSFET TO-220 IRFIZ44N

    IRFz44n equivalent

    Abstract: IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630
    Text: PD - 9.1403A IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier


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    PDF IRFIZ44N O-220 IRFz44n equivalent IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630

    AUIRFIZ44N

    Abstract: No abstract text available
    Text: AUTOMOTIVE GRADE AUIRFIZ44N Features l l l l l l l l l PD - 97767 HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS… Sink to Lead Creepage Distantce = 4.8mm 175°C Operating Temperature Fully Avalanche Rated


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    PDF AUIRFIZ44N AUIRFIZ44N

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    Abstract: No abstract text available
    Text: AUTOMOTIVE GRADE PD - 97767 AUIRFIZ44N Features l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS… Sink to Lead Creepage Distantce = 4.8mm 175°C Operating Temperature Fully Avalanche Rated


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    PDF AUIRFIZ44N

    IRFZ44N

    Abstract: IRFR1205 equivalent AN-994 IRFR1205 IRFU1205 surface mount IRFZ44N irfru1205
    Text: PD - 91318B IRFR/U1205 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G Description The D-PAK is designed for surface mounting using


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    PDF 91318B IRFR/U1205 IRFR1205) IRFU1205) IRFZ44N IRFR1205 equivalent AN-994 IRFR1205 IRFU1205 surface mount IRFZ44N irfru1205

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    Abstract: No abstract text available
    Text: IRFR/U1205 D -P A K T O -252 A A l l l l l I-P A K T O -25 1A A Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.


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    PDF IRFR/U1205 IRFR1205) IRFU1205) O-252AA

    Untitled

    Abstract: No abstract text available
    Text: PD - 91318B IRFR/U1205 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G Description The D-PAK is designed for surface mounting using


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    PDF 91318B IRFR/U1205 IRFR1205) IRFU1205)

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


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    PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter