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Catalog Datasheet	MFG & Type	PDF	Document Tags
dt 92 abb Abstract: 5SMX12L2510 Text: VRRM = IF = 2500 V 100 A Fast-Diode Die 5SLX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA1664-02 Feb. 05 • • • • Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol	Original	PDF	12L2510 5SYA1664-02 CH-5600 dt 92 abb 5SMX12L2510
Untitled Abstract: No abstract text available Text: VRRM = IF = 2500 V 100 A Fast-Diode Die 5SLX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA1664-02 July 04 • • • • Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol	Original	PDF	12L2510 5SYA1664-02 CH-5600
IGBT abb Abstract: 5SLX12L2510 a7050 V15C Text: VCE IC = = 2500 V 50 A IGBT-Die 5SMX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA 1622-03 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide	Original	PDF	12L2510 CH-5600 IGBT abb 5SLX12L2510 a7050 V15C
Untitled Abstract: No abstract text available Text: VCE IC = = 2500 V 50 A IGBT-Die 5SMX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA 1622-02 Feb 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide	Original	PDF	12L2510 specification12L2510 CH-5600
abb traction motor Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12 Text: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the	Original	PDF	CH-5600 1768/138a 29palms abb traction motor diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12