MJ86
Abstract: 57 A
Text: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values
|
Original
|
12H1280
CH-5600
MJ86
57 A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-02 Dez 12 • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values
|
Original
|
12H1280
CH-5600
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-03 04 14 • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values
|
Original
|
12H1280
CH-5600
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1280 PRELIMINARY Die size: 9.1 x 9.0 mm Doc. No. 5SYA1307-01 July 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide
|
Original
|
12H1280
5SYA1307-01
CH-5600
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1280 Die size: 9.1 x 9.0 mm Doc. No. 5SYA1307-03 04 14 • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications
|
Original
|
12H1280
5SYA1307-03
CH-5600
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-02 04 14 • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1
|
Original
|
12E1200
CH-5600
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-01 Dez 12 • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1
|
Original
|
12E1200
CH-5600
|
PDF
|