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Taiwan Semiconductor TSUP12H120H 12A, 120V, TRENCH SCHOTTKY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TSUP12H120H	Digi-Reel	6,000		1	1 $1.4 10 $0.879 100 $1.4 1000 $0.41469 10000 $0.38022	Buy Now
	TSUP12H120H	Cut Tape	6,000		1	1 $1.4 10 $0.879 100 $1.4 1000 $0.41469 10000 $0.38022	Buy Now
	TSUP12H120H	Reel	6,000		6,000	1 - 10 - 100 - 1000 - 10000 $0.319	Buy Now
Mouser Electronics	TSUP12H120H		6,000			1 $0.86 10 $0.696 100 $0.542 1000 $0.374 10000 $0.335	Buy Now
TME	TSUP12H120H				1	1 $0.674 10 $0.607 100 $0.498 1000 $0.449 10000 $0.401	Get Quote
EBV Elektronik	TSUP12H120H			16 Weeks	6,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc PIC32MX470F512H-120-PT IC MCU 32BIT 512KB FLASH 64TQFP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PIC32MX470F512H-120-PT	Tray	1,492		1	1 $8.77 10 $8.77 100 $8.77 1000 $8.77 10000 $8.77	Buy Now
KEMET Corporation C1812H122JGGAC7800 CAP CER 1200PF 2KV C0G/NP0 1812
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C1812H122JGGAC7800	Digi-Reel	1,159		1	1 $15.49 10 $11.154 100 $8.8437 1000 $8.8437 10000 $8.8437	Buy Now
	C1812H122JGGAC7800	Cut Tape	1,159		1	1 $15.49 10 $11.154 100 $8.8437 1000 $8.8437 10000 $8.8437	Buy Now
	C1812H122JGGAC7800	Reel	1,000		500	1 - 10 - 100 - 1000 $7.54193 10000 $7.54193	Buy Now
TTI	C1812H122JGGAC7800	Reel	500		500	1 - 10 - 100 - 1000 $7.28 10000 $7.28	Buy Now
Advanced Thermal Solutions Inc ATS-12H-12-C2-R0 HEATSINK 50X50X12.7MM XCUT T766
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ATS-12H-12-C2-R0	Tray	25		1	1 $4.18 10 $4.064 100 $4.18 1000 $4.18 10000 $4.18	Buy Now
Advanced Thermal Solutions Inc ATS-12H-122-C2-R0 HEATSINK 50X50X15MM XCUT T766
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ATS-12H-122-C2-R0	Tray	25		1	1 $3.98 10 $3.872 100 $3.98 1000 $3.98 10000 $3.98	Buy Now

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12H12 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TB230P-12H12	Original	TB230P-12H12	PDF
5SLX12E1200 Abstract: No abstract text available Text: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1273 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1641-00 Apr 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area	Original	12H1273 CH-5600 5SLX12E1200	PDF
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1262 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1629-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage	Original	12H1262 CH-5600	PDF
MJ86 Abstract: 57 A Text: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values	Original	12H1280 CH-5600 MJ86 57 A	PDF
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values	Original	12H1280 CH-5600	PDF
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values	Original	12H1280 CH-5600	PDF
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1280 PRELIMINARY Die size: 9.1 x 9.0 mm Doc. No. 5SYA1307-01 July 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide	Original	12H1280 5SYA1307-01 CH-5600	PDF
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1280 Die size: 9.1 x 9.0 mm Doc. No. 5SYA1307-03 04 14 •     Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications	Original	12H1280 5SYA1307-03 CH-5600	PDF
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1200 Die size: 9.1 x 9.1 mm Doc. No. 5SYA1638-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions	Original	12H1200 5SYA1638-01 CH-5600	PDF
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1274 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1302-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area	Original	12H1274 CH-5600	PDF
NF 034 Abstract: IGBT abb datasheets 12K1201 Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1201 Die size: 11.9 x 11.2 mm Doc. No. 5SYA1635-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions	Original	12K1201 5SYA1635-01 CH-5600 NF 034 IGBT abb datasheets 12K1201	PDF
Untitled Abstract: No abstract text available Text: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-02 04 14 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1	Original	12E1200 CH-5600	PDF
Untitled Abstract: No abstract text available Text: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-01 Dez 12 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1	Original	12E1200 CH-5600	PDF
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1201 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1635-00 Mar 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions	Original	12K1201 CH-5600	PDF

12H562 Abstract: panasonic plastic film capacitor marking code 10h9 ZR8513 H8822 H12H102 marking ZR 12H112 Text: Film Capacitors High-Voltage Metallized Polypropylene ECW-H Series This series is designed for applications where high frequency, high pulse voltage and high current are required. Features • • • • Very low loss at high frequency Very small inherent temperature rise	OCR Scan	1000Vp 75kHz 1250VDC) 1200Vp_ 1600VDC) 1500Vp 2500VDC) 800VDC, 12H562 panasonic plastic film capacitor marking code 10h9 ZR8513 H8822 H12H102 marking ZR 12H112	PDF
Untitled Abstract: No abstract text available Text: * * J Œ X 5 ^ - f X K High-Voltage Metallized Polypropylene Film Capacitor Rating & Dimensions Cap. mF Part No. ÆfëmEE a 800VDC, .0082 ü 21.0 // .0091 8113DZ(DZR) 8I2 3 D Z (G Z R ) 'pmax L max Rated volt. ECW H 8822GZ(DZR) u 8 9 I2 D Z (D Z R ) a	OCR Scan	800VDC, 8113DZ 8822GZ 8103DZ 33tiF 9000M 3000MQâ 100VDC Q-K474K	PDF

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12H12 Search Results

12H12 Price and Stock

Taiwan Semiconductor TSUP12H120H

Microchip Technology Inc PIC32MX470F512H-120-PT

KEMET Corporation C1812H122JGGAC7800

Advanced Thermal Solutions Inc ATS-12H-12-C2-R0

Advanced Thermal Solutions Inc ATS-12H-122-C2-R0

12H12 Datasheets Context Search

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5SLX12E1200

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MJ86

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NF 034

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12H562

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