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    AEROFLEX ACT-S128K32N-025F2M

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    ComSIT USA ACT-S128K32N-025F2M 11
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    128K32N Datasheets Context Search

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    smd marking code pJ 1219

    Abstract: QML-38534 SMD MARKING lah
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A_ Added case outlines M. N, 4. and 5._ 96-10-15_ K. A. Cottonqim B Figure 1; For the case outlines 4 and 5 changed dimension D3 min 98-07-08 K. A. Cottongim


    OCR Scan     		PDF

    SMD 6 PIN IC

    Abstract: ir 035P
    Text: — I l I I RAD Tolerant I I I I I- ACT-RS128K32 High Speed 4 Megabit SRAM Multichip Module Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ Preliminary 4 Low Power CMOS 128K x 8 SRAMs in one MCM Overall configuration as 128K x 32 Tolerant to 30KRad Si Latch-up Immunity to 112MeV/(mg/cm2)


    OCR Scan     		PDF ACT-RS128K32 30KRad 112MeV/ MIL-PRF-38534 SMD 6 PIN IC ir 035P

    Ali 3601

    Abstract: WF128K32NA-70HQ5 QML-38534 F128K32N k3212 5962-9471602HSA k329 5962-9471604H8C
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 05, case outlines M, N, 4, 5, 6, 7, and 8. Add vendor 96-08-30 K. A. Cottongim _CAGE code


    OCR Scan     		PDF T0047DÃ T0047GÃ Ali 3601 WF128K32NA-70HQ5 QML-38534 F128K32N k3212 5962-9471602HSA k329 5962-9471604H8C

    WT4 smd

    Abstract: SMD A1S a1s smd SAMSUNG SRAM LL-061 ACT-S128K32
    Text: I T r-t;i ix-r-mh1[•u*=i * • Ji r a m smsst : m i j, ■ m m trrsa m s i Features ■ 4 Low Power IDT or Samsung CMOS 128K x 8 SRAMs in one MCM ■ Overall configuration as 128K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25,35, 45 & 55ns Access Times, 15ns Available by Special Order


    OCR Scan     		PDF 68-Lead, 66-Lead, MIL-STD-883 004715b S128K32 WT4 smd SMD A1S a1s smd SAMSUNG SRAM LL-061 ACT-S128K32

    WE128K32N-120H1Q

    Abstract: QML-38534 ACT-E128K32N-250P7Q ACT-E128K32N-300P7Q marking H5A WE-128K32-140H1Q 5962-9458505H5C 128K32-150
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED E Added device type 06 for vendor cages 54230 and 88379. Added 99-05-14 K.A. Cottongim vendor cage 0EU86 for device types 01 through 06. Figure 1; Changed case outline M to reflect this package is available in either a


    OCR Scan     		PDF 0EU86 QML-38534 QML-38534. WE128K32N-120H1Q ACT-E128K32N-250P7Q ACT-E128K32N-300P7Q marking H5A WE-128K32-140H1Q 5962-9458505H5C 128K32-150

    SAMSUNG SRAM

    Abstract: 017p
    Text: I al ¿«Lwvai Jwki i jrJ* al J*h _1 • ■ ¡ f il* ! ISI S W4*i n 11®liJ M É . .[. |. H -H .r .•. a ip it ciHA wwn 1»i1iliirthr.riR/lr ■ PH1ÌC44\e Features ■ 4 Low Power IDT or Samsung CMOS 128K x 8 SRAMs in one MCM


    OCR Scan     		PDF C44\e 68-Lead, MIL-STD-883 S128K32 SAMSUNG SRAM 017p