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    80N80

    Abstract: ENS-60
    Text: MEMORIES Pseudo Static RAMs ★ Under developm ent C apacity C onfiguration Model No. A ccess tim e ns 60 LH5P860 70 80 100 120 150 - 64k x 8 LH5PB64 512k Pseudo Static RAM 32kx 16 LH5P1632 LH5P8128 1M 126kx8 LH5P8129 Low voltage operation 4M ★LH5PV8512


    OCR Scan     		PDF LH5P860 LH5PB64 LH5P1632 LH5P8128 126kx8 LH5P8129 LH5PV8512 LH5P832/D/N-10 28SK-DIP/ 28SOP 80N80 ENS-60

    Untitled

    Abstract: No abstract text available
    Text: □PM V<" P - M icrosvstem s In I~-c D ense-Pac - - - -C - DPS128M8A h i g jn h s ed rA am c n ik a prce c u c L etK M iiL ¿ - -O 128K X 8 C M O S SRAM M O N O LITH IC ADVANCED INFORMATION D ESC R IP TIO N : T h e D P S 1 2 8 M 8 A is a high speed m o no lithic


    OCR Scan     		PDF DPS128M8A DPS128M 600-mil 32-pin J0A037-10

    27C101

    Abstract: 27C101A u4000
    Text: JUL « fi ’ VT« PUMA 2U4000 molaic PUMA 2U4000-12/15 Issue 1.2 : July 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. / 4,194,304 bit CMOS High Speed UV EPROM Features Fast Access times of 120/150 ns Pin grid array gives 2:1 improvement over DIL.


    OCR Scan     		PDF 2U4000 2U4000-12/15 MIL-STD-883. D8-D15-016-023-D23-D31 128KxB 128Kx8 126Kx8 U4000 27C101 27C101A