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KEMET Corporation 4BSPBX3470ZBFJ Film Capacitors 1200volts 0.47uF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	4BSPBX3470ZBFJ	Box	912		48	1 - 10 - 100 $10.13 1000 $9.74 10000 $9.55	Buy Now
KEMET Corporation 4BSPBX4100ZAJJ Film Capacitors 1200volts 1uF 5% 1200volts 1uF 5%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	4BSPBX4100ZAJJ	Box			108	1 - 10 - 100 - 1000 $8.41 10000 $7.97	Buy Now
KEMET Corporation 4BSPBX3470ZAFJ Film Capacitors 1200volts 0.47uF 5%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	4BSPBX3470ZAFJ	Bulk			104	1 - 10 - 100 - 1000 $7.36 10000 $7.16	Buy Now
KEMET Corporation 4BSPBX4120ZBJJ Film Capacitors 1200volts 1.2uF 5%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	4BSPBX4120ZBJJ	Bulk			108	1 - 10 - 100 - 1000 $8.32 10000 $8.32	Buy Now
KEMET Corporation 4CAPUC3470AA1J Film Capacitors 1200volts 0.47uF 5%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	4CAPUC3470AA1J	Bulk			560	1 - 10 - 100 - 1000 $3.4 10000 $3.12	Buy Now

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1200VOLTS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PRESS FIT DIODES Abstract: 2374A Text: GAM2501 thru GAM2512 High Voltage Press Fit Diodes For Automotive Voltage Range 100 to 1200Volts Current 25 Amps Technical Specification: Features: Low leakage Low forward voltage drop High current capability High forward surge current capability	Original	PDF	GAM2501 GAM2512 1200Volts MIL-STD-202E 105oC 150oC PRESS FIT DIODES 2374A
7MBR30SA060-50 Abstract: 1200V 2MBI300N-060-04 7mbr35sa 7MBR30SA060 7MBI50N-120 2mbi200n 2MBI150NC-120 2MBI50N-120 2MBI75N-120 Text: IGBT MODULES Nov-01 Quick Selection Guide IGBT modules N series * Low saturation voltage VCE sat Max. 2.8volts (600volts class), 3.3volts (1200volts class) * High speed switching ton 1.2ms toff 1.0ms tf 0.35ms (600volts class) * Low switching noise ton 1.2ms toff 1.5ms tf 0.5ms (1200volts class)	Original	PDF	Nov-01 600volts 1200volts 1MBI200N-120 7MBR25SA120 7MBR25SA140 7MBR30SA060-50 1200V 2MBI300N-060-04 7mbr35sa 7MBR30SA060 7MBI50N-120 2mbi200n 2MBI150NC-120 2MBI50N-120 2MBI75N-120
Untitled Abstract: No abstract text available Text: GAR2501 thru GAR2512 / GARS2501 thru GARS2512 High Voltage Button Diodes For Automotive Voltage Range 100 to 1200Volts Current 25 Amps Technical Specification: Features: Low leakage Low forward voltage drop High current capability High forward surge current capability	Original	PDF	GAR2501 GAR2512 GARS2501 GARS2512 1200Volts MIL-STD-202E 105oC 150oC
GAM5012 Abstract: GAM5010 GAM5004 GAM5006 GAM5008 GAM5002 PRESS FIT DIODES GAM5001 Text: GAM5001 thru GAM5012 High Voltage Press Fit Diodes For Automotive Voltage Range 100 to 1200Volts Current 50 Amps Technical Specification: Features: Low leakage Low forward voltage drop High current capability High forward surge current capability	Original	PDF	GAM5001 GAM5012 1200Volts MIL-STD-202E 105oC 150oC GAM5012 GAM5010 GAM5004 GAM5006 GAM5008 GAM5002 PRESS FIT DIODES
Untitled Abstract: No abstract text available Text: GARL2501F thru GARL2512F GARSL2501F thru GARSL2512F High Voltage Button Diodes For Automotive Voltage Range 100 to 1200Volts Current 25 Amps Technical Specification: Features: Low leakage Low forward voltage drop High current capability High forward surge current capability	Original	PDF	GARL2501F GARL2512F GARSL2501F GARSL2512F 1200Volts MIL-STD-202E 105oC 150oC
Untitled Abstract: No abstract text available Text: GARL2501 thru GARL2512 / GARSL2501 thru GARSL2512 High Voltage Button Diodes For Automotive Voltage Range 100 to 1200Volts Current 25 Amps Technical Specification: Features: Low leakage Low forward voltage drop High current capability High forward surge current capability	Original	PDF	GARL2501 GARL2512 GARSL2501 GARSL2512 1200Volts MIL-STD-202E 105oC 150oC
CM75TU-24F Abstract: td 25 n 1200 Text: CM75TU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Six IGBTMOD 75 Amperes/1200 Volts J S - NUTS (5 TYP) T (4 TYP.) K K R CM P N P GUP EUP L GVP EVP N L GWP EWP N L B E Q M GVN EVN GUN EUN TC	Original	PDF	CM75TU-24F Amperes/1200 CM75TU-24F td 25 n 1200
dsa 362m Abstract: DSA-302M dsa 452m dsa302m DSA-301LA DSA-242MA MMCC 362M smd marking Yd Mitsubishi Materials Surge Absorber DSA-302MA Text: •Features ●電話機モデム、FAX等電話回線に接続される機器のサージ対策。 ●コンピュータ等の通信回路に接続される機器のサージ対策。 ●UL規格認定品もあります。 ●Surge protection for telephone lines. telephone, modem, facsimile etc.	Original	PDF	101300v IEC61000-4-2 IEC61000-4-2 150pF 30kVmax 10/560s 10/160s 10/700s 15kVmax 5-100kHz dsa 362m DSA-302M dsa 452m dsa302m DSA-301LA DSA-242MA MMCC 362M smd marking Yd Mitsubishi Materials Surge Absorber DSA-302MA
Untitled Abstract: No abstract text available Text: CM75TU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Six IGBTMOD 75 Amperes/1200 Volts J S - NUTS (5 TYP) T (4 TYP.) K K R CM P N P GUP EUP L GVP EVP N L GWP EWP N L B E Q M GVN EVN GUN EUN TC	Original	PDF	CM75TU-24F Amperes/1200
CM75TU-24F Abstract: 150a 400v diode bridge Text: CM75TU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Six IGBTMOD 75 Amperes/1200 Volts J S - NUTS (5 TYP) T (4 TYP.) K K R CM P N P GUP EUP L GVP EVP N L GWP EWP N L B E Q M GVN EVN GUN EUN TC	Original	PDF	CM75TU-24F Amperes/1200 CM75TU-24F 150a 400v diode bridge
SW06PCR012 Abstract: S2013 westcode england diode stud Text: WESTCODE SEMICONDUCTORS 3T E » • RTOTìSS DDGESMS 7 ■ ÜIESB T - o l - ï ? f WESTCODE ® SEMICONDUCTORS . TECHNICAL PUBLICATION D P12 ISSUE 2 May, 1989 Stud-Base Silicon Rectifier Diodes Type PCN/PCR012 17amperes average: up to 1200volts Vr r m	OCR Scan	PDF	PCN/PCR012 17amperes 220A2 290A2 213A2s -32UNF SN151JL SW06PCR012 S2013 westcode england diode stud
Untitled Abstract: No abstract text available Text: POWEREX 3=iE J> INC m 7STLlb S l OGDMflTT fl • PRX m /H ÊR EX ¡Q221203 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 * Chopper IGBTMOD	OCR Scan	PDF	BP107, Q221203 Amperes/1200 IQ221203 Amperes/1200Volts
IEF212A1 Abstract: modulo IGBT 600V 16 le15a diode transistor 400 volts.50 amperes 9303C Text: POWEREX INC 3TE » • 7STMb21 DD04ÔST ? B I P R X IE F 2 1 2 A 1 * Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 S ix -IG B T Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 P O W G !" M O C Iu IB	OCR Scan	PDF	IEF212A1 BP107, Amperes/1200 XT-39-31 15Amperes/1200Volts l0l10-3 modulo IGBT 600V 16 le15a diode transistor 400 volts.50 amperes 9303C
transistor 400 volts.50 amperes Abstract: prx t9 Transistor GE 67 Text: P O WE R E X m INC 31E D • 72R4b21 U B Bt C . Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14	OCR Scan	PDF	72mb21 GQQM775 ID2212A2 BP107, 25Amperes/1200Volts Amperes/1200 transistor 400 volts.50 amperes prx t9 Transistor GE 67

ic601 Abstract: C601 C601PM C601PA C601PB C601PC C601PD C601PE C601PS Text: C601 40mm Thyristor 1800V / 750A S IL IC O N ^ v>Sr POWER The C601 is specifically designed for phase control applications and processed by multidiffusion, utilizing 40mm diameter silicon and a unique pilot gate. It is supplied in a disk package ready to mount using commercially available heat dissipators and	OCR Scan	PDF	1800V1750A C601PA 1200Volts 1200Volts C601PB C601PC C601PD C601PE C601PM C601PS ic601 C601