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    11E13 Search Results

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    11E13 Price and Stock

    NXP Semiconductors LPC11E13FBD48-301,

    IC MCU 32BIT 24KB FLASH 48LQFP
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    DigiKey LPC11E13FBD48-301, Tray 165 1
    • 1 $3.83
    • 10 $2.887
    • 100 $2.43013
    • 1000 $2.137
    • 10000 $2.07261
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    Citizen Finedevice Co Ltd CLU04Q-1211E1-352M2X2

    LED COB CLU04Q WARM WHT SQ 3500K
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    DigiKey CLU04Q-1211E1-352M2X2 Tray 30 1
    • 1 $14.73
    • 10 $11.058
    • 100 $14.73
    • 1000 $8.32499
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    Citizen Finedevice Co Ltd CLU04Q-1211E1-352H5X3

    LED COB CLU04Q WARM WHT SQ 3500K
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    DigiKey CLU04Q-1211E1-352H5X3 Tray 30 1
    • 1 $14.73
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    • 100 $14.73
    • 1000 $8.32499
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    Citizen Finedevice Co Ltd CLU04Q-1211E1-303L7X4

    LED COB CLU04Q WM WHT SQ 3000K
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    DigiKey CLU04Q-1211E1-303L7X4 Tray 29 1
    • 1 $14.58
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    • 1000 $8.325
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    Citizen Finedevice Co Ltd CLU04Q-1211E1-302H5X3

    LED COB CLU04Q WARM WHT SQ 3000K
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    DigiKey CLU04Q-1211E1-302H5X3 Tray 28 1
    • 1 $14.73
    • 10 $11.058
    • 100 $14.73
    • 1000 $8.32499
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    11E13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    11a10

    Abstract: 11J126 11F-11
    Text: 13402 SOUTH 71 HIGHWAY GRANDVIEW, MO 64030 E-mail: [email protected] 816 761-6314 FAX (816) 763-2278 PART NUMBER ½LI2 ( µJ ) "L" NO DC ( µ H) DCR MAX. (Ω) DCI MAX. (Amps) "L" WITH DCI (µH) TEST LEVEL (VRMS) 5% 10% 20% 30% 40% 50% DCI (Amps) FOR % DECREASE IN "L"


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    PDF 11A11 11A19 050ctory 164-32UNC 11a10 11J126 11F-11

    Ediswan

    Abstract: 11E13 Scans-0017259
    Text: 11E13 EDISWAN IIEI3 H.F. D O U B LE TETRO D E Indirectly heated TENTATIVE G ENERAL The 11E13 is an indirectly heated, miniature based, h.f. double tetrode. It is internally neutralised and is intended for use as a push-pull amplifier at frequencies up to 225 Mc/s.


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    PDF 11E13 11E13 Ediswan Scans-0017259

    imperial m015

    Abstract: BF253
    Text: ANALOG ► DEVICES Dual/Quad Single Supply Operational Amplifier 0P292/0P492 FEATURES Single Supply Operation: 4.5 V to 33 V Input Common Mode Includes Ground Output Swings to Ground High Slew Rate: 3 V / jjls High Gain Bandwidth: 4 MHz Low Input Offset Voltage


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    PDF 0P292/0P492 14-Lead OP292/OP492 SO-14 imperial m015 BF253

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 1 D 1 3 6 0 E IB M 1 1 D 2 3 6 0 E IB M 1 1 E 1 3 6 0 E IB M 1 1 E 2 3 6 0 E 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 I : tRAc i RAS Access Time 60ns ; tcAc : CAS Access Time 15ns 70ns I I S 18ns j


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    PDF 72-Pin 110ns 130ns IBM11D1360E IBM11E1360E IBM11D2360E IBM11E2360E SA14-4313 03H7149) SA14-4309

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    Abstract: No abstract text available
    Text: IB M 1 1 D 1 3 2 0 L IB M 1 1 E 1 3 2 0 L 1M x 32 D R A M M odule Features • • • Low current consum ption • All inputs & outputs a re fully T T L & C M O S com patible • Fast P a g e M o de a c c e ss cycle • Refresh M odes: R A S -O n ly and C B R


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    PDF 110ns 130ns 1320L 1320L 03H7550 MMDS28DSU-00

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    Untitled

    Abstract: No abstract text available
    Text: IBM11D1320BC IBM11D1320BB 11E1320BC 11E1320BB IM x 32 DRAM Module Features All inputs & outputs are fully TTL & CM O S compatible Fast Page Mode access cycle Refresh Modes: RAS-Only and CBR 1024 refresh cycles distributed across 16ms 10/10 Addressing Row/Column


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    PDF IBM11D1320BC IBM11D1320BB IBM11E1320BC IBM11E1320BB 72-Pin 110ns 130ns 11D1320BB/C standarE1320BB

    Untitled

    Abstract: No abstract text available
    Text: IBM11D1360Q 11E1360Q IBM11D2360Q IBM11E2360Q 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 : W c ; RAS Access Time 60ns 70ns I tcAC i CAS Access Time 15ns 20ns 30ns 35ns j Iaa !Access Time From Address


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    PDF IBM11D1360Q IBM11E1360Q IBM11D2360Q IBM11E2360Q 72-Pin 110ns 130ns

    OT239

    Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
    Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to


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    11E23

    Abstract: No abstract text available
    Text: IBM Table of Contents Alphanumeric Index. 11 General Information. 15


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    PDF IBM11D1320BB 11E23

    RIR AS3 ON

    Abstract: No abstract text available
    Text: IB M 1 1 D 1 3 6 0 L IB M 1 1 E 1 3 6 0 L 1 M x 3 6 D R A M Module Features • Single 5V, ± 0.5V Power Supply • Low current consumption • All inputs & outputs are fully TTL & CMOS compatible • Fast Page Mode access cycle • Refresh Modes: RAS-Only and CBR


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    PDF 72-Pin 110ns 130ns 07H4991 MMDS30DSU-00 IBM11D1360L IBM11E1360L RIR AS3 ON

    ECC89

    Abstract: STR 6267 str g 5551 6C51H-B 6N3C ecc189 6H13C 6l6gt str f 6267 6CM5
    Text: 6 Z a 121200 MOSKVA G 200 ELECTRONQRGTECHNICA 5 2 ELORG MOSKVA 200 0 240-96-07 5 3 411.386 REPLACEMENT GUIDE for USSR and FOREIGN ELECTRONIC TUBES U SSR - M O SC O W Type of U SSR Foreign eq u ivalen ts iA in 1147c 1142111 31422c 5J1038M 5I43C 5I44M K 5I44C


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    PDF 1147c 31422c 5J1038M 5I43C 5I44M 5I44C 6/H22C WT171 DY802 GY501 ECC89 STR 6267 str g 5551 6C51H-B 6N3C ecc189 6H13C 6l6gt str f 6267 6CM5

    IBM 1M x 4

    Abstract: 11D1360BA 11E1360BB
    Text: IBM11D1360BB IBM11D1360BA 11E1360BB 11E1360BA 1M x 36 D R A M M odule Features All inputs & outputs are fully TTL & CMOS compatible Fast Page Mode access cycle Refresh Modes: RAS-Only and CBR 1024 refresh cycles distributed across 16ms 10/10 Addressing Row/Column


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    PDF IBM11D1360BB IBM11D1360BA IBM11E1360BB IBM11E1360BA 72-Pin 110ns 130ns IBM11D1360BA/B 72-pinle MMDS14DSU-00 IBM 1M x 4 11D1360BA 11E1360BB

    IMx36

    Abstract: 11D-1320B
    Text: IB M 11D 1360ED IB M 1 1E 1 3 6 0 ED 1M x 36 DRAM Module Preliminary Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 Ir a c RAS Access Time 60ns 70ns 'C A C CAS Access Time 15ns 20ns 35ns >AA Access Time From Address 30ns >RC Cycle Time


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    PDF 72-Pin 110ns 130ns 03H7148 MMDS21DSU-00 11D1360ED IBM11E1360ED IMx36 11D-1320B

    Untitled

    Abstract: No abstract text available
    Text: The Optimum Choice 300 RED SCHOOL LANE industries , INC. PART NUMBER V4LI2 "L“ NO DC FH DCR MAX. DCI MAX. "L” WITH DCI (p H ) PHILLIPSBURG, N.J. 08865 TEST LEVEL DCI (Amps) (VRMS) 5% 10% (908) 454-2600 FAX (908) 454-3742 FOR % DECREASE IN "LII <n> (Amps)


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    PDF 11A11 11A19

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 1 D 1 3 6 0 Q IB M 1 1 E 1 3 6 0 Q IB M 1 1 D 2 3 6 0 Q IB M 1 1 E 2 3 6 0 Q 1M/2M x 36 DRAM Module Features All inputs & outputs are fully TTL & CMOS compatible Low active current dissipation Fast Page Mode access cycle Refresh Modes: RAS-Only, CBR, and Hidden


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    PDF 72-Pin 110nsd IBM11D2360Q IBM11E2360Q IBM11D1360Q IBM11E1360Q 26H2703 26H2704)

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 1 D 1 3 6 0 B D IB M 1 1 E 1 3 6 0 B D 1 M x 36 D R A M M odule Features Low active current dissipation All inputs & outputs are fully TTL & CMOS compatible Fast Page Mode access cycle Refresh Modes: RAS-Only and CBR 1024 refresh cycles distributed across 16ms


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    PDF 72-Pin 110ns 130ns IBM11D1360BD 4MB-00 11D1360BD IBM11E1360BD 03H7141 MMDS18DSU-00