Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    114X10 Search Results

    SF Impression Pixel

    114X10 Price and Stock

    3M 3M-4611-4--X-10.5--25

    TAPE DBL SIDED GRAY 4"X10 1/2"
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 3M-4611-4--X-10.5--25 Bulk 1
    • 1 $197.5
    • 10 $197.5
    • 100 $197.5
    • 1000 $197.5
    • 10000 $197.5
    		Buy Now

    CR Seals 101X114X10 HMSA1 R

    Double Lip Oil Seal, I.D. 101 mm, O.D. 114 mm, Thickness 10 mm | CR Seals (SKF) 101X114X10 HMSA1 R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 101X114X10 HMSA1 R Bulk 4 Weeks 1
    • 1 $22.47
    • 10 $21.35
    • 100 $19.1
    • 1000 $19.1
    • 10000 $19.1
    		Get Quote

    Dichtomatik 100X114X10SB (ALTERNATE: 75001650)

    Oil Seal, 100mm ID, 114mm OD, 10mm Width | Dichtomatik 100X114X10SB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 100X114X10SB (ALTERNATE: 75001650) Bulk 3 Weeks 1
    • 1 $18.58
    • 10 $18.58
    • 100 $18.58
    • 1000 $18.58
    • 10000 $18.58
    		Get Quote

    Dremec DE 114X10

    Screwed spacer sleeve; 10mm; Int.thread: M3; hexagonal; brass
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 114X10 13,083 10
    • 1 -
    • 10 $0.219
    • 100 $0.183
    • 1000 $0.154
    • 10000 $0.154
    		Buy Now

    ABB Group NPL11/4X10-G

    OC NPL11/4X10G PVC CTD COND NIPPLE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Sager NPL11/4X10-G 1
    • 1 $163.92
    • 10 $152.21
    • 100 $142.06
    • 1000 $142.06
    • 10000 $142.06
    		Buy Now

    114X10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FDP2670

    Abstract: D2Pak Package dimensions CBVK741B019 EO70 F63TNR FDB2670 FDP7060 NDP4060L
    Text: FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and


    Original     		FDP2670/FDB2670 FDP2670 D2Pak Package dimensions CBVK741B019 EO70 F63TNR FDB2670 FDP7060 NDP4060L PDF

    CBVK741B019

    Abstract: EO70 F63TNR FDB6644 FDP6644 FDP7060 NDP4060L
    Text: FDP6644/FDB6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		FDP6644/FDB6644 CBVK741B019 EO70 F63TNR FDB6644 FDP6644 FDP7060 NDP4060L PDF

    high voltage mosfet, to-220 case

    Abstract: No abstract text available
    Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


    Original     		FDP6644S/FDB6644S FDP6644S FDP6644S/FDB6644S FDP6644/FDB6644 high voltage mosfet, to-220 case PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


    Original     		FDP6690S/FDB6690S FDP6690S FDP6690S/FDB6690S FDP6035AL/FDB6035AL PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDP6060 NDB6060 PDF

    T0-263

    Abstract: CBVK741B019 FDB4020P FDP4020P FDP7060 low threshold mosfet p-channel TO-220
    Text: FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage


    Original     		FDP4020P/FDB4020P O-220 O-263 T0-263 CBVK741B019 FDB4020P FDP4020P FDP7060 low threshold mosfet p-channel TO-220 PDF

    FDB7045L

    Abstract: CBVK741B019 EO70 F63TNR FDP7045L FDP7060 NDP4060L
    Text: FDP7045L/FDB7045L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		FDP7045L/FDB7045L FDB7045L CBVK741B019 EO70 F63TNR FDP7045L FDP7060 NDP4060L PDF

    TO220 Semiconductor Packaging

    Abstract: CBVK741B019 EO70 F63TNR FDB6676 FDP6676 FDP7060 NDP4060L marking code ng Fairchild
    Text: FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		FDP6676/FDB6676 TO220 Semiconductor Packaging CBVK741B019 EO70 F63TNR FDB6676 FDP6676 FDP7060 NDP4060L marking code ng Fairchild PDF

    zener diode 3.0 b2

    Abstract: m 9835 zener diodes color coded CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7050 NDP4060L
    Text: March 1996 NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDP7050 NDB7050 zener diode 3.0 b2 m 9835 zener diodes color coded CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7050 NDP4060L PDF

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L NDP6060L
    Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		NDP6060L NDB6060L CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP5645/FDB5645 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 83 A, 60 V.


    Original     		FDP5645/FDB5645 PDF

    FDP5680

    Abstract: No abstract text available
    Text: FDP5680/FDB5680 60V N-Channel PowerTrenchTM MOSFET General Description Features • 40 A, 60 V. RDS ON = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters


    Original     		FDP5680/FDB5680 FDP5680 PDF

    Untitled

    Abstract: No abstract text available
    Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		NDP6060L NDB6060L PDF

    MOSFET and parallel Schottky diode

    Abstract: CBVK741B019 EO70 FDB6644S FDP6644 FDP6644S FDP7060
    Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


    Original     		FDP6644S/FDB6644S FDP6644S FDP6644S/FDB6644S FDP6644/FDB6644 MOSFET and parallel Schottky diode CBVK741B019 EO70 FDB6644S FDP6644 FDP7060 PDF

    zener diode 3.0 b2

    Abstract: m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L NDP7061L
    Text: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDP7061L NDB7061L zener diode 3.0 b2 m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L PDF

    m 9835

    Abstract: CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7060 NDP4060L NDP7060
    Text: May 1996 NDP7060 / NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDP7060 NDB7060 m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7060 NDP4060L PDF

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB7051 NDP4060L NDP7051 Polycarbonate
    Text: August 1996 NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDP7051 NDB7051 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7051 NDP4060L Polycarbonate PDF

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L NDP7061L
    Text: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDP7061L NDB7061L CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L PDF

    50s MARKING CODE

    Abstract: FDP7030BL FDP7030BLS MOSFET and parallel Schottky diode CBVK741B019 EO70 FDB7030BLS FDP7060 NDP4060L
    Text: FDP7030BLS / FDB7030BLS 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


    Original     		FDP7030BLS FDB7030BLS FDP7030BLS FDP7030BL 50s MARKING CODE MOSFET and parallel Schottky diode CBVK741B019 EO70 FDB7030BLS FDP7060 NDP4060L PDF

    FDP6030BL

    Abstract: m 9835 ZENER SINGLE COLOR CODE CBVK741B019 EO70 F63TNR FDB6030BL FDP7060 NDP4060L
    Text: FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		FDP6030BL/FDB6030BL FDP6030BL m 9835 ZENER SINGLE COLOR CODE CBVK741B019 EO70 F63TNR FDB6030BL FDP7060 NDP4060L PDF

    CBVK741B019

    Abstract: EO70 F63TNR FDB2570 FDP2570 FDP7060 NDP4060L D2Pak Package dimensions
    Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and


    Original     		FDP2570/FDB2570 CBVK741B019 EO70 F63TNR FDB2570 FDP2570 FDP7060 NDP4060L D2Pak Package dimensions PDF

    corrugated box spec

    Abstract: TO220 Semiconductor Packaging FDP7060 NDP4060L CBVK741B019 EO70 corrugated packaging F9852
    Text: TO-220 Tube Packing Data TO-220 Tube Packing Configuration: Figure 1.0 Packaging Description: TO-220 parts are shipped normally in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in standard option are placed inside a dissipative


    Original     		O-220 530mm 130mm 114mm 102mm F9852 NDP4060L corrugated box spec TO220 Semiconductor Packaging FDP7060 NDP4060L CBVK741B019 EO70 corrugated packaging F9852 PDF

    CBVK741B019

    Abstract: EO70 F63TNR FDB6030BL FDP6030BL FDP7060 NDP4060L
    Text: FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		FDP6030BL/FDB6030BL CBVK741B019 EO70 F63TNR FDB6030BL FDP6030BL FDP7060 NDP4060L PDF

    2539a

    Abstract: No abstract text available
    Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and


    Original     		FDP2570/FDB2570 2539a PDF