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Low Voltage DIACs Abstract: No abstract text available Text: DB3/DB4 Silicon Bidirectional Diacs VOLTAGE RANGE: 28-45 V DO-35 Features The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse	Original	PDF	DO-35 1111sealed 1111thyristors 1111breakover 1111current 1111volts 120Hz 500KD 100Hz Low Voltage DIACs
Untitled Abstract: No abstract text available Text: BL GALAXY ELECTRICAL DB3S.DB4S SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at	Original	PDF	1111sealed 1111thyristors 1111breakover 1111current 1111volts 100Hz
Untitled Abstract: No abstract text available Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at	Original	PDF	1111sealed 1111thyristors 1111breakover 1111current 1111volts DO-35 100Hz
Untitled Abstract: No abstract text available Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse	Original	PDF	1111sealed 1111thyristors 1111breakover 1111current 1111volts 100Hz
bl db3 galaxy Abstract: db3 bl 100HZ 05R05 DB3 galaxy Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse	Original	PDF	1111sealed 1111thyristors 1111breakover 1111current 1111volts 100HZ bl db3 galaxy db3 bl 100HZ 05R05 DB3 galaxy
bl db3 galaxy Abstract: bl db3 db3 bl DIACs Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse	Original	PDF	1111sealed 1111thyristors 1111breakover 1111current 1111volts DO-35 100Hz bl db3 galaxy bl db3 db3 bl DIACs
bl db3 galaxy Abstract: db3 bl DB3 galaxy bl db3 bl db4 Galaxy Semiconductor db3 DIACS db3 a-405 A-405 Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse	Original	PDF	1111sealed 1111thyristors 1111breakover 1111current 1111volts 100Hz bl db3 galaxy db3 bl DB3 galaxy bl db3 bl db4 Galaxy Semiconductor db3 DIACS db3 a-405 A-405
Untitled Abstract: No abstract text available Text: DB3/DB4 Silicon Bidirectional Diacs VOLTAGE RANGE: 28-45 V A-405 Features The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse	Original	PDF	1111sealed 1111thyristors 1111breakover 1111current 1111volts 120Hz 500KD 100Hz