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    1101 TRANSISTOR Search Results

    1101 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1101 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    intel 1101

    Abstract: intel processor transistor count inferno os PS/2 touchpad StrongARM SA-1100 EPOC32 IEEE1284 SA-1101 intel 27817 microprocessor mouse circuit diagram
    Text: Intel StrongARM® SA-1101 Microprocessor Companion Chip Brief Datasheet Product Features The Intel® StrongARM®SA-1101 Microprocessor Companion Chip SA-1101 allows developers to utilize a cost-effective and power-efficient solution for portable applications. The SA-1101, when coupled with the


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    PDF SA-1101 SA-1101 SA-1101) SA-1101, SA-1100 SA-1100) intel 1101 intel processor transistor count inferno os PS/2 touchpad StrongARM SA-1100 EPOC32 IEEE1284 intel 27817 microprocessor mouse circuit diagram

    2SD2395

    Abstract: 2SB1566 B350
    Text: Transistors 2SB1566 2SD2395 94L-459-B350 (94L-1101-D350) 296


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    PDF 2SB1566 2SD2395 94L-459-B350) 94L-1101-D350) 2SD2395 2SB1566 B350

    Untitled

    Abstract: No abstract text available
    Text: 1100 Series Metal Tester Model 1101-C Thermoelectric Alloy Sorter Free Test Service Non-destructive tester ◆ Seebeck Effect thermocouple principle ◆ Precision Magnetic Amplifiers Description Principles of Operation Acromag’s Model 1101-C Thermoelectric Metal


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    PDF 1101-C

    FBD15

    Abstract: D14-251 KPY10 KPY12 KPY14 SA-1101 intel 27823 intel DOC FBA11 FBD10
    Text: Intel StrongARM® SA-1101 Microprocessor Companion Chip Specification Update September 1999 Notice: The Intel® StrongARM® SA-1101 microprocessor companion chip may contain design defects or errors known as errata. Characterized errata that may cause the product to deviate


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    PDF SA-1101 SA-1101 FBD15 D14-251 KPY10 KPY12 KPY14 intel 27823 intel DOC FBA11 FBD10

    theory on 5V unipolar STEPPER MOTOR

    Abstract: dac MC1408 Sample and Hold Amplifiers HCTL-1101#PLC Encoder interface with HCTL-1100 hctl-1101 hctl1101 5v 1.8 deg stepper motor UDN2954
    Text: HCTL-1101 General Purpose Control ICs. Data Sheet Description Features The HCTL-1101 series is a high performance, general purpose motion control IC, fabricated in Avago CMOS technology. It frees the host processor for other tasks by performing all the time-intensive functions of digital


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    PDF HCTL-1101 HCTL-1101 HCTL-1101, HCTL-1101: AV02-1257EN theory on 5V unipolar STEPPER MOTOR dac MC1408 Sample and Hold Amplifiers HCTL-1101#PLC Encoder interface with HCTL-1100 hctl1101 5v 1.8 deg stepper motor UDN2954

    SA-1101

    Abstract: intel 27817 intel 27823 intel DOC
    Text: StrongARM*SA-1101 Microprocessor Companion Chip Specification Update October 1998 Notice: The name of product may contain design defects or errors known as errata. Characterized errata that may cause the name of product’s behavior to deviate from published


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    PDF SA-1101 SA-1101 intel 27817 intel 27823 intel DOC

    arm microprocessor data sheet

    Abstract: SA-1101 intel DOC
    Text: StrongARM SA-1101 Microprocessor Companion Chip Specification Update February 1999 Notice: The name of product may contain design defects or errors known as errata. Characterized errata that may cause the name of product’s behavior to deviate from published


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    PDF SA-1101 SA-1101 arm microprocessor data sheet intel DOC

    SA-1101

    Abstract: intel 27823 intel DOC
    Text: StrongARM SA-1101 Microprocessor Companion Chip Specification Update January 1999 Notice: The name of product may contain design defects or errors known as errata. Characterized errata that may cause the name of product’s behavior to deviate from published


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    PDF SA-1101 SA-1101 intel 27823 intel DOC

    gefran 200 -2r

    Abstract: gefran 500 controller manual gefran 500 manuale manual gefran 1000 gefran 1101 gefran 800 manual gefran 500 programmazione gefran 500 programming gefran 500 manual gefran 2400
    Text: 1000 / 1001 / 1101 ISO 9001 SOFTWARE 11.x / 12.x cod. 80343 / Edit. 11- 07/01 Italiano TERMOREGOLATORI CONFIGURABILI - Manuale d’uso 2 - User’s Manual 10 - Bedienungsanleitung 18 - Manuel d’Utilisation 26 - Manual de Uso 34 - Manual do Usuário 42 English


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    PDF 96x96mm/3 220Vca. 1N4007 gefran 200 -2r gefran 500 controller manual gefran 500 manuale manual gefran 1000 gefran 1101 gefran 800 manual gefran 500 programmazione gefran 500 programming gefran 500 manual gefran 2400

    LPCXpresso Motor Control Kit

    Abstract: LPCC44
    Text: LPCXpresso Motor Control Kit - User’s Guide Copyright 2013 Embedded Artists AB LPCXpresso Motor Control Kit User’s Guide Get Up-and-Running Quickly and Start Developing Your Application On Day 1! EA2-USG-1101 Rev B LPCXpresso Motor Control Kit - User’s Guide


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    PDF EA2-USG-1101 ddi0432c/index LPC1000 com/group/lpc1000/ LPC2000 com/group/lpc2000/ LPCXpresso Motor Control Kit LPCC44

    Untitled

    Abstract: No abstract text available
    Text: P35-1101-2 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) P(D) Max. (W)300m Maximum Operating Temp (øC)150 I(DSS) Min. (A)10m I(DSS) Max. (A)50m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.


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    PDF P35-1101-2

    design ideas

    Abstract: sod110 land BP317 SC-89
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210


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    PDF MGR615 MGR613 SC-89 EIA-RS481A design ideas sod110 land BP317

    Untitled

    Abstract: No abstract text available
    Text: P35-1101-0 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) P(D) Max. (W)300m Maximum Operating Temp (øC)150 I(DSS) Min. (A)10m I(DSS) Max. (A)50m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.


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    PDF P35-1101-0

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


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    PDF BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice

    BU4508DX equivalent

    Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
    Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


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    PDF BT148-600R BT148-400R BU4508DX equivalent BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent

    1101 Static RAM

    Abstract: No abstract text available
    Text: TMS 1101 JC. TM S 1101 NC 256-BIT RANDOM-ACCESS MEMORY features • Low power dissipation • 600-nsec access time typ . 750 nsec (max) • Direct O T L and T T L compatibility • Wire-OR capability • Fully decoded on chip • Inputs fully protected •


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    PDF 256-BIT 600-nsec 1101 Static RAM

    ALD1101MA

    Abstract: 1101a 1101B
    Text: ADVANCED LINEAR DEVICES I " m \ S3E D • DESbQfi3 D000211 5^1 ■ A dvanced |/L J A LD 1101A /A L D 1101B /A L D 1101 d e vices D U A L N -C H A N N EL M A TCH ED M O S F E T P AIR GENERAL DESCRIPTION \ PIN CONFIGURATION The ALD 1101 is a monolithic dual N-channel matched transistor pair


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    PDF DGG0211 ALD1101A/ALD1101B/ALD1101 ALD1101MA 1101a 1101B

    7B222

    Abstract: DTL or TTL integrated logic circuits 110T 256-BIT DTL 950 texas instruments DTL logic
    Text: MOS LSI TMS 1101 JC, TMS 1101 NC 256-BIT RANDOM-ACCESS M EM ORY featu es Low pow er dissipation 600-nsec access tim e typ , 750 nsec (max) D irect D T L and T T L co m p atib ility W ire-OR cap ab ility F u lly decoded on chip Inputs fu lly protected Data O u t and Data O ut available


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    PDF 256-BIT 600-nsec 16-pin 300-inch 7B222 DTL or TTL integrated logic circuits 110T DTL 950 texas instruments DTL logic

    Untitled

    Abstract: No abstract text available
    Text: KSR2101 FNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, >4.7, R jM T H l) • Complement to KSR 1101 ABSOLUTE MAXIMUM RATINGS (TA-2 5 t)


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    PDF KSR2101 OT-23 TA-25T; -100M, -10mA -10mA, -100/iA -20mA

    marking d7k

    Abstract: KSR1101 KSR2101
    Text: PNP EPITAXIAL SILICON TRANSISTOR KSR2101 SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (Ri =4.7K£1, R2=4.7K£i) • C om plem ent to K S R 1101 ABSOLUTE MAXIMUM RATINGS (TA=25°C)


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    PDF KSR2101 KSR1101 -10nA, marking d7k KSR1101 KSR2101

    Untitled

    Abstract: No abstract text available
    Text: urm LT 1101 TECHNOLOGY Precision, M icropower, Single Supply Instrum entation Am plifier Fixed G ain =10 or 100 D C S C A IP T IO A F€ ATU R € S • Gain Error ■ Gain Non-Linearity ■ Gain Drift ■ Supply Current ■ Offset Voltage ■ Offset Voltage Drift


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    PDF 105/iAMax 160/tV 600pA 100dB 250kHz LT1101

    14CL 40

    Abstract: ET1102 et 1102 HFET-1101 HFET-1102 2N6680 HPAC-100A HFET1102 14cl ET 2314
    Text: NEW 2N6680 H E W L E T T PACKARD HFET-1101 HFET-1102 MICROWAVE GaAS FETS GaAs FETs COMPONENTS Features LOW NOISE FIGURE 1.6 dB Typical at 4 GHz (2N6680) 1.7 dB Maximum at 4 GHz (HFET-1102) 1.5 dB Typical HIGH GAIN 16 dB Typical at 4 GHz a HIGH OUTPUT POWER


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    PDF 2N6680 HFET-1101) HFET-1102 2N6680) HFET-1102) HFET-1102 14CL 40 ET1102 et 1102 HFET-1101 2N6680 HPAC-100A HFET1102 14cl ET 2314

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 56M PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06M NPN Type Marking Ordering Code Pin Configuration SMBTA 56M s2G Q62702-A3474 1= B 2=C 3= E Package 4 n.c. 5 = C


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    PDF Q62702-A3474 SCT-595 EHP00852

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 06M NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56M PNP II LD CO Q62702-A3473 II s1G o SMBTA 06M Pin Configuration CM Ordering Code II Marking 0Û Type Package


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    PDF Q62702-A3473 SCT-595