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    1100 CHIP RESISTOR NETWORK Search Results

    1100 CHIP RESISTOR NETWORK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    1100 CHIP RESISTOR NETWORK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    xmxx

    Abstract: yageo Phycomp 2322 711
    Text: Product specification – Jul 02, 2009 V.4 Supersedes Date of Mar. 06, 2003 1100 DATA SHEET GENERAL PURPOSE CHIP RESISTORS RC1206 5%, 1% RoHS compliant Product specification Chip Resistor Surface Mount RC SCOPE ORDERING INFORMATION - GLOBAL PART NUMBER & 12NC


    Original     		PDF RC1206 RC1206 RC22H) 9C06031A10R0FKHFT xmxx yageo Phycomp 2322 711

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 3, 12/2005 N - Channel Enhancement - Mode Lateral MOSFETs Device Characteristics From Device Data Sheet Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21125R3 MRF21125SR3

    EPA2116G

    Abstract: No abstract text available
    Text: 10Base-T Interface Module with Enhanced CMA and Resistor Network ELECTRONICS INC. EPA2116G • Optimized for AMD/PHY controllers • • Robust construction allows for IR/VP processes • • Complies with or exceeds IEEE 802.3, 10Base-T Requirements • Electrical Parameters @ 25° C


    Original     		PDF 10Base-T EPA2116G EPA2116G. CSA2116Gb EPA2116G

    EPE6119G-RC

    Abstract: jd 1803 jd 1803 data jd 1803 19 B EPF8125S BCM5201 jd 1803 4 pin EPG4000S EPA1885-6 EPE6119G
    Text: Networking www.pca.com Contents 10Base-T Networking PCA Part No. OCL µH EPA1829C EPA1990A 200 EPA2013D Turns Ratio Package Style Length Width Height 1:1/1:1 16 Pin DIP 1.00 .400 .350 1:1/1:1 16 Pin DIP 1.00 .280 .300 1:1/1:1 16 Pin DIP 1.00 .280 .310 EPE6009S


    Original     		PDF 10Base-T EPA1990A EPA2013D EPA1829C EPE6009S EPE6010S EPE6047S EPE6065AS EPE6051GM EPE6066 EPE6119G-RC jd 1803 jd 1803 data jd 1803 19 B EPF8125S BCM5201 jd 1803 4 pin EPG4000S EPA1885-6 EPE6119G

    rn73 Meggitt

    Abstract: No abstract text available
    Text: MEGGITT HOLSWORTHY HYBRID CIRCUITS ELECTRONIC ASSEMBLIES PRECISION RESISTORS SMD PRECISION RESISTORS PRECISION NETWORKS High Precision Resistors SMD TYPE RN73 SERIES Sputtered Resistive Metal Film Protective Coat Epoxy Terminations (Nickel & Solder Plating)


    Original     		PDF 10ppm/ rn73 Meggitt

    transistor c 5936 circuit diagram

    Abstract: AT-32063 c 2073 amplifier circuit diagram D2030 18 sot-363 rf power amplifier S2PB
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Hewlett-Packard AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors mounted in a


    Original     		PDF AT-32063 AT-320XX OT-363 SC-70) AT-32063, 5966-0781E transistor c 5936 circuit diagram c 2073 amplifier circuit diagram D2030 18 sot-363 rf power amplifier S2PB

    VJ HIFREQ

    Abstract: WSBM8518
    Text: Vishay Intertechnology, Inc. Super 12 Featured Products 2013 www.vishay.com/ref/2013s12 S12 S12 Super 12 Featured Products Table of Contents VCNL3020 Proximity Sensor with I2C Interface WSBM8518 Power Metal Strip Battery Shunt Resistor with Molded Enclosure


    Original     		PDF com/ref/2013s12 VCNL3020 WSBM8518 IHLP-6767GZ-5A VMN-MS6782-1302 VJ HIFREQ WSBM8518

    transistor BD 139

    Abstract: AP 1100 R1 darlington cascode second stage transistor AT-320 agilent AT32063 AT-32063
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT32063 consists of two AT-320XX transistors mounted in a


    Original     		PDF AT-32063 AT32063 AT-320XX OT-363 SC-70) AT-32063, transistor BD 139 AP 1100 R1 darlington cascode second stage transistor AT-320 agilent

    darlington cascode second stage

    Abstract: transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR AT-32063 d2030
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors


    Original     		PDF AT-32063 AT-32063 AT-320XX OT-363 SC-70) AT-32063, 5966-0781E darlington cascode second stage transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR d2030

    40MHZ

    Abstract: ADL5358XCPZ-R7 ADL5358XCPZ-WP ADL5365 ADL5358 TC4 pre amp
    Text: Dual 500-1700MHz Balanced Mixer with LO Buffer, IF Amp, and RF Balun ADL5358 Preliminary Technical Data FEATURES RF Frequency 500MHz to 1700MHz IF Frequency 40MHZ to 350MHz Power Conversion Gain of 8.5dB SSB Noise Figure of 9.5dB SSB NF with +10dBm blocker of 16.5dB


    Original     		PDF 500-1700MHz ADL5358 500MHz 1700MHz 40MHZ 350MHz 10dBm 26dBm ThR11 ADL5358XCPZ-R7 ADL5358XCPZ-WP ADL5365 ADL5358 TC4 pre amp

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S4125N Rev. 0, 1/2007 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4125NR1 MRF5S4125NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S4125N MRF5S4125NR1 MRF5S4125NBR1 MRF5S4125NR1

    AD250

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF5S4125NR1 MRF5S4125NBR1 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies up to 500 MHz. The high gain and broadband performance of


    Original     		PDF MRF5S4125N IS--95 MRF5S4125NR1 MRF5S4125NBR1 AD250

    MRF5S4125NBR1

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF5S4125NR1 ATC600B121BT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S4125N Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4125NR1 MRF5S4125NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S4125N MRF5S4125NR1 MRF5S4125NBR1 MRF5S4125NR1 MRF5S4125NBR1 A113 A114 A115 AN1955 C101 JESD22 ATC600B121BT250XT

    Untitled

    Abstract: No abstract text available
    Text: Dual 900MHz Balanced Mixer with High Side LO Buffer, IF Amp, and RF Balun ADL5358 Preliminary Technical Data FEATURES RF Frequency 700MHz to 1000MHz IF Frequency 50MHZ to 350MHz Power Conversion Gain of 8.5dB SSB Noise Figure of 9.5dB SSB NF with +10dBm blocker of 16.5dB


    Original     		PDF 700MHz 1000MHz 50MHZ 350MHz 10dBm 26dBm 900MHz ADL5358 ADL5358

    J280

    Abstract: MRF8S19140H C1825C564J5RACTU J296 J589 MRF8S19140HS mrf8s19140 ATC800B AN1955 MCRH63V337M13X21-RH
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S19140H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S19140HR3 MRF8S19140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with


    Original     		PDF MRF8S19140H MRF8S19140HR3 MRF8S19140HSR3 MRF8S19140HR3 J280 MRF8S19140H C1825C564J5RACTU J296 J589 MRF8S19140HS mrf8s19140 ATC800B AN1955 MCRH63V337M13X21-RH

    HBPF-0420

    Abstract: SOT343 C5 W04 transistor Transistor W06 transistor w04
    Text: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Hewlett-Packard’s HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420


    Original     		PDF HBFP-0405 HBFP-0420 SC-70 OT343) HBPF-0420 SOT343 C5 W04 transistor Transistor W06 transistor w04

    w06 transistor

    Abstract: Transistor W06 W04 transistor w04 transistor sot 23 w02 transistor sot 71 transistor sot w04 HBFP-0420 W04 sot 23 W02 sot 23 W02 transistor
    Text: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Avago Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT-343 surface


    Original     		PDF HBFP-0405 HBFP-0420 HBFP-0420 SC-70 OT-343) HBFP0420 w06 transistor Transistor W06 W04 transistor w04 transistor sot 23 w02 transistor sot 71 transistor sot w04 W04 sot 23 W02 sot 23 W02 transistor

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21110H MRF7S21110HR3 MRF7S21110HSR3 MRF7S21110HR3

    Untitled

    Abstract: No abstract text available
    Text: BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BGA751N7

    T491C105K050AT

    Abstract: A114 A115 AN1955 C101 JESD22 MRF7S21110HR3 MRF7S21110HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 1, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21110H MRF7S21110HR3 MRF7S21110HSR3 MRF7S21110HR3 T491C105K050AT A114 A115 AN1955 C101 JESD22 MRF7S21110HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 1, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21110H MRF7S21110HR3 MRF7S21110HSR3 MRF7S21110HR3

    mcr63

    Abstract: T491C105K050AT A114 A115 AN1955 C101 JESD22 MRF7S21110HR3 MRF7S21110HSR3 mcr63v477m
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 0, 9/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21110H MRF7S21110HR3 MRF7S21110HSR3 MRF7S21110HR3 mcr63 T491C105K050AT A114 A115 AN1955 C101 JESD22 MRF7S21110HSR3 mcr63v477m

    1100 CHIP RESISTOR NETWORK

    Abstract: No abstract text available
    Text: MA4SW610B-1 SP6T PIN Diode Switch with Integrated Bias Network MA4SW610B-1 Layout Features ♦ ♦ ♦ V 1.00 Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.9 dB Insertion Loss, 35 dB Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction


    Original     		PDF MA4SW610B-1 MA4SW610B-1 1100 CHIP RESISTOR NETWORK

    4an4

    Abstract: IM 153 qsop 16 pcb footprint M50Vm
    Text: In-line surface mount resistor networks • Very high density packaging Smallest thick film network available Saves board space • Low profile • Solid ceramic construction Dendrite free Higher power •"V". • Custom circuits available • Input/outputs available


    OCR Scan     		PDF UL94VO not3900 181A191A; ORKS/406 4an4 IM 153 qsop 16 pcb footprint M50Vm