Untitled
Abstract: No abstract text available
Text: Preliminary SMC6G10US60 COMPACTS COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, Tc=10CfC * Built in 3 0 Rectifier Circuit Package code : 21-PM-AA
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SMC6G10US60
10CfC
21-PM-AA
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Untitled
Abstract: No abstract text available
Text: Preliminary SMC6G20US60 COMPACTS COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, Tc=10CfC * Built in 3 0 Rectifier Circuit Package code : 21-PM-AA
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SMC6G20US60
10CfC
21-PM-AA
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Untitled
Abstract: No abstract text available
Text: Preliminary SMC6G15US60 COMPACTS COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, Tc=10CfC * Built in 3 0 Rectifier Circuit Package code : 21-PM-AA
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SMC6G15US60
10CfC
21-PM-AA
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Untitled
Abstract: No abstract text available
Text: 4 T H I S D R A W I N G IS U N P U B L I S H E D . C O PYRIG H T REVISIO NS R E L E A S E D FOR P U B LIC ATIO N ALL RIGHTS RESERVED. DESCRIPTION B2 REVISED PER 28MAR11 ECO-11-005140 -3:AS RK HMR SHOWN 2 . B-B D-D C-C SCALE 20:1 1.3 J A-A É T t A ' ê ' t o i t S P © f ê m t è 0 . 0 B J i H 'T © -
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ECO-11-005140
28MAR11
1000mm
17FEB97
AMP14-70-19
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OX36D-S-MR-R
Abstract: dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117
Text: ABOWEI n r r y /^ B i i ij Products BOWEI IN TEG RA TED C IR C U IT S C O .,LTD 2 0 0 7 .5 A bow ei BOWEI is one ofthe leading RF/microwave solution providers in China. With more than twenty years extensive experience, BOWEI has been engineering and manufacturing
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12000-square-meter
IS09000-2000,
Min15
MXF3200
MXF3200A
12WCMXF3200)
6WCMXF3200A)
OX36D-S-MR-R
dox5
18M08
transistor z7m
st z7m
Bowei Integrated Circuits
oxln50d
TXM11
tt 2246
transistor K117
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Untitled
Abstract: No abstract text available
Text: TAIWAN LITON ELECTRONIC H IE J> • fifiaSb^S 0 0 0 3 4 4 0 Db T « T L I T T-l 3/4 5mm SOLID STATE LAMPS L I T E M : I LTL-307ELC LOW CURRENT HIGH EFFICIENCY RED FEATURES • LOW POWER C O N S U M P T IO N . • H IG H E F F IC IE N C Y . • V E R S A T IL E
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LTL-307ELC
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5257 transistor
Abstract: n150 transistor
Text: SFH620AA/AGB SIEMENS 5.3 kV TRIOS OPTOCOUPLER AC VOLTAGE INPUT ✓ FEATURES • High Current Transfer Ratios at 5 mA: 50-600% at 1 mA: 45% typical >13 • Low CTR Degradation • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 5300 VACRMS
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SFH6206
SFH620AA/AGB
SFH620AA/AGB
SFH620AAM
5257 transistor
n150 transistor
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zilog 3818
Abstract: LF351 DAC083D
Text: a t i o n a l S e m i c o n d u c t o r DAC0830/DAC0832 8-Bit |j P Compatible, Double-Buffered D to A Converters General Description Features The DAC0830 is an advanced C M O S /S l-C r 8 -bit m ultiplying D AC designed to interface directly w ith the 8080, 8048,
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DAC0830/DAC0832
DAC0830
zilog 3818
LF351
DAC083D
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Untitled
Abstract: No abstract text available
Text: IL485 SIEMENS OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER FEATURES • Fast Turn On • Fast Turn Off • Low Input Current • Isolation Test Voltage, 5300 VACrMS APPLICATIONS • Motor Drive Controls • IGBT-p red rivers • AC/DC Power Inverters
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IL485
IL485
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Untitled
Abstract: No abstract text available
Text: SFH6318 SFH6319 SIEMENS LOW CURRENT, HIGH GAIN OPTOCOUPLER Package Dimensions in Inches mm .120±.002 (3.05+05) FEATURES • Industry Standard SOIC-8 Surface Mountable Package • High Current Transfer Ratio, 800% n n n n (•39; ± 0 5 ) C a th o d e ^
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SFH6318
SFH6319
SFH6318/6319
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2C3303
Abstract: ca3725 6676 transistor transistor C200 2N6676 2CS9
Text: File Number 2N6676, 2N6677, 2N6678 HARRIS SEMICOND SECTOR 1165.1 M 3 0 S 2 7 1 D D 4 0 b 20 EfiM • HAS SbE D T ’3 3 ~ / 9 15-A Sw ItehM aX Power Transistors TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications
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2N6676,
2N6677,
2N6678
2N6676
2N6677
2N6678
2N6676.
2C3303
ca3725
6676 transistor
transistor C200
2CS9
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st1151
Abstract: H21B1 ST1152 H21B H21B2 H21B3
Text: SLOTTED OPTICAL SWITCH OPTDELECIROHtCS H21B1/2/3 PACKAGE DIMENSIONS r îv G . SBJ t>i SECTION X - X f LEAD PROFILE t= ST1339-01 SYMBOL MILLIMETERS MIN. MAX. A 10.7 11.0 A, 3.0 3.2 3.0 3.2 As ^b .600 .750 b, .50 NOM. D 24.3 24.7 D, 11.6 12.0 d2 3.0 3.3 6.9
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H21B1/2/3
ST1339-01
ST1339-02
ST1152
750il
ST1151
H21B1
H21B
H21B2
H21B3
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KBU1010
Abstract: KBU1000
Text: O JGD K B U 1 0 00 THRU K B U 10 1 0 SINGLE PHASE 10 AMPS SILICON BRIDGE RECTIFIERS m VOLTAGE RANGE 50 to 1000 Volts CURRENT 10.0 Amperes KBU FEATURES .935 23.7 .895(22.7) .160(4.1) ——H .140(3.6) m - h * High Surge Current Capability * Ideal for printed circuit board
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KBU1000
KBU1010
KBU1010
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16X2
Abstract: 399B
Text: 4 T H IS D R A W IN G C O PY R IG H T IS 2 U N P U B LIS H E D . RELEASED BY 1996 AMP FOR IN C O R P O R A T E D .A LL ,1 9 9 6 P U B L IC A T IO N R IG H T S 1 D IS T LO C REVISIONS SE J RESERVED. 10. 16 12. 4 D 1- - 2,1 3 2- - 2,2- - '97 '97 REVISED
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FJ00-0096-97
J00-1335-97
FJD0-0025-03
FJD0-0120-03
FJD0-0039-03
ECR-05-006870
21/FEB
D-5200
AMP1470-19
16X2
399B
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Untitled
Abstract: No abstract text available
Text: SIEMENS LSST672 ORANGE/ORANGE LOOT672 YELLOW/YELLOW LYYT672 GREEN/GREEN LGGT672 PURE GREEN/PURE GREEN LPPT672 SUPER-RED/SUPER-RED HIGH-CURRENT SUPER SMT-MULTILED FEATURES • • • • P-LCC-4 Package White Package Optical Indicator Appropriate for High Ambient Light
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LSST672
LOOT672
LYYT672
LGGT672
LPPT672
10CFC
LGGT672-NO
LPPT672-MO
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ET 2314
Abstract: tl 8903 sc 2314
Text: HEWLETT-PACKARD/ C MP N T S blE J> • 44475A4 D0GÖ72Ö 55t. HHPA W hp\ H E W L E T T IL 'rJt PACKARD CMOS H erm etic E xtended Tem perature Range 5x7 A lphanum eric D isplays Technical Data • O n-B oard L ow P o w e r CMOS IC Integrated Shift Register with
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44475A4
MIL-D-87157
HCMS-201X
HCMS-231X/-235X
HCMS-235X
HEDS-9000,
HEDS-9100,
HEDS-9200
HEDS-8903
HEDS-5540
ET 2314
tl 8903
sc 2314
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STP8N10
Abstract: transistor BC 945
Text: fZ 7 ^ 7# S C S -T H O M S O N M e ^ lIL llC T M m iC i S T P 8 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP8N10 • . . . . . . . V dss R dS oii Id 100 V < 0.45 Q 8 A TYPICAL R ds(oii) = 0.4 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STP8N10
STP8N10
10CfC
O-220
0073M01
O-220
D0734Q2
transistor BC 945
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AMP1470-19
Abstract: No abstract text available
Text: REF 2.6 AMP MARK SERIES MARK cm : ±0 .0 s PC RECOMENDED mM: 1 . 6 ± 0 . 3 PC B O A R D H O L E P A T T E R N T O L i O . Q 5 ) PC B O A R D T H I C K N E S S : 1 . 6 ± O . B (C O N N E C TO R M O U N T SIDE) REF 1 2 .7 — 2.5X3=7.5 NOTES 2.5 - n M A T E R IA L :H O U S IN G :G L A S S FILED T H E R M O
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38/irnMIN
D-210
AMP1470-19
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smd JH transistor
Abstract: PE-64287 IN5819 SMD 120 AC to 12V AC transformer circuit diagram
Text: Semiconductor LM1578A/LM2578A/LM3578A Switching Regulator Features • Inverting and non-inverting feedback inputs ■ 1.0V reference at inputs ■ O perates from supply voltages of 2V to 40V ■ Output current up to 750 mA, saturation less than 0.9V ■ C urrent limit and therm al shut down
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LM1578A/LM2578A/LM3578A
LM1578A
LM1578Afeatures
smd JH transistor
PE-64287
IN5819 SMD
120 AC to 12V AC transformer circuit diagram
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G C O PY R IG H T IS 2 U N P U B LIS H E D . RELEASED 1996 BY AMP FOR IN C O R P O R A T E D .A LL ,1996 P U B L IC A T IO N R IG H T S LO C 1 D IS T REVISIONS SE J RESERVED. RE V I S E D C 10.1 6X 2 =20.32 'JOO V 1 0. 16 D TAB 12.4
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FJ00-1335-97
FJD0-0025-03
FJD0-0120-03
ECR-05-006870
21/FEB
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CWAA
Abstract: AD7348 AMI 8838 MAX AD7548 a0544 AD544L AD544 ADS44 I21T wiko
Text: ANALOG DEVICES LC2 M0S 8-Bit jlP Compatible 12-Bit DAC AD7548 FEATURES S-Bit Bus Compatible 12-Bit DAC All Grad«« 12-Bit Monotonie Ovar Full Temperature Ranges Oparation Spacifiad at +5V, + 12V or + 15V Power Supply Low Gain Drift of 5ppm/°C Maximum Full 4 Quadrant Multiplication
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12-Bit
AD7548
AD7548
20-Pin
P-20A)
CWAA
AD7348
AMI 8838 MAX
a0544
AD544L
AD544
ADS44
I21T
wiko
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IRFDC20
Abstract: ScansUX37
Text: PD-9.122 International k i Rectifier IRFDC2I HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements V dss ~ 600V R ns/nrrt wVw. v = 4.4£2 lD = 0.32A
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IRFDC20
ScansUX37
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SFH634s
Abstract: No abstract text available
Text: SIEMENS SFH6345 HIGH SPEED 5.3 kV OPTOCOUPLER FEATURES • • > • • • • Direct Replacement for HCPL4503 High Speed Optocoupler without Base Connection GaAIAs Emitter Integrated Detector with Photodiode and Transistor High Data Transmission Rate: 1 MBIt/s
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HCPL4503
E52744
SFH6345
SFH6345
SFH634S
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