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    10A FAST GATE TURN-OFF THYRISTOR Search Results

    10A FAST GATE TURN-OFF THYRISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    10A FAST GATE TURN-OFF THYRISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IBJT

    Abstract: SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5
    Text: Harris Semiconductor No. AN9319 Harris Power September 1993 Parallel Operation Of Insulated Gate Transistors Author: Sebald R. Korn, Consulting Applications Engineer that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but


    Original     		PDF AN9319 IBJT SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5

    IBJT

    Abstract: General Electric SCR Manual 6th edition AN9319 TA84-5 "General Electric SCR Manual" 6th Rudy Severns d50026 AN918 MOTOROLA Pelly 7402N
    Text: Parallel Operation Of Insulated Gate Transistors In the November issue of Powertechnics, the general considerations of paralleling semiconIn Application Note C + VBE IMOS RMOD g ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS


    Original     		PDF AN9319 IBJT General Electric SCR Manual 6th edition AN9319 TA84-5 "General Electric SCR Manual" 6th Rudy Severns d50026 AN918 MOTOROLA Pelly 7402N

    transistor bt 808

    Abstract: "General Electric SCR Manual" 6th BT thyristor 808 General Electric SCR Manual 6th edition IBJT General Electric SCR components Data Manual TA84-5 AN918 MOTOROLA Severns 7402N
    Text: Parallel Operation Of Insulated Gate Transistors Application Note bt raleran Of ued te antors utho eyrds ter- C IMOS rpoon, minctor, ache ergy ted, itch wer pes, wer itch - RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS


    Original     		PDF

    IBJT

    Abstract: "General Electric SCR Manual" 6th 7512 low drop ic General Electric Semiconductor General Electric SCR Manual 6th edition Rudy Severns gto 5A 500V TA84-5 AN918 Paralleling Power MOSFETs in Switching Applications D50026
    Text: Parallel Operation Of Insulated Gate Transistors Application Note C IMOS RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS e FIGURE 1. N-CHANNEL IGT TRANSISTOR STEADY STATE EQUIVALENT CIRCUIT To understand the unusual behavior of its temperature coefficient, negative at low current, almost zero at normal current,


    Original     		PDF

    GTO thyristor 4500V 4000A

    Abstract: FAST SWITCHING THYRISTOR ST GTO thyristor driver 10A fast Gate Turn-off Thyristor GTO thyristor GTO gate drive unit mitsubishi fast thyristor 200A gate control circuits GTO 4.5kv MITSUBISHI GATE TURN-OFF THYRISTOR gto gto Gate Drive circuit
    Text: IEEE Industry Applications Society Annual Meeting St. Louis, Missouri, October 12-16, 1998 A NEW GATE COMMUTATED TURN-OFF THYRISTOR AND COMPANION DIODE FOR HIGH POWER APPLICATIONS John F. Donlon*, Eric R. Motto*, M. Yamamoto*, Takahiko Iida* *Powerex, Incorporated, Youngwood, PA 15697 USA


    Original     		PDF 500V/1500A FD1500BV-90DA 500V/500A FD500JV-90DA GTO thyristor 4500V 4000A FAST SWITCHING THYRISTOR ST GTO thyristor driver 10A fast Gate Turn-off Thyristor GTO thyristor GTO gate drive unit mitsubishi fast thyristor 200A gate control circuits GTO 4.5kv MITSUBISHI GATE TURN-OFF THYRISTOR gto gto Gate Drive circuit

    power IGBT MOSFET transistor GTO SCR di

    Abstract: MOSFET IGBT THEORY AND APPLICATIONS gto thyristor driver ic Hockey Puck scr 1000a gto Gate Drive circuit gct thyristor 6 thyristor driver circuit GTO thyristor driver MITSUBISHI GATE TURN-OFF THYRISTOR scr powerex snubber capacitor
    Text: New High Power Semiconductors: High Voltage IGBTs and GCTs Eric R. Motto*, M. Yamamoto* * Powerex Inc., Youngwood, Pennsylvania, USA * Mitsubishi Electric, Power Device Division, Fukuoka, Japan Abstract: Ultra high power, high voltage, power electronics is on the verge of a new era. Two new power


    Original     		PDF

    stanag 3456

    Abstract: ac Inverter schematics 10 kw 30KW Inverter Diagram working principle of an inverter convertisseur dc ac 115v 400 hz 120 degree conduction mode of an inverter Pure sinewave inverter circuit diagram commutation techniques of scr principle block diagram 115v 400hz power single phase dual output inverter with three switch legs
    Text: APPLICATION NOTE APT9601 By: Serge Bontemps Phillipe Cussac Henry Foch Denis Grafham HIGH FREQUENCY RESONANT HALF BRIDGE MOS-Gated Power Semiconductors Configured in the ZVT Thyristor-Dual Mode Yield > 95% Converter Efficiency at 1-10 kW, When Resonantly Switched


    Original     		PDF APT9601 stanag 3456 ac Inverter schematics 10 kw 30KW Inverter Diagram working principle of an inverter convertisseur dc ac 115v 400 hz 120 degree conduction mode of an inverter Pure sinewave inverter circuit diagram commutation techniques of scr principle block diagram 115v 400hz power single phase dual output inverter with three switch legs

    reverse phase control igbt dimmer schematic

    Abstract: SCHEMATIC igbt dimmer SCHEMATIC IGNITION WITH IGBTS SCHEMATIC dimmer igbt induction lamp ballast reverse phase control igbt dimmer AN1491 Electric Welding Machine thyristor SCHEMATIC IGNITION iGBT Bipolar Static Induction Transistor
    Text: AN1491 APPLICATION NOTE IGBT BASICS M. Aleo [email protected] 1. INTRODUCTION. IGBTs (Insulated Gate Bipolar Transistors) combine the simplicity of drive and the excellent fast switching capability of the MOSFET structure with the ability to handle high current values typical of a


    Original     		PDF AN1491 1980s, 130kHz. reverse phase control igbt dimmer schematic SCHEMATIC igbt dimmer SCHEMATIC IGNITION WITH IGBTS SCHEMATIC dimmer igbt induction lamp ballast reverse phase control igbt dimmer AN1491 Electric Welding Machine thyristor SCHEMATIC IGNITION iGBT Bipolar Static Induction Transistor

    BYT12-1000

    Abstract: GTO triac power IGBT MOSFET transistor GTO SCR di IR thyristor manual IR thyristor manual ST GTO thyristor driver power IGBT MOSFET GTO SCR diode power bjt advantages and disadvantages GTO thyristor Application notes Semiconductor Group igbt
    Text: APPLICATION NOTE CHARACTERISTICS OF POWER SEMICONDUCTORS by J. M. Peter ABSTRACT Advantages and disadvantages are summarised, and the relative cost of each solution indicated. This paper aims to give a brief overview of the essential characteristics of power semiconductors,


    Original     		PDF

    GTO thyristor

    Abstract: 40A GTO thyristor GTO thyristor driver thyristor inverter circuit diagram THYRISTOR GTO GTO thyristor Application notes gto Gate Drive circuit vvvf speed control of 3 phase induction motor GTO gate drive unit Snubber circuits theory, design and application
    Text: MITSUBISHI HIGH POWER SEMICONDUCTORS MITSUBISHI HIGH POWER SEMICONDUCTORS FEATURE AND APPLICATIONAND OF GATE TURN-OFF THYRISTORS FEATURE APPLICATION OF GATE TURN-OFF THYRISTORS Gate turn-off GTO thyristors are able to not only turn on the main current but also turn it off, provided with a gate drive circuit. Unlike conventional thyristors, they have no commutation circuit, downsizing application systems while improving


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    Sprecher Schuh

    Abstract: 220 volt ac transformer less power supply 90v 110 volt ac transformer less power supply 90v SAR6-50-1 SAR6-30-3D 12 volt dc to 220 volt 3-phase 400 Hz 3000 watts slip ring motor characteristics curve normal SLIP led 3 volt SAR6-75-1 5 leg relay free
    Text: Series SAR S Solid State Relays Reliable performance for millions of operations Sprecher + Schuh’s SAR(S) line of solid state relays are the ideal solution for applications where high speed switching and long life are essential. In specific applications, solid state relays


    Original     		PDF

    triac spice model

    Abstract: SPICE thyristor model IL410 spice model schematic diagram for thyristor controls heater phototriac Spice reed relay spice model various PWM techniques for triac TRIAC RCA phototriac design solutions Phototriac zero voltage crossing
    Text: Vishay Semiconductors PHOTOTRIAC Design Solutions Basic TRIAC Characteristics A TRIAC is a subset of a family of semiconductors referred to as thyristors. These are all four-layer bipolar devices with various triggering configurations. Regardless of the specific flavor of thyristor used,


    Original     		PDF 08-Nov-04 triac spice model SPICE thyristor model IL410 spice model schematic diagram for thyristor controls heater phototriac Spice reed relay spice model various PWM techniques for triac TRIAC RCA phototriac design solutions Phototriac zero voltage crossing

    vienna rectifier

    Abstract: Zero crossing switching thyristors module three phase bridge rectifier picture S6 9A Diode Smd Cree SiC diode die single phase vienna rectifier rectifier diode 230V AC input and 230V DC output rectifier three phase 40a Cree SiC MOSFET design and of 1- vienna rectifier
    Text: Low profile power module combined with state of the art MOSFET switches and SiC diodes allows high frequency and very compact three-phase sinusoidal input rectifiers Serge Bontemps 1 , Alain Calmels(1), Simon D. Round(2), Johann W. Kolar(2) (1) Microsemi PPG power module Products, Chemin de Magret, F-33700 Merignac


    Original     		PDF F-33700 CH-8092 APEC2007) vienna rectifier Zero crossing switching thyristors module three phase bridge rectifier picture S6 9A Diode Smd Cree SiC diode die single phase vienna rectifier rectifier diode 230V AC input and 230V DC output rectifier three phase 40a Cree SiC MOSFET design and of 1- vienna rectifier

    D446

    Abstract: hp 3150 t d444 to-208ad sine wave inverter source code ST103S D444 st103
    Text: Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK D-440 To Order Previous Datasheet Index Next Data Sheet Bulletin I25183/B ST103S SERIES Stud Version INVERTER GRADE THYRISTORS Features 105A All diffused design Center amplifying gate


    Original     		PDF D-440 I25183/B ST103S ST103S -20UNF-2A O-209AC O-208AD D-445 D446 hp 3150 t d444 to-208ad sine wave inverter source code D444 st103

    INT-944

    Abstract: AN983 INT990 IRF 949 C50U IRGPC50U IRGBC40U P channel 600v 20a IGBT sec irf840 AN-983
    Text: Index AN-983 v.Int IGBT Characteristics (HEXFET is a trademark of International Rectifier) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit Conduction characteristics and “switchback” Switching characteristics


    Original     		PDF AN-983 INT-944 AN983 INT990 IRF 949 C50U IRGPC50U IRGBC40U P channel 600v 20a IGBT sec irf840 AN-983

    INT-944

    Abstract: Equivalent transistors for IRGPC50U IRF 949 AN983 all transistor IRF 310 INT-990 irgbc20u Similar 7A, 100v fast recovery diode LOW FORWARD VOLTAGE DROP DIODE RECTIFIER mosfet 10a 600v
    Text: AN-983 v.Int IGBT Characteristics (HEXFET is a trademark of International Rectifier) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit Conduction characteristics and “switchback” Switching characteristics


    Original     		PDF AN-983 1000C, INT-944 Equivalent transistors for IRGPC50U IRF 949 AN983 all transistor IRF 310 INT-990 irgbc20u Similar 7A, 100v fast recovery diode LOW FORWARD VOLTAGE DROP DIODE RECTIFIER mosfet 10a 600v

    INT-944

    Abstract: Equivalent transistors for IRGPC50U INT-990 1000C AN-983 BUX98 C50U IRF840 IRGBC20U IRGBC40S
    Text: Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET . 1 2. Silicon Structure And Equivalent Circuit . 2 3. Conduction Characteristics. 2


    Original     		PDF AN-983 055mJ/A 1000C, INT-944 Equivalent transistors for IRGPC50U INT-990 1000C AN-983 BUX98 C50U IRF840 IRGBC20U IRGBC40S

    Untitled

    Abstract: No abstract text available
    Text: Date:- 12 Aug, 2003 Data Sheet Issue:- 1 Fast Turn-off Thyristor Type P0128SH10# to P0128SH12# Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 1000-1200 V VDSM Non-repetitive peak off-state voltage, (note 1)


    Original     		PDF P0128SH10# P0128SH12#

    P0128SH

    Abstract: 100A 1000V thyristor ixys P0128SH10 100a 1000v thyristor P0128SH12 fast thyristor 200A gate control circuits P0128 300a 1000v thyristor 300A thyristor gate control circuit Westcode thyristor
    Text: Date:- 12 Aug, 2003 Data Sheet Issue:- 1 Fast Turn-off Thyristor Type P0128SH10# to P0128SH12# Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 1000-1200 V VDSM Non-repetitive peak off-state voltage, (note 1)


    Original     		PDF P0128SH10# P0128SH12# P0128SH 100A 1000V thyristor ixys P0128SH10 100a 1000v thyristor P0128SH12 fast thyristor 200A gate control circuits P0128 300a 1000v thyristor 300A thyristor gate control circuit Westcode thyristor

    Untitled

    Abstract: No abstract text available
    Text: b4E » W W • TSTMbEl GOQSSBB 433 IPRX GT300AV E R E X ■ in« POhiEREX INC Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France(43) 72.75.15 Asymmetric Gate-Turn-Off Thyristors


    OCR Scan     		PDF GT300AV BP107,

    NTE5405

    Abstract: GT 32 DIAC
    Text: N T E ELECTRON ICS INC SEE D Bi b 4 3 1 2 S ci DGOs'bSfi 4TS INTE SfcLCQN CQNTROLLE&REeB FOR PHASE CONTROL APPLICATIONS DC or Pk Votts V DRM i (t(rmS) Maximum Forward Current Amps (All Conducting Angles) 0.8A 3A Sensitive Sensitive Gate Gate 4A Sensitive Gate


    OCR Scan     		PDF NTE5480 NTE5411 NTE5400 NTE5452 NTE5453 NTE5442 NTE5470 NTE5401 NTE5402 NTE5413 NTE5405 GT 32 DIAC

    nte5455

    Abstract: nte5679 NTE5402 NTE5556 NTE5614 NTE5534 NTE5457 NTE5646 NTE5468 NTE5629
    Text: N T E ELECTRONICS INC SEE D Bi b 4 3 1 2 S ci DGOs'bSfi 4TS INTE SfcLCQN CQNTROLLE&REeB FOR PHASE CONTROL APPLICATIONS DC or Pk Votts V DRM i (t(rmS) Maximum Forward Current Amps (A ll Conducting Angles) 0.8A 3A Sensitive Sensitive Gate Gate 4A Sensitive Gate


    OCR Scan     		PDF b431SSci NTE5480 NTE5400 NTE5411 NTE5452 NTE5453 NTE5470 NTE5442 NTE5481 NTE5461 nte5455 nte5679 NTE5402 NTE5556 NTE5614 NTE5534 NTE5457 NTE5646 NTE5468 NTE5629

    GE thyristor scr SCR

    Abstract: d437 D438 IR stud SCR TSM 30 CK 1200
    Text: Bulletin 125185/B International [iq r IR e c tifie r ST083S s e r ie s INVERTER GRADE THYRISTORS Stud Version Features 85A • All diffused design ■ Center amplifying gate ■ Guaranteed high dv/dt ■ Guaranteed high di/dt ■ High surge current capability


    OCR Scan     		PDF 125185/B ST083S 13-Frequency D-438 D-439 GE thyristor scr SCR d437 D438 IR stud SCR TSM 30 CK 1200

    thyristor dk

    Abstract: No abstract text available
    Text: Bulletin 125185/B International S R ectifier ST083S SERIES Stud Version INVERTER GRADE THYRISTORS Features • All diffused design ■ C en ter am plifying gate ■ G u a ra n te e d high dv/dt ■ G u a ra n te e d high di/dt ■ High surge cu rren t capability


    OCR Scan     		PDF 125185/B ST083S ST083S D-437 D-438 D-439 thyristor dk