0120d
Abstract: No abstract text available
Text: RDRAM 512Mb 1024Kx16/18x32s Advance Information Overview The RDRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
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512Mb
1024Kx16/18x32s)
800MHz
1600MHz
625ns
DL-0205-01
0120d
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N16T1618C2A
Abstract: N16T1625C2A N16T1630C2A 1024Kx16bit
Text: NanoAmp Solutions, Inc. 1982B Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N16T1630C2 1 A N16T1625C2(1)A N16T1618C2(1)A Advance 1024Kx16bit Ultra-Low Power Asynchronous Static RAM Overview Features The N16T1630C2A, N16T1625C2A
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1982B
N16T1630C2
N16T1625C2
N16T1618C2
1024Kx16bit
N16T1630C2A,
N16T1625C2A
N16T1618C2A
N16T1625C2A
N16T1630C2A
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Untitled
Abstract: No abstract text available
Text: LY62102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.3 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION
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LY62102616
1024K
48-pin
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xxxxxxxxx
Abstract: No abstract text available
Text: LY62L102616A Rev. 1.1 16M Bits 2Mx8 / 1Mx16 Switchable LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Description Initial Issue Correct typo error on the column “UB#”, “LB#” of truth table for row “Byte Read” “Byte Write” and “Output Disable” at
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LY62L102616A
1Mx16
LY62L102616ALL-55SLT
LY62L102616ALL-55SL
LY62L102616ALL-70SLIT
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Untitled
Abstract: No abstract text available
Text: LY61L102516A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.2 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issued Added LY61L102516AGL Revised IOH/IOL = -8mA/4mA to IOH/IOL = -4mA/8mA in AC TEST CONDITIONS Lyontek Inc. reserves the rights to change the specifications and products without notice.
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LY61L102516A
1024K
LY61L102516AGL
LY61L102516AML-10
LY61L102516AML-10T
LY61L102516AML-10I
LY61L102516AML-10IT
LY61L102516AGL-10
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Untitled
Abstract: No abstract text available
Text: LY62L102516 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Rev. 1.0 Description Initial Issue Added SL Spec. Added ISB1/IDR values when TA = 25℃ and TA = 40℃ Revised FEATURES & ORDERING INFORMATION
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LY62L102516
1024K
LY62L102516GL-55SLT
LY62L102516GL-55SL
LY62L102516GL-70LLIT
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Untitled
Abstract: No abstract text available
Text: LY62L102516A 1024K x 16 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Description Initial Issue Issue Date Jan. 09. 2012 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
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LY62L102516A
1024K
LY62L102516A
216-bit
48-pin
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TK 69 TSOP
Abstract: 1024KX16 M5M4V16169RT-10 1-OF-128 7WB1 AD011 M5M4V16169TP-10
Text: MITSUBISHI LSIs TARGET SPEC REV. 2.0 M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec. and some of the contents are subject to change without notice.
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M5M4V16169RT-10
16MCDRAM
1024K-WORD
16-BIT)
1024-WORD
M5M4V16169TP
16M-bit
576-word
16-bit
TK 69 TSOP
1024KX16
1-OF-128
7WB1
AD011
M5M4V16169TP-10
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Untitled
Abstract: No abstract text available
Text: IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 LOW VOLTAGE, ULTRA LOW POWER & LOW POWER CMOS STATIC RAM KEY FEATURES • ADVANCED INFORMATION JULY 2013 DESCRIPTION High-speed access time: 45ns, 55ns. CMOS low power operation Maximum standby current: 12 A
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IS62/65WV102416DALL
IS62/65WV102416DBLL
1Mx16
IS62/65WV102416DALL)
IS62/65WV102416DBLL)
IS62/65WV102416DALL,
IS62/65WV102416DBLL
16Mbit
48pin
IS62WV102416DBLL-45TI
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Untitled
Abstract: No abstract text available
Text: IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 LOW VOLTAGE, ULTRA LOW POWER & LOW POWER CMOS STATIC RAM KEY FEATURES • ADVANCED INFORMATION JULY 2013 DESCRIPTION High-speed access time: 45ns, 55ns. CMOS low power operation Maximum standby current: 12 A
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IS62/65WV102416DALL
IS62/65WV102416DBLL
1Mx16
IS62/65WV102416DALL)
IS62/65WV102416DBLL)
IS62/65WV102416DALL,
IS62/65WV102416DBLL
16Mbit
48pin
IS62WV102416DBLL-45TI
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WS512K32V-XXX
Abstract: No abstract text available
Text: White Electronic Designs WS512K32V-XXX ADVANCED* 512Kx32 SRAM 3.3V MODULE FEATURES Access Times of 70, 85, 100, 120ns TTL Compatible Inputs and Outputs Packaging Low Voltage Operation: • 66-pin, PGA Type, 1.185 inch square, Hermetic Ceramic HIP Package 401
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WS512K32V-XXX
512Kx32
120ns
66-pin,
WS512K32V-XG2TX
WS512K32V-XHX
512Kx32;
1024Kx16
512Kx32
WS512K32V-XXX
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AS7C316098B
Abstract: No abstract text available
Text: AS7C316098B 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Confidential Description Initial Issued Issue Date June 2014 Rev1.0 – June 2014 AS7C316098B 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.0 FEATURES GENERAL DESCRIPTION
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AS7C316098B
1024K
54-pin
AS7C316098B
16M-R
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WS512K32-XXX
Abstract: smd A018
Text: WS512K32-XXX 512Kx32 SRAM MODULE, SMD 5962-94611 PRELIMINARY* FEATURES • Access Times of 70, 85, 100, 120ns ■ Commercial, Industrial and Military Temperature Ranges ■ Packaging ■ TTL Compatible Inputs and Outputs • 66-pin, PGA Type, 1.185 inch square, Hermetic
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WS512K32-XXX
512Kx32
120ns
66-pin,
04HZX
01HMX
100ns
02HMX
WS512K32-XXX
smd A018
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Untitled
Abstract: No abstract text available
Text: LY62102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 1.1 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Rev. 1.0 Rev. 1.1 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package
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LY62102616
1024K
2102616LL-55LLT
LY62102616LL-70LLT
LY62102616LL-70LLI
LY62102616LL-55LL
LY62102616LL-70LLIT
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WS512K32V-XXX
Abstract: ah55
Text: WS512K32V-XXX HI-RELIABILITY PRODUCT 512Kx32 SRAM 3.3V MODULE ADVANCED* FEATURES • Access Times of 70, 85, 100, 120ns ■ Low Voltage • 3.3V ±10% Power Supply ■ Packaging ■ Low Power CMOS • 66-pin, PGA Type, 1.185 inch square, Hermetic Ceramic HIP Package 401
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WS512K32V-XXX
512Kx32
120ns
66-pin,
WS512K32V-XG2TX
WS512K32V-XHX
512Kx32,
1024Kx16
development20
WS512K32V-XXX
ah55
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Untitled
Abstract: No abstract text available
Text: IS62/65WV102416DALL IS62/65WV102416DBLL PRELIMINARY INFORMATION FEBRUARY 2014 1Mx16 LOW VOLTAGE, ULTRA LOW POWER & LOW POWER CMOS STATIC RAM KEY FEATURES • DESCRIPTION High-speed access time: 45ns, 55ns. CMOS low power operation Maximum standby current: 12 A
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IS62/65WV102416DALL
IS62/65WV102416DBLL
1Mx16
IS62/65WV102416DALL)
IS62/65WV102416DBLL)
IS62/65WV102416DALL,
IS62/65WV102416DBLL
16Mbit
48pin
IS62WV102416DBLL-45TI
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Untitled
Abstract: No abstract text available
Text: LY62L102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.2 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION
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LY62L102616
1024K
LY62L102616
216-bit
48-pin
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xxxxxxxxx
Abstract: No abstract text available
Text: LY62L102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 1.0 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION
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LY62L102616
1024K
102616LL-70LLI
LY62L102616LL-55LLT
LY62L102616LL-55LL
LY62L102616LL-70LLIT
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Untitled
Abstract: No abstract text available
Text: WS512K32-XXX M/HITE /M ICROELECTRONICS 512Kx32 SRAM MODULE PRELIMINARY* Organized as 512Kx32, U se r C o n fig u ra b le as 1024Kx16 or 2 M x8 C o m m ercial, Industrial and M ilita r y T em peratu re R anges FEATURES TTL C o m p atib le Inputs and O utputs
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WS512K32-XXX
512Kx32
512Kx32,
1024Kx16
10HXX*
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Untitled
Abstract: No abstract text available
Text: ca WS512K32-XXX M/HITE /M IC R O E LE C TR O N IC S 512Kx32 SRAM MODULE p r e l im in a r y * • O rganized as 51 2Kx32, U se r C o n fig u ra b le as 1024Kx16 or 2M x8 ■ Co m m ercial, Industrial and M ilita r y T em peratu re R anges FEATU R ES ■ TTL C o m p atib le Inputs and O utputs
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WS512K32-XXX
512Kx32
2Kx32,
1024Kx16
120nS
66-pin,
01HXX*
100nS
02HXX*
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Untitled
Abstract: No abstract text available
Text: ça W S512K32-XXX WHITE /MICROELECTRONICS 512Kx32 SRAM MODULE, SMD 5962-94611 P R E L IM IN A R Y * FEATURES • A cce ss Times of 70, 8 5 ,1 0 0 ,120ns ■ Commercial, Industrial and Military Temperature Ranges ■ Packaging ■ TTL Compatible Inputs and Outputs
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S512K32-XXX
512Kx32
120ns
66-pin,
01HZX
100ns
02HZX
03HZX
04HZX
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Untitled
Abstract: No abstract text available
Text: a WS512K32-XXX WHITE /M ICROELECTRONICS 512Kx32 SRAM MODULE PRELIMINARY* FEATURES • A cce ss Tim es of 70, 8 5 , 1 0 0 , 120nS ■ ■ Packaging ■ TTL C o m p a tib le Inputs and O utputs • 6 6 - p i n , PGA Type, 1.385 inch square, H erm etic C eram ic HIP Package 402 , S M D N u m b e r 5962-9461 1
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WS512K32-XXX
512Kx32
120nS
04HZX
01HMX
100nS
02HMX
03HMX
04HMX
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is TARGET SPEC REV. 2.0 M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WQRD BY 16-BIT) CACHED DRAM WITH 16K (1024-WQRD BY 16-BIT) SRAM P relim in ary This document is a preliminary Target Spec, and some of the contents are subject to change without notice.
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M5M4V16169RT-10
16MCDRAM
1024K-WQRD
16-BIT)
1024-WQRD
16169TP
576-w
16-bit
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Untitled
Abstract: No abstract text available
Text: REV22 MITSUBISHI LSIs M5M4V16169RT-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16-BIT) CACHED DRAM W ITH 16K (1024-W Q RD BY 16-BIT) SRAM DESCRIPTION The M 5M 4V16169R T is a 16M-bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynamic memory array and a 1024
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REV22)
M5M4V16169RT-10
1024K
16-BIT)
024-W
4V16169R
16M-bit
576-word
16-bit
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