Untitled
Abstract: No abstract text available
Text: 1015MHz VOLTAGE CONTROLLED OSCILLATOR ACV2-100-1015 Dimensions: 0.30 x 0.30x 0.080in | | | | | | | | | | | | | | | STANDARD SPECIFICATIONS: Frequency Range Tuning Voltage Modulation Sensitivity Operates with Vtune = 0V Min Typ Max Units Cond. 1015 0.5 1033
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1015MHz
ACV2-100-1015
080in
10KHz
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advantage
Abstract: 2mAto20mA AAHS118
Text: Radiation Tolerant AAHS118 AAHS118 PRELIMINARY DATA Radiation Tolerant 14-bit Current Output DAC 50MSPS with Full Scale Current Output of 2mA to 20mA DESCRIPTION The AAHS118 is part of ASIC Advantage’s new family of Radiation Tolerant products aimed at the
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AAHS118
14-bit
50MSPS
AAHS118
advantage
2mAto20mA
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Untitled
Abstract: No abstract text available
Text: GaAs MMICs GN02019B GaAs IC with built-in ferroelectric Local amplifier for cellular phone For a mixer amplifier unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 +0.1 +0.1 M Di ain sc te on na tin nc ue e/ d 6 0.5 –0.05 ● Wide band mixer
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GN02019B
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IR 907
Abstract: MA08663
Text: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 907.50MHz Part No: MA08663 Model: TA0329A Rev No: 1 A. MAXIMUM RATING: 1. Operating Temperature: -20°C ~ +75°C
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50MHz
MA08663
TA0329A
925MHz)
240max)
IR 907
MA08663
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Untitled
Abstract: No abstract text available
Text: GaAs MMICs GN01059B GaAs IC with built-in ferroelectric Distributing amplifier unit: mm +0.2 2.8 –0.3 +0.25 +0.1 +0.1 Power supply voltage VDD 6 V Max input power Pin 3 dBm Allowable power dissipation PD 40 mW Operating ambient temperature Topr −35 to +90
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GN01059B
SC-74
100pF
1000pF
940MHz
26dBm
940MHz
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Untitled
Abstract: No abstract text available
Text: VOLTAGE CONTROLLED OSCILLATOR SURFACE MOUNT MODEL: DCSO1000-12 OPTIMIZED CENTER FREQUENCY Phase Noise VCC = +8 V Phase Noise dBc/Hz FEATURES: ► Highly Immune To Phase Hits ► Low Phase Noise (SAW Replacement) ► Tolerant To Supply Variation ► Fast Tuning
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DCSO1000-12
1000MHz/2
1015MHz/15V
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Untitled
Abstract: No abstract text available
Text: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 907.50MHz Part No: MA08663 Model: TA0329A Rev No: 1 A. MAXIMUM RATING: 1. Operating Temperature: -20°C ~ +75°C
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50MHz
MA08663
TA0329A
925MHz)
30sec.
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Untitled
Abstract: No abstract text available
Text: GaAs MMICs GN01063B GaAs IC with built-in ferroelectric Front-end IC of cellular phone +0.1 10-0.2–0.05 unit: mm 9 8 7 6 Power supply voltage Circuit current Max input power Allowable power dissipation Operating ambient temperature Storage temperature
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GN01063B
ESOF-10D
885MHz,
1015MHz)
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Untitled
Abstract: No abstract text available
Text: GaAs MMICs GN01059B GaAs IC with built-in ferroelectric Distributing amplifier unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1 Max input power Allowable power dissipation Operating ambient temperature Storage temperature 3 +0.1 +0.1 0.16–0.06 4 0.8 +0.2 2.9 –0.05
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GN01059B
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Untitled
Abstract: No abstract text available
Text: GaAs MMICs GN01059B GaAs IC with built-in ferroelectric Distributing amplifier unit: mm +0.2 +0.25 1 Unit Power supply voltage VDD 6 V Max input power Pin 3 dBm Allowable power dissipation PD 40 mW Operating ambient temperature Topr −35 to +90 °C Storage temperature
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GN01059B
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GN01063B
Abstract: No abstract text available
Text: GaAs MMICs GN01063B GaAs IC with built-in ferroelectric Front-end IC of cellular phone 1.1±0.2 2-0.55±0.1 2~12˚ Detail of Part A & B Symbol Ratings Unit Power supply voltage VDD 5 V Circuit current IDD 10 mA Max input power Pin Allowable power dissipation
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GN01063B
ESOF-10D
GN01063B
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GN02019B
Abstract: nf 820
Text: GaAs MMICs GN02019B GaAs IC with built-in ferroelectric Local amplifier for cellular phone For a mixer amplifier unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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GN02019B
GN02019B
nf 820
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GN02019B
Abstract: No abstract text available
Text: GaAs MMICs GN02019B GaAs IC with built-in ferroelectric Local amplifier for cellular phone For a mixer amplifier unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 +0.1 +0.1 6 0.5 –0.05 ● Wide band mixer ● Low consumption current
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GN02019B
100pF
1000pF
100pF
220nH
GN02019B
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Car remote keyless entry block diagram
Abstract: circuit diagram of very long range remote how to code rf transmitter Remote Keyless Entry for car TDA5200 remote keyless rf transmitter ASK receiver superheterodyne MAX1473 RF ASK receiver MODULE CIRCUIT DIAGRAM circuit diagram of rf transmitter and receiver
Text: WIRELESS, RF, AND CABLE Application Note 1773: Oct 21, 2002 Designing Remote Keyless Entry RKE Systems This application note describes how RKE systems work and ways to meet the primary design challenges, which are low power consumption, RKE transmit-receive range, and reliability.
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TDA5200
TDA5201
MAX1470
MAX1470
com/an1773
Car remote keyless entry block diagram
circuit diagram of very long range remote
how to code rf transmitter
Remote Keyless Entry for car
remote keyless rf transmitter
ASK receiver superheterodyne
MAX1473
RF ASK receiver MODULE CIRCUIT DIAGRAM
circuit diagram of rf transmitter and receiver
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zero crossing detector circuits propagation delay
Abstract: No abstract text available
Text: r r u TECHNOLOGY n m 111116 12ns, Single Supply Ground-Sensing Comparator F€flTUR€S DescRiPTion • Ultra Fast 12ns Typ ■ Operates off Single +5V Supply or ±5V ■ Input Common Mode Extends to Negative Supply ■ No Minimum Input Slew Rate Requirement
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LT1116
LT1016,
zero crossing detector circuits propagation delay
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Untitled
Abstract: No abstract text available
Text: • F o r 800MHz PDC Dual-band RF Interstage Filters SC44 Package S A F C 8 2 0 T 8 7 7 .5 M J 8 0 T I r n g 1 ,1 11»> < 7-;.Q ±0.‘ 3 Fart Number SAFC820T877.5MJ80T Pass Band Low Nominal Center Frequency (fo) (MHz) ^ 820.0 insertion Loss (dB) i ) 810—-830MHz
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800MHz
SAFC820T877
5MJ80T
-830MHz
875--895MHz
925--940MHz
960MHz
i090MHz
1300--2000MHz
828MHz)
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Untitled
Abstract: No abstract text available
Text: Resistance Weld Type UM-4, UM-5, UM-1, HC-49/T, HC-50/T, HC-49/U, HC-50/U FEATURES High frequency stability. Ideal for mobile telecommunication devices UM series . Micro processor standard clock resonator application (HC series). Excellent impact shock and vibration resistance.
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HC-49/T,
HC-50/T,
HC-49/U,
HC-50/U
200MHz
10ppm,
15ppm,
20ppm,
30ppm
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dd9L
Abstract: No abstract text available
Text: Panasonic GaAs MMICs GN01063B G aAs IC with b u ilt-in fe rro e le ctric F ro n t-e nd IC of c e llu la r pho ne • 9 Features l-chip front end Low consumption current Small ESOF-IOD package A b s o lu te M a xim u m R atings (Ta = 25°C) Parameter Symbol
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GN01063B
100pF
1000pF
100pF
3VO1000pF
dd9L
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958M
Abstract: No abstract text available
Text: Panasonic GaAs MMICs GN01059B GaAs IC with b u ilt-in fe rro e le ctric D is trib u tin g a m p lifie r • • • Features High-isolation distribution amplifier High-gain Low consumption current Small package: Mini 6pin ■ A b s o lu te M a xim u m R atings (Ta = 25°C)
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GN01059B
23dBm
1015M
958M
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Untitled
Abstract: No abstract text available
Text: we ? w. r r u v m TECHNOLOGY _ LT1116 12ns, Single Supply Ground-Sensing C om parator KRTURCS D C S C R IP T IO n • ■ ■ ■ ■ ■ The LT1116 is an ultra fast 12ns comparator designed for sensing signals near the negative supply. The input
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LT1116
LT1116
LT1016,
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Untitled
Abstract: No abstract text available
Text: Panasonic GaAs MMICs GN02019B GaAs IC with b u ilt-in fe rro e le ctric Local a m p lifie rfo r ce llu la r pho ne For a m ixe r a m p lifie r • Features Wide band mixer Low consumption current Small package: Mini 6pin ■ A b s o lu te M axim um R atin gs (Ta = 25°C)
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GN02019B
130MHz,
30dBm
1015MHz,
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