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TTM Technologies J100N50X4 RF ATTENUATOR 50OHM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	J100N50X4	Tray	1,000		1	1 $6.86 10 $5.316 100 $4.35338 1000 $3.7875 10000 $3.7875	Buy Now
Richardson RFPD	J100N50X4		1,160		1	1 $2.3 10 $2.3 100 $2.3 1000 $2.3 10000 $2.3	Buy Now
TTM Technologies I100N50X4B RF ATTENUATOR 50OHM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	I100N50X4B	Tray	1,000		1	1 $6.82 10 $5.248 100 $4.2995 1000 $3.7875 10000 $3.7875	Buy Now
Richardson RFPD	I100N50X4B		456		1	1 $7.4 10 $7.4 100 $6.64 1000 $3.98 10000 $3.98	Buy Now
TTM Technologies C100N50Z4A RF ATTENUATOR 50OHM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C100N50Z4A	Cut Tape	980		1	1 $6.31 10 $4.867 100 $3.8854 1000 $3.40724 10000 $3.40724	Buy Now
	C100N50Z4A	Digi-Reel	980		1	1 $6.31 10 $4.867 100 $3.8854 1000 $3.40724 10000 $3.40724	Buy Now
Richardson RFPD	C100N50Z4A		152		1	1 $1.44 10 $1.44 100 $1.44 1000 $1.44 10000 $1.44	Buy Now
	C100N50Z4A				1,000	1 - 10 - 100 - 1000 $2.81 10000 $2.81	Buy Now
TTM Technologies K100N50X4B RF ATTENUATOR 50OHM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	K100N50X4B	Tray	950		1	1 $8.52 10 $6.56 100 $5.37438 1000 $4.45183 10000 $4.45183	Buy Now
Richardson RFPD	K100N50X4B		750		1,000	1 - 10 - 100 - 1000 $3.98 10000 $3.98	Buy Now
TTM Technologies A100N50X4A RF ATTENUATOR 50OHM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	A100N50X4A	Bag	884		1	1 $4.26 10 $3.247 100 $2.5697 1000 $2.13394 10000 $1.9291	Buy Now
Richardson RFPD	A100N50X4A				1	1 $3.64 10 $3.64 100 $3.27 1000 $1.96 10000 $1.96	Buy Now

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100N5 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100N50TW		Anaren	RF/IF and RFID - Attenuators - RF ATTENUATOR 50OHM		Original	PDF

100N5 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Model 100N50TW Flanged Termination 100 Watts, 50Ω General Specifications Resistive Element Substrate Cover Mounting Flange Lead s : Features: • DC – 5.0 GHz • 100 Watts • AlN Ceramic • Non-Nichrome Resistive Element • Low VSWR Thick film Aluminum Nitride ceramic	Original	PDF	100N50TW QQ-N-290 MIL-E-5400.
100N50P Abstract: mosfet IXFB 100n50p IXFB100N50P 100N50 NS1250 Text: PolarHVTM HiPerFET Power MOSFET IXFB 100N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS Continuous ±30	Original	PDF	100N50P 100N50P mosfet IXFB 100n50p IXFB100N50P 100N50 NS1250
Untitled Abstract: No abstract text available Text: Model RFP-100N50TW RoHS Compliant Flanged Resistors 100 Watts, 50Ω General Specifications Resistive Element Substrate Cover Mounting flange Leads Features: • DC – 5.0 GHz • 100 Watts • Aluminum Nitride Ceramic • Non-Nichrome Resistive Element • Welded Silver Leads	Original	PDF	RFP-100N50TW QQ-N-290 MIL-E-5400. 100N50TW
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFB 100N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS	Original	PDF	100N50P PLUS264TM
100N50P Abstract: 100n50 S20NF Text: IXFL 100N50P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 500 V = 70 A Ω RDS on ≤ 52 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C	Original	PDF	100N50P ISOPLUS264TM ISOPLUS264 100N50P 100n50 S20NF
RFP-100N50TW Abstract: No abstract text available Text: RFP-100N50TW Aluminum Nitride Termination VER3/14/01 Description: RFP-100N50TW Features: o 1kHz – 5.0 GHz o 100 Watts o Aluminum Nitride AlN ceramic o Welded Silver leads o Non-Nicrome resistive element o Low VSWR o 100% Tested The RFP-100N50TW is a general purpose 100 Watt	Original	PDF	RFP-100N50TW VER3/14/01 RFP-100N50TW 700oF)
IXFN 100N50P Abstract: 100N50P IXFN100N50P sot 227b diode fast 100n50 90A49 S20NF Text: PolarHVTM HiPerFET Power MOSFET IXFN 100N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS Continuous ±30	Original	PDF	100N50P IXFN 100N50P 100N50P IXFN100N50P sot 227b diode fast 100n50 90A49 S20NF
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFN 100N50P VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	PDF	100N50P
100N50P Abstract: 100n50 Text: IXFL 100N50P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 500 V = 70 A Ω RDS on ≤ 52 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	PDF	100N50P ISOPLUS264TM 100N50P 100n50
100N50 Abstract: RFP-100N50TW RFP100N50 SN63 Text: 100 Watts, 50 Ω General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Thick film Aluminum nitride ceramic Alumina ceramic Copper, nickel plated per QQ-N-290 99.99% pure silver .005” thk Lead(s): Features • DC – 5.0 GHz Electrical Specifications	Original	PDF	QQ-N-290 RFP-100N50TW 100N50 RFP-100N50TW RFP100N50 SN63
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
MB81C68 Abstract: TMS27256 nmc27c640 free transistor equivalent book 2sc Zeropower ram MK48Z ET27160 200 watt Regulated dc Power Supply Schematic Diag itt capacitor ady10 m2764a-2fl Text: MEMORY PRODUCTS DATABOOK 1st EDITION JUNE 1988 USE IN LIFE SUPPORT MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON' PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEM WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF SGS-THOMSON	Original	PDF	Z8000 MB81C68 TMS27256 nmc27c640 free transistor equivalent book 2sc Zeropower ram MK48Z ET27160 200 watt Regulated dc Power Supply Schematic Diag itt capacitor ady10 m2764a-2fl
3 phase inverter 120 conduction mode waveform Abstract: inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter Text: Using HEXFET III in PWM Inverters for Motor Drives and UPS Systems HEXFET is a registered trademark of International Rectifier by D. Grant The PWM Inverter Introduction The advantages o f MOSFETs for high frequency pulse-width modulated (PWM) inverters and choppers for variable speed	OCR Scan	PDF	AN-967A 3 phase inverter 120 conduction mode waveform inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter

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100N5 Search Results

100N5 Price and Stock

TTM Technologies J100N50X4

TTM Technologies I100N50X4B

TTM Technologies C100N50Z4A

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TTM Technologies A100N50X4A

100N5 Datasheets (1)

100N5 Datasheets Context Search

Untitled

100N50P

Untitled

Untitled

100N50P

RFP-100N50TW

IXFN 100N50P

Untitled

100N50P

100N50

7N60B equivalent

MB81C68

3 phase inverter 120 conduction mode waveform