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    100N25P Search Results

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    100N25P Price and Stock

    Littelfuse Inc IXFH100N25P

    MOSFET N-CH 250V 100A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH100N25P Tube 438 1
    • 1 $12.23
    • 10 $12.23
    • 100 $7.83167
    • 1000 $12.23
    • 10000 $12.23
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    Newark IXFH100N25P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.47
    • 10000 $7.47
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    RS IXFH100N25P Bulk 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $11.02
    • 1000 $11.02
    • 10000 $11.02
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    Littelfuse Inc IXTQ100N25P

    MOSFET N-CH 250V 100A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTQ100N25P Tube 219 1
    • 1 $8.26
    • 10 $8.26
    • 100 $6.81167
    • 1000 $6.81167
    • 10000 $6.81167
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    Littelfuse Inc IXTK100N25P

    MOSFET N-CH 250V 100A TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTK100N25P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.48173
    • 10000 $7.48173
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    Newark IXTK100N25P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.84
    • 10000 $7.84
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    Littelfuse Inc IXTT100N25P

    MOSFET N-CH 250V 100A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTT100N25P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.68663
    • 10000 $7.68663
    		Buy Now
    Newark IXTT100N25P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $8.06
    • 10000 $8.06
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    IXYS Corporation IXTT100N25P

    MOSFETs 100 Amps 250V 0.027 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTT100N25P 686
    • 1 $13.03
    • 10 $12.25
    • 100 $10.38
    • 1000 $8.23
    • 10000 $7.68
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    TTI IXTT100N25P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.84
    • 10000 $7.69
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    New Advantage Corporation IXTT100N25P 24 1
    • 1 -
    • 10 -
    • 100 $17.68
    • 1000 $17.68
    • 10000 $17.68
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    Find more 100N25P price and stock on Findchips.com

    100N25P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    100N25P

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET IXFH 100N25P VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 100N25P O-247 100N25P

    100N25P

    Abstract: 100N25 IXTK100N25P 50A8
    Text: IXTK 100N25P IXTQ 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 100N25P 100N25P 100N25 IXTK100N25P 50A8

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXTQ 100N25P IXTK 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on = 27 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 100N25P 100N25P

    100N25P

    Abstract: No abstract text available
    Text: IXTK 100N25P IXTQ 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 100N25P 100N25P

    Untitled

    Abstract: No abstract text available
    Text: IXTQ 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on = 27 mΩ For Plasma Display Applications Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient ±20 ±30


    Original     		PDF 100N25P

    100N25P

    Abstract: No abstract text available
    Text: IXFH 100N25P PolarHTTM HiPerFET Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on = 27 mΩ ≤ 200 ns trr For Plasma Display Applications Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V


    Original     		PDF 100N25P O-247 100N25P

    100N25

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET IXFH 100N25P VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 100N25P O-247 100N25

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP