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Kyocera AVX Components 100B100FT500XT1K CAP CER 10PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B100FT500XT1K	Cut Tape	21,169		1	1 $7.1 10 $4.875 100 $3.6937 1000 $3.2134 10000 $3.2134	Buy Now
	100B100FT500XT1K	Digi-Reel	21,169		1	1 $7.1 10 $4.875 100 $3.6937 1000 $3.2134 10000 $3.2134	Buy Now
	100B100FT500XT1K	Reel	20,000		1,000	1 - 10 - 100 - 1000 $3.03769 10000 $3.03769	Buy Now
Avnet Americas	100B100FT500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B100FT500XT1K		701			1 $6.45 10 $4.88 100 $3.7 1000 $3.21 10000 $3.14	Buy Now
Richardson RFPD	100B100FT500XT1K		2,000		1,000	1 - 10 - 100 - 1000 $3.46 10000 $2.95	Buy Now
Cal-Chip Electronics GMC10CG100B100NT CAP0603 COG 10PF .1PF 100V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GMC10CG100B100NT	Reel	4,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.10014	Buy Now
	GMC10CG100B100NT	Digi-Reel	4,000		1	1 $0.46 10 $0.275 100 $0.1768 1000 $0.12484 10000 $0.12484	Buy Now
	GMC10CG100B100NT	Cut Tape	4,000		1	1 $0.46 10 $0.275 100 $0.1768 1000 $0.12484 10000 $0.12484	Buy Now
Kyocera AVX Components 100B100JT500XT1K CAP CER 10PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B100JT500XT1K	Reel	4,000		1,000	1 - 10 - 100 - 1000 $3.57624 10000 $3.43601	Buy Now
Mouser Electronics	100B100JT500XT1K		787			1 $6.19 10 $4.69 100 $3.48 1000 $2.87 10000 $2.87	Buy Now
Richardson RFPD	100B100JT500XT1K				1,000	1 - 10 - 100 - 1000 $2.7 10000 $2.4	Buy Now
iNRCORE LLC 100B-1003X TRANSFORMER 10/100BASE SINGLE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B-1003X	Tube	3,244		1	1 $21.94 10 $18.642 100 $16.895 1000 $15.92394 10000 $15.92394	Buy Now
Avnet Americas	100B-1003X	Tube	2	8 Weeks	80	1 - 10 - 100 $17.2951 1000 $17.2951 10000 $17.2951	Buy Now
Arrow Electronics	100B-1003X		720	10 Weeks	80	1 - 10 - 100 $16.689 1000 $15.287 10000 $15.287	Buy Now
Bristol Electronics	100B-1003X		40		1	1 $12 10 $9 100 $7.5 1000 $7.5 10000 $7.5	Buy Now
Quest Components	100B-1003X		32			1 $16 10 $12 100 $10.8 1000 $10.8 10000 $10.8	Buy Now

TTI	100B-1003X	Tube	4,143		1	1 $19.66 10 $19.66 100 $19.66 1000 $19.66 10000 $19.66	Buy Now
Avnet Abacus	100B-1003X		240	10 Weeks	40	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Kyocera AVX Components 100B100GT500XT1K CAP CER 10PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B100GT500XT1K	Cut Tape	3,023		1	1 $9.75 10 $6.828 100 $5.2702 1000 $4.63636 10000 $4.63636	Buy Now
	100B100GT500XT1K	Digi-Reel	3,023		1	1 $9.75 10 $6.828 100 $5.2702 1000 $4.63636 10000 $4.63636	Buy Now
	100B100GT500XT1K	Reel	2,000		1,000	1 - 10 - 100 - 1000 $4.40071 10000 $4.23697	Buy Now
Mouser Electronics	100B100GT500XT1K		2,045			1 $7.11 10 $5.44 100 $4.08 1000 $3.28 10000 $3.22	Buy Now
Richardson RFPD	100B100GT500XT1K				1,000	1 - 10 - 100 - 1000 $2.89 10000 $2.62	Buy Now

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100B100 Datasheets (40)

Part	Manufacturer	Description	Datasheet Type	PDF
100B-1001	Pulse Engineering	10/100BASE-TX SINGLE-PORT TRANSFORMER MODULESMilitary / Aerospace Grade	Original	PDF
100B-1001NL	iNRCORE	EXTMP XFMR 100BT SMG COM RPB	Original	PDF
100B-1001NL	Pulse Electronics	EXTMP XFMR 100BT SMG COM RPB	Original	PDF
100B-1001NLT	iNRCORE	EXTMP XFMR 100BT SMG COM RPB	Original	PDF
100B-1001NLT	Pulse Electronics	EXTMP XFMR 100BT SMG COM RPB	Original	PDF
100B-1001T	Pulse Engineering	10/100Base-TX Single-Port Transformer Modules Military/Aerospace Grade, Tape&Reel	Original	PDF
100B-1001X	Pulse Engineering	10/100BASE-TX SINGLE-PORT TRANSFORMER MODULESMilitary / Aerospace Grade	Original	PDF
100B-1001XNL	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM RPB	Original	PDF
100B-1001XNLT	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM RPB	Original	PDF
100B-1001XT	Pulse Engineering	10/100Base-TX Single-Port Transformer Modules Military/Aerospace Grade, Tape&Reel	Original	PDF
100B-1003	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM PBC	Original	PDF
100B-1003F	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM PBC	Original	PDF
100B-1003FNL	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - XFMR MODULE 100BT SMG COM NPB	Original	PDF
100B-1003FNLT	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM NPB	Original	PDF

100B-1003FT	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM NPB	Original	PDF
100B-1003FX	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM NPB	Original	PDF
100B-1003FXNL	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM NPB	Original	PDF
100B-1003FXNLT	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM NPB	Original	PDF
100B-1003FXT	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM NPB	Original	PDF
100B-1003NL	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM NPB	Original	PDF

100B100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor 7350 Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496 Text: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19060E Hz--1990 AGR19060E DS04-159RFPP DS04-078RFPP) transistor 7350 agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A j496
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	PDF	MRF9080 MRF9080LR3 MRF9080LSR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	PDF	MRF9100 MRF9100R3 MRF9100SR3 MRF9100R3
MRF9030MBR1 Abstract: MRF9030MR1 100B7R5JP Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 MRF9030MBR1 100B7R5JP
AGR09030GUM Abstract: JESD22-C101A RF35 Text: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030GUM Hz--895 AGR09030GUM DS04-246RFPP PB04-094RFPP) JESD22-C101A RF35
Z9 TRANSISTOR SMD Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8 Text: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18045E AGR18045E DS03-186RFPP Z9 TRANSISTOR SMD JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8
C1206C104KRAC7800 Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW
RF-35-0300 Abstract: A04T-5 93F2975 A113 MRF9060MBR1 MRF9060MR1 100B470JP 100B100JP 44F3360 Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9060M/D MRF9060MR1 MRF9060MBR1 RF-35-0300 A04T-5 93F2975 A113 MRF9060MBR1 100B470JP 100B100JP 44F3360
330 j73 Tantalum Capacitor Abstract: j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1 Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest	Original	PDF	MW4IC001MR4 MW4IC001NR4 MW4IC001 MW4IC001NR4 330 j73 Tantalum Capacitor j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1
Untitled Abstract: No abstract text available Text: MW4IC915 Freescale Semiconductor Rev. 6, 5/2006 Replaced by MW4IC915NBR1 GNBR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations. ARCHIVE INFORMATION	Original	PDF	MW4IC915 MW4IC915NBR1 MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1
MRF21085 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21085LR3 MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21085 MRF21085LR3 MRF21085LSR3 MRF21085LR3 MRF21085
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors	Original	PDF	MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1
MRF6S19120H Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF6S19120H Rev. 0, 2/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3

100B0R5BW Abstract: MW4IC2020NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW4IC2020 Rev. 7, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020 wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage	Original	PDF	MW4IC2020 MW4IC2020NBR1 MW4IC2020GNBR1 MW4IC2020MBR1 MW4IC2020GMBR1 MW4IC2020 100B0R5BW
j340 motorola make Abstract: MRF21085 Text: Freescale Semiconductor Technical Data MRF21085 Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085R3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF21085 MRF21085R3 MRF21085LSR3 j340 motorola make
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier	Original	PDF	MRF284 MRF284LR1 MRF284LSR1
Untitled Abstract: No abstract text available Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	PDF	MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1
RF-35-0300 Abstract: MRF9060 MRF9060LSR1 MRF9060R1 MRF9060S MRF9060L Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9060/D MRF9060R1 MRF9060LSR1 MRF9060R1 RF-35-0300 MRF9060 MRF9060LSR1 MRF9060S MRF9060L
MRF19085 Abstract: CDR33BX104AKWS GX-0300-55-22 MRF19085LSR3 MRF19085R3 MRF19085SR3 100B5R1 Text: MOTOROLA Order this document by MRF19085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	PDF	MRF19085/D MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 MRF19085 MRF19085R3 MRF19085SR3 CDR33BX104AKWS GX-0300-55-22 MRF19085LSR3 100B5R1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5P20180HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	PDF	MRF5P20180HR6
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S19100LR3 and MRF5S19100LSR3 replaced by MRF5S19100HR3 and MRF5S19100HSR3. H suffix indicates lower thermal resistance package. The RF MOSFET Line	Original	PDF	MRF5S19100L/D MRF5S19100LR3 MRF5S19100LSR3 MRF5S19100HR3 MRF5S19100HSR3. MRF5S19100LR3 MRF5S19100LSR3
tl249 Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242 Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PDF	PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242
465B Abstract: CDR33BX104AKWS MRF19125 MRF19125S MRF19125SR3 Text: MOTOROLA Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19125 MRF19125S MRF19125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	PDF	MRF19125/D MRF19125 MRF19125S MRF19125SR3 MRF19125 MRF19125S 465B CDR33BX104AKWS MRF19125SR3

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100B100 Price and Stock

Kyocera AVX Components 100B100FT500XT1K

Cal-Chip Electronics GMC10CG100B100NT

Kyocera AVX Components 100B100JT500XT1K

iNRCORE LLC 100B-1003X

Kyocera AVX Components 100B100GT500XT1K

100B100 Datasheets (40)

100B100 Datasheets Context Search

transistor 7350

Untitled

Untitled

MRF9030MBR1

AGR09030GUM

Z9 TRANSISTOR SMD

C1206C104KRAC7800

RF-35-0300

330 j73 Tantalum Capacitor

Untitled

MRF21085

Untitled

Untitled

MRF6S19120H

100B0R5BW

j340 motorola make

Untitled

Untitled

RF-35-0300

MRF19085

Untitled

Untitled

tl249

465B