Untitled
Abstract: No abstract text available
Text: BLC8G27LS-100AV Power LDMOS transistor Rev. 1 — 25 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2490 MHz to 2690 MHz.
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BLC8G27LS-100AV
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PQFP-100
Abstract: PRQP0100JE-B
Text: JEITA Package Code P-QFP100-14x20-0.65 RENESAS Code PRQP0100JE-B Previous Code FP-100A/FP-100AV MASS[Typ.] 1.7g NOTE 1. DIMENSIONS"*1"AND"*2" DO NOT INCLUDE MOLD FLASH 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. HD *1 D 80 51 81 50 bp c c1 HE Reference
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P-QFP100-14x20-0
PRQP0100JE-B
FP-100A/FP-100AV
FP100-14x20-0
PQFP-100
PRQP0100JE-B
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ BCX53 SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V THRU FM1200-M Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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OT-89
OD-123+
BCX53
FM120-M+
FM1200-M
OD-123H
060TYP
118TYP
FM180-MH
FM1100-MH
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Untitled
Abstract: No abstract text available
Text: PD -94335 IRF1407S IRF1407L Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Advanced HEXFET Power MOSFETs from International
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IRF1407S
IRF1407L
100AV
EIA-418.
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irf1407
Abstract: ed 78A AN-994 IRF1407L IRF1407S
Text: PD -94335 IRF1407S IRF1407L Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Advanced HEXFET Power MOSFETs from International
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IRF1407S
IRF1407L
100AV
EIA-418.
irf1407
ed 78A
AN-994
IRF1407L
IRF1407S
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iso 7816-3
Abstract: ST16-19 ST19 ST19SF64
Text: ST19SF64 CMOS MCU BASED SAFEGUARDED SMART CARD IC WITH 64 KBytes EEPROM PRODUCT PREVIEW 8 BIT ARCHITECTURE CPU • 32 KBytes of USER ROM WITH PARTITIONING ■ SYSTEM ROM FOR LIBRARIES ■ 960 Bytes of RAM WITH PARTITIONING ■ 64 KBytes of EEPROM WITH PARTITIONING
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ST19SF64
ST16-19
ST19SF64
100AV1
iso 7816-3
ST16-19
ST19
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DIODE marking ED 78A
Abstract: ED 78A IRF140 AN-994 IRF1407L IRF1407S irf1407
Text: PD -94335 IRF1407S IRF1407L Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Advanced HEXFET Power MOSFETs from International
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IRF1407S
IRF1407L
100AV
EIA-418.
DIODE marking ED 78A
ED 78A
IRF140
AN-994
IRF1407L
IRF1407S
irf1407
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Untitled
Abstract: No abstract text available
Text: MINIATURE FLUSH DIAPHRAGM PRESSURE TRANSDUCER ⁄2-20 UNF PRESSURE CONNECTION 1 PX61V Series mV/V Output 0-50 to 0-15,000 psi 0-3 to 0-1,000 bar Model PX61V1-200GV 6.3 .25 17 (.65) 10.7 (.422) DIA 1/2-20 UNF-2A ߜ Miniature Flush Diaphragm ߜ Hermetically Sealed
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PX61V
PX61V1-200GV
PX61V[
-10KGV
DP41-S,
DP25-S
-15KGV
DP25-S*
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ta8601bn
Abstract: ta8601 23P100 23A50 P46C 23m500 C20N TA8601B MAXIAU
Text: TOSHIBA Unit: TENTATIVE VIDEO-CHROMA-DEFLECT ION SYSTEM FOR A COLOR TELEVISION NTSC mm Z The TA8601BN combines the Video-Chroma sub system and the Deflection stage on a single monolithic integrated circuit to provide a Color Television Video-Chroma-Deflection systea.
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TA8601BN
TA8601BN
ta8601
23P100
23A50
P46C
23m500
C20N
TA8601B
MAXIAU
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204D
Abstract: 213B
Text: CONNOR WINFELD am THE CONNOR-WINFIELD CORP. 2111 COMPREHENSIVE DRIVE. AURORA, IL 60505. FAX 630 851-5040. PHONE (630)851-4722. WWW.CONWIN.COM PRODUCT DATA SHEET CRYSTAL CONTROLLED OSCILLATORS ^STRATUM 3E HCMOS VCOCXO ABSOLUTE MAXIMUM RATINGS P A R A M E TE R
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700mm
635mm
762mm
810mm
178mm
400mm
814mm
890mm
780mm
Cx057
204D
213B
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transistor bc 138
Abstract: No abstract text available
Text: SONY CXA3048R 8-channel Read/Write Amplifier for MR-Ind Head Hard Disk Drive Description The CXA3048R is a Read/Write amplifier for MRInd Magneto Resistive-Inductive heads used in hard disk drives, and is capable of supporting up to eight channels. Features
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CXA3048R
CXA3048R
52PIN
LQFP-52P-L081
LQFP052-P-1010
transistor bc 138
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GE rcrt
Abstract: ov8d AY 5 3500
Text: L A 7 b 7 U : features & runcuuus [V IF ] * PLL type video d etecto r fo r the high p ictu re & sound q u a lity * High gain V IF amp Pre-amp unnecessary * High speed ACC * B u ilt in APC tim e constant SW [S IF ] * Audio IN/OUT a t same time * Yideo/Audio sim u ltan eojs muting, or audio-only muting possible
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734KHz
GE rcrt
ov8d
AY 5 3500
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Untitled
Abstract: No abstract text available
Text: •I 43 02 27 1 0 Q S 3 7 b l 35fl ■ HAS 2N6788 Jg HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T0-205A F BOTTOM VIEW • 6.0 A , 1 0 0V • rD S on = 0 - 3 0 n • S O A is P o w er-D issip atio n Lim ited
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2N6788
T0-205A
LH0Q63
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me12n06el
Abstract: Nihon Inter Electronics me12n06
Text: CATALOG No NIEC-009 SINCE 1957 N IE C Industry Leader Power Semiconductor ME12N06EL ME12N06EL-F Power MOSFET Logic Level N-Channel Logic Level 12 Amperes 60 Volts RDS on = 0.18 Ohms FEATURES: • Fast Sw itching • Low D rive R equirem ents to Interface
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NIEC-009
ME12N06EL
ME12N06EL-F
360mm
EIA-481
TE16F2
ME12N06EL-F
Nihon Inter Electronics
me12n06
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E78996 Diode
Abstract: IRKEL240-24S30 IRKEL IRKEL56
Text: Power Modules International S Ü Rectifier Diode, Fast Part Number >FSIt 8 >F(AV) @ Tc Vrrm (V) IRKEL56/04S02 IRKEL56/06S02 400 600 IRKEL56/04S05 IRKEL56/06S05 IRKEL56/08S05 IRKEL56/10S05 400 600 800 1000 IRKEL56/04S10 IRKEL56/06S10 IRKEL56/08S10 IRKEL56/10S10
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IRKEL56/04S02
IRKEL56/06S02
IRKEL56/04S05
IRKEL56/06S05
IRKEL56/08S05
IRKEL56/10S05
IRKEL56/04S10
IRKEL56/06S10
IRKEL56/08S10
IRKEL56/10S10
E78996 Diode
IRKEL240-24S30
IRKEL
IRKEL56
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IRL621
Abstract: No abstract text available
Text: N-CHANNEL LOGIC LEVEL MOSFET IRL620/IRL621 FEATURES • • • • • • • • Lower Rds ON Excellent voltage stability Fast switching speeds Rugged polyslllcon gate cell structure Lower Input capacitance Extended safe operating area Improved high temperature reliability
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IRL620/IRL621
O-220
IRL620
IRL621
IRL621
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Untitled
Abstract: No abstract text available
Text: SONY CXA3081R 4-channel Read/Write Amplifier for MR-Ind Head Hard Disk Drive Description The CXA3081R is a Read/Write amplifier for MRInd Magneto Resistive-Inductive heads used in hard disk drives, and is capable of supporting up to four channels. Features
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CXA3081R
CXA3081R
52PIN
XA3081R
LQFP0S2-P-1010
A3fl23fl3
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IRL540
Abstract: IRL541
Text: N-CHANNEL LOGIC LEVEL MOSFETS IRL540/541 FEATURES • • • • • • • Lower R d s i o n Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRL540/541
O-220
IRL540
IRL541
-tj-25Â
tj--50Â
7Tb4142
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Untitled
Abstract: No abstract text available
Text: j p j -0 p p Q I j Q p Q I Provisional Data Sheet No. PD-9.432B I O R Rectifier JANTX2N6800 HEXFET POWER MOSFET JANTXV2N6800 [REF:MIL-PRF-19500/557] [GENERIC:IRFF330] N-CHANNEL 400 Volt, 1.0Q HEXFET Product Summan1 Part Number BV dss HEXFET technology is the key to International
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JANTX2N6800
JANTXV2N6800
MIL-PRF-19500/557]
IRFF330]
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7MB1100N-060
Abstract: p607 7MBI100 7mb1100n QMA INVERTER 7MBI100N-060 EW-500
Text: FUJI 7MBI100N-060 7 in 1 IGBT 600 V 100 A IGBT MODULE N series } n Features • Including Brake Chopper n Absolute Maximum Ratings ( t c=25 °c n Symbols Items Collector-Emitter Voltage Gate -Emitter Voltage <D tí 0> > c Outline Drawing V ges lc Collector Current
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0005L31
7MB1100N-060
p607
7MBI100
7mb1100n
QMA INVERTER
7MBI100N-060
EW-500
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CXA1554N
Abstract: CAPACITOR 0.01103
Text: CXA1554N SONY Read/Write Amplifier 4ch. for Hard Disk Drive Description The CXA1554N is a Read/Write Amplifier lor the ferrite head of hard disk drives, is designed to handle up to 4-channel heads. Features •Operates on +5V, single power supply. • Low power consumption. Read: 90mW/Write:
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CXA1554N
CXA1554N
90mW/Write:
130mW
24pin
300mil
CAPACITOR 0.01103
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