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Kyocera AVX Components 100A101JP150XT MLC A/B/R - Custom Tape W/Leader (Alt: 100A101JP150XT)
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Avnet Americas	100A101JP150XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100A101JP150XT					1 $3.66 10 $2.82 100 $2.19 1000 $1.71 10000 $1.71	Get Quote
TTI	100A101JP150XT	Reel	1,000		500	1 - 10 - 100 - 1000 $2.18 10000 $2.18	Buy Now
Richardson RFPD	100A101JP150XT				500	1 - 10 - 100 - 1000 $1.55 10000 $1.39	Buy Now
Kyocera AVX Components 100A101JP150XC100 MLC A/B/R - Waffle Pack (Alt: 100A101JP150XC100)
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Avnet Americas	100A101JP150XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100A101JP150XC100					1 $4.65 10 $4 100 $3 1000 $2.6 10000 $2.6	Get Quote
TTI	100A101JP150XC100	WAFL			100	1 - 10 - 100 $2.97 1000 $2.45 10000 $2.45	Buy Now
Richardson RFPD	100A101JP150XC100				200	1 - 10 - 100 - 1000 $1.52 10000 $1.36	Buy Now
Kyocera AVX Components 100A101JP150XTV MLC A/B/R - Custom Tape W/Leader (Alt: 100A101JP150XTV)
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Avnet Americas	100A101JP150XTV	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100A101JP150XTV					1 - 10 - 100 - 1000 $1.73 10000 $1.66	Get Quote
TTI	100A101JP150XTV	Reel			500	1 - 10 - 100 - 1000 $1.71 10000 $1.61	Buy Now
Richardson RFPD	100A101JP150XTV				1,000	1 - 10 - 100 - 1000 $1.55 10000 $1.39	Buy Now
Kyocera AVX Components 100A101JP150XT1K MLC A/B/R - Custom Tape W/Leader (Alt: 100A101JP150XT1K)
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Avnet Americas	100A101JP150XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100A101JP150XT1K					1 - 10 - 100 - 1000 $1.59 10000 $1.5	Get Quote
Richardson RFPD	100A101JP150XT1K				1,000	1 - 10 - 100 - 1000 $1.55 10000 $1.39	Buy Now
Kyocera AVX Components 100A101JPN150XC100 Silicon RF Capacitors / Thin Film 150V 100pF Tol 5% Las Mkg
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Mouser Electronics	100A101JPN150XC100					1 $4.86 10 $4.19 100 $3.13 1000 $2.52 10000 $2.48	Get Quote

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100A101JP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100A101JP150XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505		Original	PDF

100A101JP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 replaced by MRFG35005ANT1. MRFG35005NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35005N MRFG35005NT1 MRFG35005ANT1. MRFG35005NT1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRFG35005MT1 MRFG35005NT1.
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class	Original	PDF	MRFG35010MT1 MRFG35010NT1 MRFG35010MT1
13009 TRANSISTOR equivalent Abstract: D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT Freescale Semiconductor, Inc. RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to	Original	PDF	MRFG35030R5/D MRFG35030R5 13009 TRANSISTOR equivalent D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent
marking 0619 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35005MT1 MRFG35005MT1 marking 0619
8772 P Abstract: motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies	Original	PDF	MRFG35003MT1/D MRFG35003MT1 8772 P motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor
RF FET TRANSISTOR 3 GHZ Abstract: A113 MRFG35003NT1 Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 4, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35003N MRFG35003NT1 RF FET TRANSISTOR 3 GHZ A113 MRFG35003NT1
6 017 03 61 Abstract: A113 MRFG35010MT1 MRFG35010NT1 D55342M07 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRFG35010MT1 MRFG35010NT1. 6 017 03 61 A113 MRFG35010MT1 MRFG35010NT1 D55342M07
Marking Z7 Gate Driver Abstract: MRFG35005MT1 A113 MRFG35005NT1 Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRFG35005MT1 MRFG35005NT1. Marking Z7 Gate Driver MRFG35005MT1 A113 MRFG35005NT1
A113 Abstract: MRFG35005MT1 MRFG35005NT1 Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 2, 5/2005 Gallium Arsenide PHEMT MRFG35005NT1 MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35005MT1 MRFG35005NT1 MRFG35005NT1 A113 MRFG35005MT1
ATC 1184 Abstract: A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814 Text: MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35005MT1/D MRFG35005MT1 ATC 1184 A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814
Untitled Abstract: No abstract text available Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	PDF	RDMRFG35003MT1BWA MRFG35003MT1
transistor std 13007 Abstract: ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class	Original	PDF	MRFG35010N MRFG35010NT1 transistor std 13007 ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2
Untitled Abstract: No abstract text available Text: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	PDF	MRFG35003MT1 MRFG35003MT1 RDMRFG35003MT1BWA

transistor std 13007 Abstract: 0944 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class	Original	PDF	MRFG35010N MRFG35010NT1 MRFG35010N transistor std 13007 0944
transistor on 4959 Abstract: GT5040 Text: Document Number: MRFG35002N6 Rev. 0, 2/2006 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35002N6 MRFG35002N6T1 MRFG35002N6 transistor on 4959 GT5040
ma 8630 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35003MT1 Rev. 2, 6/2005 Gallium Arsenide PHEMT MRFG35003NT1 MRFG35003MT1 RF Power Field Effect Transistors Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class	Original	PDF	MRFG35003MT1 MRFG35003NT1 MRFG35003MT1 ma 8630
100A100JP150X Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class	Original	PDF	MRFG35010MT1 MRFG35010NT1 MRFG35010MT1 100A100JP150X
Untitled Abstract: No abstract text available Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data MRFG35002N6T1 replaced by MRFG35002N6AT1. Gallium Arsenide PHEMT MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35002N6 MRFG35002N6T1 MRFG35002N6AT1. MRFG35002N6T1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35010AN MRFG35010ANT1
A113 Abstract: MRFG35005ANT1 MRFG35005NT1 MM 5058 Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35005N MRFG35005NT1 A113 MRFG35005ANT1 MRFG35005NT1 MM 5058
Marking Z7 Gate Driver Abstract: A113 MRFG35003ANT1 MRFG35003NT1 transistor 8772 TC 8644 Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 5, 1/2008 MRFG35003NT1 replaced by MRFG35003ANT1. MRFG35003NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35003N MRFG35003NT1 MRFG35003ANT1. MRFG35003NT1 Marking Z7 Gate Driver A113 MRFG35003ANT1 transistor 8772 TC 8644
6 017 03 61 Abstract: A113 MRFG35010ANT1 MRFG35010NT1 Z16C20 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,	Original	PDF	MRFG35010N MRFG35010NT1 MRFG35010ANT1. MRFG35010NT1 6 017 03 61 A113 MRFG35010ANT1 Z16C20
TRIMMER capacitor 160 pF Abstract: transistor BC337 TRIMMER capacitor 10-40 pf 22 pf trimmer capacitor 1n4007 mttf linear amplifier 470-860 Zener diode 9.1 470-860 mhz Power amplifier 5 w capacitor c3b TPV5055B Text: MOTOROLA SC XSTRS/R F b3L7254 O I D Q W fc^E J> 037 HOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Lin ear P o w er TVansistor . . . d e sig n e d fo r o u tp u t sta g e s in B and IV & V T V tra n sm itte r am plifiers. Internal m a tc h in g o f b o th in p u t a nd o u tp u t a lo n g w ith u se o f a p u s h -p u ll p a c k a g e	OCR Scan	PDF	b3t72SM 100A101JP50 1N4007 BC337 BD135 TPV5055B TRIMMER capacitor 160 pF transistor BC337 TRIMMER capacitor 10-40 pf 22 pf trimmer capacitor 1n4007 mttf linear amplifier 470-860 Zener diode 9.1 470-860 mhz Power amplifier 5 w capacitor c3b TPV5055B

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Kyocera AVX Components 100A101JP150XT

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100A101JP Datasheets (1)

100A101JP Datasheets Context Search

Untitled

Untitled

Untitled

13009 TRANSISTOR equivalent

marking 0619

8772 P

RF FET TRANSISTOR 3 GHZ

6 017 03 61

Marking Z7 Gate Driver

A113

ATC 1184

Untitled

transistor std 13007

Untitled

transistor std 13007

transistor on 4959

ma 8630

100A100JP150X

Untitled

Untitled

A113

Marking Z7 Gate Driver

6 017 03 61

TRIMMER capacitor 160 pF