w19b320
Abstract: No abstract text available
Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W19B320AT/B
w19b320
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Product Preview Xtrinsic Battery Sensor The MM9Z1_638 is a fully integrated Battery monitoring device. The device supports precise current measurement via an external shunt resistor. It features four voltage measurement via an internal calibrated resistor divider or use of an external
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638D1
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DL322
Abstract: DL323 DL324
Text: PRELIMINARY Am41DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features
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Am41DL32x4G
16-Bit)
8-Bit/256
73-Ball
FLB073--73-Ball
DL322
DL323
DL324
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CA 324G
Abstract: DL322 DL323 DL324
Text: PRELIMINARY Am42DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features SOFTWARE FEATURES
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Am42DL32x4G
16-Bit)
73-Ball
CA 324G
DL322
DL323
DL324
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A29L320ATV-70F
Abstract: 48pin flash programmer circuit 48pin TSOP A29L320ATV A29L320AUV-70UF A29L320ATV-70UF A29L320AUG-70F A29L320A
Text: A29L320A Series 4M X 8 Bit / 2M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Document Title 4M X 8 Bit / 2M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History Issue Date Remark 0.0 Initial issue April 12, 2006
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A29L320A
48TFBGA)
A29L320ATV-70F
48pin flash programmer circuit
48pin TSOP
A29L320ATV
A29L320AUV-70UF
A29L320ATV-70UF
A29L320AUG-70F
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AMD marking CODE flash AM29DL323DB
Abstract: AM29DL32XD 56-Pin S29JL032 DL322 DL323 DL324 S29JL032H S29PL032J
Text: Am29DL322D/323D/324D Data Sheet This product has been retired and is not available for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL32xD and is the factory-recommended migration path. Please refer to the S29JL032H Datasheet for specifications and ordering information.
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Am29DL322D/323D/324D
S29JL032H
Am29DL32xD
S29PL032J
AMD marking CODE flash AM29DL323DB
56-Pin
S29JL032
DL322
DL323
DL324
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Untitled
Abstract: No abstract text available
Text: 19-2331; Rev 1; 9/03 3V/5V, 10-Bit, Serial Voltage-Output Dual DACs with Internal Reference The MAX5232/MAX5233 low-power, dual 10-bit voltageoutput digital-to-analog converters DACs feature an internal 10ppm/°C precision bandgap voltage reference and precision output amplifiers. The MAX5233 operates
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10-Bit,
MAX5232/MAX5233
10-bit
10ppm/
MAX5233
MAX5232
fAX5233
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asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
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S29GL-M
S29GL256MS29GL128MS29GL064MS29GL032M
S29GL128MS29GL128N
S29GL256MS29GL256N
S29GLxxxN
00-B-5
S29GL032M
LAA064
asme SA388
gl128m
A2113
S29GL256
E78000
S29GL128N
TSOP56 S29GL128N
sa32sa35
S29GLxxxM
BGA-63
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DS42553
Abstract: No abstract text available
Text: DS42553 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL323D Top Boot 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS
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DS42553
Am29DL323D
16-Bit)
73-Ball
DS42553
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DL322
Abstract: DL323 DL324 M41000002R
Text: Am41DL32x8G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am41DL32x8G
DL322
DL323
DL324
M41000002R
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DL322
Abstract: DL323 DL324
Text: Am49DL32xBG Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am49DL32xBG
DL322
DL323
DL324
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E1210
Abstract: JT-G704 JT-G703 JT-G706 MT9072 MT9072AB MT9072AV PUB43801 PCM24 Y230
Text: MT9072 Octal T1/E1/J1 Framer Data Sheet Features • • • • • • • October 2004 Eight fully independent, T1/E1/J1 framers 3.3 V supply with 5 V tolerant inputs Selectable 2.048 Mbit/s or 8.192 Mbit/s serial buses for both data and signaling Framing Modes:
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MT9072
IEEE-1149
MT9072AB
MT9072AV
MT9072
E1210
JT-G704
JT-G703
JT-G706
MT9072AB
MT9072AV
PUB43801
PCM24
Y230
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FT609
Abstract: controlling of automatic stepper motor bipolar l293 194 stepper controller EdeFT609 Stepping L293 and unipolar stepper motor Stepping Motors diagram 6 pin unipolar stepper motor 5V unipolar STEPPER MOTOR TRANSISTOR DRIVER
Text: EdeFT609 Preliminary Datasheet General Description: The FT609 provides a new simple way of controlling Stepper Motors. Stepper motors have traditionally been favored because of their exact positioning characteristics, but the electronics required to drive them has always been
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EdeFT609
FT609
controlling of automatic stepper motor bipolar
l293
194 stepper controller
Stepping
L293 and unipolar stepper motor
Stepping Motors diagram
6 pin unipolar stepper motor
5V unipolar STEPPER MOTOR TRANSISTOR DRIVER
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TRF960
Abstract: N1001 BSN6030 TRF9600 bsn6040 BSN6020 TRF96001
Text: TRF96001 2.4ĆGHz RF TRANSCEIVER SWRS007 – AUGUST 2001 GQE PACKAGE Features D Integrated 2.4-GHz Frequency Hopping D D D D D D D D D Spread Spectrum FHSS RF Transceiver TX Amplifier With Gain Control and Ramping Single Digital Line Interface In-Phase/
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TRF96001
SWRS007
TRF960
N1001
BSN6030
TRF9600
bsn6040
BSN6020
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UPD6252
Abstract: u10121E IC-3411 thermistor SCK 054 uPD780001 uPD78002 PD780024 PD78002Y upd78f0924 PD78014
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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d-588-6130
UPD6252
u10121E
IC-3411
thermistor SCK 054
uPD780001
uPD78002
PD780024
PD78002Y
upd78f0924
PD78014
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Untitled
Abstract: No abstract text available
Text: MT9072 Octal T1/E1/J1 Framer Advance Information DS5063 Features • • Eight fully independent, T1/E1/J1 framers 3.3V supply with 5V tolerant inputs • Selectable 2.048 Mbit/s or 8.192 Mbit/s serial buses for both data and signaling • • Framing Modes:
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MT9072
DS5063
IEEE-1149
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Untitled
Abstract: No abstract text available
Text: MT9072 Octal T1/E1/J1 Framer Advance Information Features • • • • • • • DS5063 Eight fully independent, T1/E1/J1 framers 3.3V supply with 5V tolerant inputs Selectable 2.048 Mbit/s or 8.192 Mbit/s serial buses for both data and signaling Framing Modes:
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MT9072
DS5063
IEEE-1149
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K8P3215UQB
Abstract: K8P2815 K8p3215 K8P3215U k8p2815u K8P32 48FBGA samsung nor flash Samsung MCP K8P6415
Text: K8P3215UQB FLASH MEMORY 32Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8P3215UQB
10MAX
48FBGA
48-PIN
1220F
047MAX
K8P3215UQB
K8P2815
K8p3215
K8P3215U
k8p2815u
K8P32
samsung nor flash
Samsung MCP
K8P6415
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Untitled
Abstract: No abstract text available
Text: S29JL032H 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory S29JL032H Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,
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S29JL032H
16-Bit)
S29JL032H
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L323C
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile
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Am29DL32xC
16-Bit)
29DL32xC
L323C
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siemens ts 4140
Abstract: slma PEB2040 TS01S HSCC "digital switching system" TI344
Text: SIEMENS Memory Time Switch CMOS MTSC PEB 2045 PEF 2045 Preliminary Data 1 CMOS IC Features • Time/space switch for 2048-, 4096- or 8192-kbit/s PCM systems • Switching of up to 512 incoming PCM channels to up to 256 outgoing PCM channels • 16-input and 8-output PCM lines
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8192-kbit/s
16-input
8192-kHz
2048-kHz
0235b05
P-DIP-40
siemens ts 4140
slma
PEB2040
TS01S
HSCC
"digital switching system"
TI344
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NL1031
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 8 8 3 0 L 8M-BIT Rambus DRAM 1M-WORD X 8-BIT X 1-BANK Description The 8-Megabit Ram bus DRAM RD R A M ™ is an extremely-high-speed C M O S DRAM organized as 1M w ords by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Ram bus Signaling
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IPD48830L
P32G6-65A
NL1031
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD488170L 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK Description The 18-Megabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w o rds by 9 bits and capable o f bursting up to 256 bytes of data at 2 ns per byte. The use o f Rambus S ignaling
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PD488170L
18M-BIT
18-Megabit
P32G6-65A
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