AN7254
Abstract: AN7260 HGTG20N100D2 G20N100D2
Text: HGTG20N100D2 20A, 1000V N-Channel IGBT May 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time 520ns GATE • High Input Impedance • Low Conduction Loss COLLECTOR BOTTOM SIDE METAL Description
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HGTG20N100D2
O-247
520ns
HGTG20N100D2
150oC.
AN7254
AN7260
G20N100D2
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G20N100D2
Abstract: AN7254 AN7260 HGTG20N100D2
Text: HGTG20N100D2 S E M I C O N D U C T O R 20A, 1000V N-Channel IGBT May 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time 520ns GATE • High Input Impedance • Low Conduction Loss COLLECTOR
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HGTG20N100D2
O-247
520ns
HGTG20N100D2
150oC.
G20N100D2
AN7254
AN7260
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Untitled
Abstract: No abstract text available
Text: APTM100DA40T1G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction
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APTM100DA40T1G
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APTM100DA40T1G
Abstract: APT0406 APT0502
Text: APTM100DA40T1G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction
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APTM100DA40T1G
APTM100DA40T1G
APT0406
APT0502
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APT0406
Abstract: APT0502 APTM100SK40T1G Thermistor 100,000 cycle mosfet 16a 800v
Text: APTM100SK40T1G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application • • Q1 7 AC and DC motor control Switched Mode Power Supplies Features 8 NTC 3 4 • CR2 1 2 • • • 12 Power MOS 8 MOSFETs
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APTM100SK40T1G
APT0406
APT0502
APTM100SK40T1G
Thermistor 100,000 cycle
mosfet 16a 800v
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Untitled
Abstract: No abstract text available
Text: APTM100SK40T1G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application • • Q1 7 AC and DC motor control Switched Mode Power Supplies Features 8 NTC 3 4 • CR2 1 2 • • • 12 Power MOS 8 MOSFETs
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APTM100SK40T1G
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Untitled
Abstract: No abstract text available
Text: IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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IRG7PG35UPbF
IRG7PG35U-EPbF
O-247AC
O-247AD
IRG7PG35UPbF/IRG7PG35U-EPbF
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Untitled
Abstract: No abstract text available
Text: PD-94305E IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast Speed Operation 8KHz - 40KHz, > 200KHz in Resonent Mode • High Operating Frequency
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PD-94305E
IRG4MC40U
40KHz,
200KHz
O-254AA.
MIL-PRF-19500
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TRANSISTOR BIPOLAR 400V 20A
Abstract: No abstract text available
Text: PD - 95428A IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: optimized for high operating frequencies 8-40 KHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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5428A
IRG4BC40UPbF
O-220AB
O-220AB
4BC40UPbF
TRANSISTOR BIPOLAR 400V 20A
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Untitled
Abstract: No abstract text available
Text: PD-94305F IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast Speed Operation 8KHz - 40KHz, > 200KHz in Resonent Mode • High Operating Frequency
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PD-94305F
IRG4MC40U
40KHz,
200KHz
RectifierO-254AA.
MIL-PRF-19500
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TRANSISTOR BIPOLAR 400V 20A
Abstract: mosfet 20a 300v N CHANNEL MOSFET 10A 1000V IRG4MC40U 960V 1000V 20A transistor
Text: PD-94305F IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast Speed Operation 8KHz - 40KHz, > 200KHz in Resonent Mode • High Operating Frequency
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PD-94305F
IRG4MC40U
40KHz,
200KHz
-254AA.
MIL-PRF-19500
TRANSISTOR BIPOLAR 400V 20A
mosfet 20a 300v
N CHANNEL MOSFET 10A 1000V
IRG4MC40U
960V
1000V 20A transistor
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Untitled
Abstract: No abstract text available
Text: PD - 95428A IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: optimized for high operating frequencies 8-40 KHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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5428A
IRG4BC40UPbF
O-220AB
O-220AB
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1000A diode
Abstract: 1000V 20A transistor E80276 QM1000HA-2HB transistor VCE 1000V QM10
Text: MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM1000HA-2HB • • • • • IC Collector current . 1000A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750
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QM1000HA-2HB
E80276
E80271
47MAX.
1000A diode
1000V 20A transistor
E80276
QM1000HA-2HB
transistor VCE 1000V
QM10
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B20N300C VCES = 3000V IC110 = 20A VCE sat 6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C
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MMIX1B20N300C
IC110
20N300C
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Untitled
Abstract: No abstract text available
Text: PD - 95429A IRG4BC40WPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter
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5429A
IRG4BC40WPbF
150KHz
O-220AB
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G20N100D2
Abstract: GE 639 transistor 901 u 620 tg g20n100 443 20N TSC-1000
Text: S m HGTG20N100D2 a r r ì 20A, 1000V N-Channel IGBT M ay 1995 Features Package • 34 A, 1000V JEDEC STYLE TO-247 EMfTTER • Latch Free Operation • Typical Fall Time 520ns • High Input Impedance • Low Conduction Loss Description The HG TG 20N 100D 2 is a MOS gated high voltage switching
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HGTG20N100D2
O-247
520ns
G20N100D2
GE 639 transistor
901 u 620 tg
g20n100
443 20N
TSC-1000
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wf vqe 24 d
Abstract: AN7254 AN7260 HGTG20N100D2 transistor c90 wx2 transistor
Text: HARRIS SEIUCOND SECTOR bflE D 33 HARRIS HGTG20N100D2 S E M I C O N D U C T O R 4302271 Ü0SD21D bOT HAS 20A, 1000V N-Channel IGBT December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 34 Amp, 1000 Volt • Latch Free Operation ^EMITTER • Typical Fall Time 520ns
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0SD21D
TG20N10OD2
520ns
HGTG20N100D2
wf vqe 24 d
AN7254
AN7260
transistor c90
wx2 transistor
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Untitled
Abstract: No abstract text available
Text: m H A R R IS S E M I C O N D U C T O R HGTG20N100D2 20A, 1000V N-Channel IGBT December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 34 Am p, 1000 Volt • Latch Free Operation • Typical Fall Tim e 520ns • High Input Im pedance • Low C onduction Loss
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HGTG20N100D2
O-247
520ns
HGTG20N100D2
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buw13a philips semiconductor
Abstract: BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V
Text: BSE J> N AUER PHILIPS/DISCRETE • bbS3T31 001bE21 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. TYPE NO. PACKAGE OUTLINE •cfDOt1) 6A v CE(*at) MAX. at lc/lB t ft y p a tlc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V
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bki53T31
BUT18
BUT18A
O-220AB
180ns
BUT18F
BUT18AF
OT-186
BUT12
buw13a philips semiconductor
BUT22A
BUT228
BUP23A
SOT93
BUT18 PHILIPS SEMICONDUCTOR
mje13008
SOT-93
bus13 philips
transistor VCE 1000V
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buw13a philips semiconductor
Abstract: 180NS mje13008 BUS12 BUS12A BUT12 BUT12A BUT18 BUS13 BUT18AF
Text: N AUER PHILIPS/DISCRETEL ESE D • bbS HÌBl 001b521 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4A/0.8A 180ns at 4A
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S3T31
BUT18
O-220AB
180ns
BUT18A
BUT18F
OT-186
BUT18AF
BUT12
buw13a philips semiconductor
mje13008
BUS12
BUS12A
BUT12A
BUS13
BUT18AF
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE, BSE D • QOlbEEl fl ■ T~3 I Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1,5V at 4A /0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4 A /0.8A 180ns at 4A
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180ns
OT-93
400ns
BUV298AV
BUV298V
OT-227B1
-220AB
BUT18F
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TRANSISTOR BIPOLAR 400V 20A
Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .
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HGTD6N40E1,
HGTD6N40E1S,
HGTD6N50E1,
HGTD6N50E1S
HGTP6N40E1D,
HGTP6N50E1D
HGTP10N40C1,
HGTH12N40C1,
HGTP10N40C1D,
HGTP10N40E1D,
TRANSISTOR BIPOLAR 400V 20A
igbt 1000v 10A
P-Channel IGBT
igbt 500V 15A
igbt 40A 600V
P-CHANNEL 400V 15A
N channel 600v 20a IGBT
igbt 400V 40A
igbt 400V 20A
400V P-Channel IGBT
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igbt 400V 20A
Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
Text: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .
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HGTD6N40E1,
HGTD6N50E1,
HGTD10N40F1,
HGTD10N50F1,
HGTH12N40C1,
HGTM12N40C1,
HGTP10N40C1,
HGTM12N60D1
HGTP12N60D1
HGTH20N40C1,
igbt 400V 20A
igbt 500V 15A
diode 500v 10A
diode 10a 400v
20A 500v igbt
igbt 1000v 10A
igbt 1200V 20A
DIODE 20A
igbt 400V 5A
current sensing 400V
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BU2506DF
Abstract: 1500v 02xs t199 5A 800V BU508
Text: 42 Power Devices High Speed, High Voltage Transistors in order of current rating (cont.) Package Outline V CE (sat) tf typ at lc lC(DC)<1> V CES V CEO max. at Iq/I b (Inductive Load) BUT12 BUT12A TO-220AB 8A 850V 1000V 400V 450V 1.5V at 6A/1.2A 1.5V at 5A/1 A
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BUT12
BUT12A
O-220AB
OT-93
OT-199
OT-186A
OT-227B1
OT-227B1
200ns
BU2506DF
1500v
02xs
t199
5A 800V
BU508
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