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    1000A DIODE Search Results

    1000A DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    1000A DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CLAMP METER-TRMS 1000A AC/DC CALIB Industrial Clamp Meter Cat No: CMI-100-C UPC No: 783310076315 Description • • • • • High capacity 1000A AC/DC amperage measurement 600V AC/DC voltage, frequency, and resistance measurements for maximum versatility


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    PDF CMI-100-C 9999For TC-55

    AC INRUSH CURRENT 1000A LIMITER

    Abstract: KLH Series littelfuse l50s L15S L25S L50S L60S L70S LR29862 UL 248-14
    Text: Next Semiconductor Fuses 150/250/500/600/700 VAC • Very Fast-Acting ■ 1 – 1000 Amperes SPECIFICATIONS Voltage Ratings: L15S: 150 V AC/DC 1 – 60A 150 VAC (70 – 1000A) 100 VDC (70 – 1000A) L25S: 250 V AC/DC (1 – 200A) 250 VAC (225 – 800A) 200 VDC (225 – 800A)


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    PDF VAC/450VDC 700VAC/650VDC E71611 LR29862 001/LHR AC INRUSH CURRENT 1000A LIMITER KLH Series littelfuse l50s L15S L25S L50S L60S L70S LR29862 UL 248-14

    littelfuse l50s

    Abstract: l13s L15S L25S L50S L60S L70S LR29862 KlA 511 L25S125
    Text: Semiconductor Fuses 150/250/500/600/700 VAC • Very Fast-Acting ■ 1 – 1000 Amperes SPECIFICATIONS Voltage Ratings: L15S: 150 V AC/DC 1 – 60A 150 VAC (70 – 1000A) 100 VDC (70 – 1000A) L25S: 250 V AC/DC (1 – 200A) 250 VAC (225 – 800A) 200 VDC (225 – 800A)


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    PDF VAC/450VDC 700VAC/650VDC E71611 LR29862 littelfuse l50s l13s L15S L25S L50S L60S L70S LR29862 KlA 511 L25S125

    L15S

    Abstract: L25S L50S L60S L70S l13s L15S1000
    Text: Semiconductor Fuses 150/250/500/600/700 VAC • Very Fast-Acting ■ 1 – 1000 Amperes SPECIFICATIONS Voltage Ratings: L15S: 150 V AC/DC 1 – 60A 150 VAC (70 – 1000A) 100 VDC (70 – 1000A) L25S: 250 V AC/DC (1 – 200A) 250 VAC (225 – 800A) 200 VDC (225 – 800A)


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    PDF VAC/450VDC 700VAC/650VDC E71611) LR29862-99) L15S L25S L50S L60S L70S l13s L15S1000

    IGBT 1000A

    Abstract: 1000v 1000a CM1000DU-34NF OF IGBT 1000A 1000V 12v to 1000v inverters circuit diagrams CM1000DU CM1000DU34NF
    Text: MITSUBISHI IGBT MODULES CM1000DU-34NF HIGH POWER SWITCHING USE CM1000DU-34NF ● IC . 1000A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack


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    PDF CM1000DU-34NF IGBT 1000A 1000v 1000a CM1000DU-34NF OF IGBT 1000A 1000V 12v to 1000v inverters circuit diagrams CM1000DU CM1000DU34NF

    OF IGBT 1000A 1000V

    Abstract: CM1000DU-34NF 1000v 1000a CM1000DU igbt module mitsubishi
    Text: MITSUBISHI IGBT MODULES CM1000DU-34NF HIGH POWER SWITCHING USE CM1000DU-34NF ● IC . 1000A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack


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    PDF CM1000DU-34NF OF IGBT 1000A 1000V CM1000DU-34NF 1000v 1000a CM1000DU igbt module mitsubishi

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD500S65K3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


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    PDF DD500S65K3

    fz500r65ke3

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ500R65KE3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe


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    PDF FZ500R65KE3 Isolationseigenschaftenvon10 fz500r65ke3

    IRF 930

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD500S65K3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe


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    PDF DD500S65K3 Isolationseigenschaftenvon10 60yprovideapplicationnotes. IRF 930

    DIODE 24B

    Abstract: E80276 QM1000HA-24B 1000A diode QM10
    Text: MITSUBISHI TRANSISTOR MODULES QM1000HA-24B HIGH POWER SWITCHING USE INSULATED TYPE QM1000HA-24B • • • • • IC Collector current . 1000A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 750


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    PDF QM1000HA-24B E80276 E80271 47MAX. DIODE 24B E80276 QM1000HA-24B 1000A diode QM10

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FD500R65KE3-K hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Chopper-Anwendungen • Mittelspannungsantriebe • Traktionsumrichter


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    PDF FD500R65KE3-K

    1000A diode

    Abstract: 1000V 20A transistor E80276 QM1000HA-2HB transistor VCE 1000V QM10
    Text: MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM1000HA-2HB • • • • • IC Collector current . 1000A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750


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    PDF QM1000HA-2HB E80276 E80271 47MAX. 1000A diode 1000V 20A transistor E80276 QM1000HA-2HB transistor VCE 1000V QM10

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD500S65K3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


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    PDF DD500S65K3

    A643

    Abstract: 155 607 30 A643CM A643CN A643CS A643CT A643DA A643DB A643DC A643DD
    Text: A643 40mm RECTIFIER DIODE 4400V / 1000A SPCO The A643 rectifier diode features a nominal 40mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.


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    PDF 160degC A643DD A643DC A643DB A643DA A643DP A643CT A643CN A643CS A643CM A643 155 607 30 A643CM A643CN A643CS A643CT A643DA A643DB A643DC A643DD

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD500S33HE3 IHM-BModul IHM-Bmodule VCES = 3300V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe • Traktionsumrichter • USV-Systeme


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    PDF DD500S33HE3

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I2014 02/05 300HF.L SERIES STANDARD RECOVERY DIODES "Lead-Free" Stud Version Features IF = 300A VF typ = 1.0 V @ 1000A TJ max Diffused glass passivate die Popular series for rough service Stud cathode and stud anode version High surge capability


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    PDF I2014 300HF. 300HF DO-205AB 08-Mar-07

    L Series

    Abstract: No abstract text available
    Text: Bulletin I2014 02/05 300HF.L SERIES STANDARD RECOVERY DIODES "Lead-Free" Stud Version Features IF = 300A VF typ = 1.0 V @ 1000A TJ max Diffused glass passivate die Popular series for rough service Stud cathode and stud anode version High surge capability


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    PDF I2014 300HF. 300HF DO-205AB L Series

    D4MB

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL Data sheet status Preliminary specification date of issue March 1991 Sfc.E D • 711Qfl2b □ D4 Mb bti 17T « P H I N BUK 476-1000A/B PowerMOS transistor Replaces BUK446-1000A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


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    PDF 711Qfl2b 76-1000A/B BUK446-1000A/B BUK476 -1000A -1000B -SOT186A T-39-09 BUK476-1000A/B 7110fi2b D4MB

    L1047

    Abstract: No abstract text available
    Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FH-56 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD1000FH-56 OUTLINE DRAWING Dimensions in mm Average forward current. . 1000A • V r r m Repetitive peak reverse voltage. . 2500V, 2800V


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    PDF FD1000FH-56 L1047

    3 phase 7.5 hp induction motor winding diagram

    Abstract: speed control of 1 phase induction motor by using scr speed control of 3 phase induction motor by using scr 3 phase 7.5 hp induction motor winding 1 HP SINGLE PHASE induction motor capacitor start capacitor run 1 HP SINGLE PHASE 1 HP SINGLE PHASE induction motor speed control m TRIAC 1000A circuit diagram capacitor as a power saver ac induction motor of 5 hp
    Text: H HV-1000/1000A a r r is O Û O /1 0 0 0 A UUUM ¡2 H V -1 Induction Motor Energy Saver DESCRIPTION • O P E R A T E S D IR E C T L Y O F F 120V/240V A C L IN E NO POWER S U P P L Y R E Q U IR E D The H V-1000 and H V -1000A are energy saving, induction •


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    PDF 20V/240V -1000/1000A HV-1000/1OOOA 1000/1000A 3 phase 7.5 hp induction motor winding diagram speed control of 1 phase induction motor by using scr speed control of 3 phase induction motor by using scr 3 phase 7.5 hp induction motor winding 1 HP SINGLE PHASE induction motor capacitor start capacitor run 1 HP SINGLE PHASE 1 HP SINGLE PHASE induction motor speed control m TRIAC 1000A circuit diagram capacitor as a power saver ac induction motor of 5 hp

    RECTIFIER DIODE 1000A schottky

    Abstract: No abstract text available
    Text: Gì SGS-IHOMSON m DTV32-1000A MTV32-600A CRT HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER & MODULATION DIODES For complete specifications refer to "SCHOTTKY RECTIFIER DIODES" MAIN PRODUCTS CHARACTERISTICS MTV32 DTV32 IF peak 3A VRRM trr 600V 3A 1000V 50ns 1.6V


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    PDF MTV32 DTV32 DTV32-1000A MTV32-600A D027A RECTIFIER DIODE 1000A schottky

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FH-56 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FH-56 • lF AV Average forw ard c u rre n t. . 1000A • V rrm Repetitive peak reverse voltage. . 2500V, 2800V


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    PDF FD1000FH-56 1000jiC

    D027A

    Abstract: DIODE 1000a diode 628 1000A diode DTV32-1000A 1000v 3a diode 113 DTV32 MTV32-600A mtv32 switching DIODE 1000A
    Text: DTV32-1000A MTV32-600A / ^ 7 SGS-THOMSON CRT HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER & MODULATION DIODES MAIN PRODUCTS CHARACTERISTICS MTV32 DTV32 If peak 3A 3A Vr r m 600V 1000V trr 50ns 70ns Vf 1.6V 1.6V FEATURES • PRODUCTS SPECIFIC TO HORIZONTAL DE­


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    PDF DTV32-1000A MTV32-600A MTV32 DTV32 D027A 09x/p2x 7T2T237 DTV32-1000A DIODE 1000a diode 628 1000A diode 1000v 3a diode 113 DTV32 MTV32-600A switching DIODE 1000A

    100EXG11

    Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
    Text: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26


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    PDF SG2500EX24 SG3000EX24 SG4000EX26 SG2000R24 SG2000U24 SG2000W24 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 100EXG11 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v