D 400 2200 E
Abstract: SKET400
Text: VRSM VRRM VDRM dv/dt cr ITRMS (maximum values for continuous operation) 600 A 700 A V V V/µs 900 1300 1500 1700 1900 2100 2300 800 1200 1400 1600 1800 2000 2200 500 1000 1000 1000 1000 1000 1000 ITAV (sin. 180; Tcase = . . .) 380 A (68 °C) 440 A (78 °C)
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SKET 14
Abstract: C440
Text: VRSM VRRM VDRM dv/dt cr ITRMS (maximum values for continuous operation) 600 A 700 A V V V/µs 900 1300 1500 1700 1900 2100 2300 800 1200 1400 1600 1800 2000 2200 500 1000 1000 1000 1000 1000 1000 ITAV (sin. 180; Tcase = . . .) 380 A (68 °C) 440 A (78 °C)
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THYRISTOR SKKT 131/08D
Abstract: semikron skkh 161 semipack skkt 161 semikron skkt 161/12 semikron skkt 131 semikron skkh 131 semikron skkt 161/12E semikron skkh 380 semikron skkt 131/16 THYRISTOR SKKT 131/12E
Text: VRSM VRRM dv/ VDRM dt cr V 900 1300 1300 1500 1700 1900 2100 2300 V V/µs 800 500 1200 500 1200 1000 1400 1000 1600 1000 1800 1000 2000 1000 2200 1000 ITRMS (maximum values for continuous operation) 240 A 270 A 240 A 270 A ITAV (sin. 180; Tcase = . . .) 150 A (85 °C) 172 A (81 °C) 150 A (85 °C) 172 A (81 °C)
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Untitled
Abstract: No abstract text available
Text: VRSM VRRM dv/dt cr ITRMS (maximum values for continuous operation) VDRM 195 A SEMIPACK 2 Thyristor / Diode Modules ITAV (sin. 180; Tcase = 85 °C) V V V/µs 900 1300 1500 1700 1900 800 1200 1400 1600 1800 500 1000 1000 1000 1000 SKKT 122 SKKH 122 128 A
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LB 122
Abstract: SKKT 162/16E SEMIKRON semikron skkt 122/ 16/ E skkt 122/16 semikron skMt 132 semipack skkt 250 LB 122 transistor semikron skkt 122/ 18/ E semikron skkt 132/ 14/ E semikron skkt 162/ 12
Text: VRSM VRRM dv/dt cr ITRMS (maximum values for continuous operation) VDRM 195 A SEMIPACK 2 Thyristor / Diode Modules ITAV (sin. 180; Tcase = 85 °C) V V V/µs 900 1300 1500 1700 1900 800 1200 1400 1600 1800 500 1000 1000 1000 1000 SKKT 122 SKKH 122 128 A
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC90 VCE SAT 1.5 A
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2N100
2N100A
O-220
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skt semikron
Abstract: semikron skt 16/12E semikron skt 24 semikron skt 900 skt 450 skt 25 semikron semikron skt 400 semikron skt 500 semikron skt semikron skt 50
Text: VRSM VRRM VDRM dvdt V 500 700 900 1100 1300 V 400 600 800 1000 1200 1500 1700 1400 1600 V/µs 500 500 500 500 500 1000 1000 1000 cr ITRMS (maximum values for continuous operation) 30 A 40 A 50 A ITAV (sin. 180; Tcase = . . . °C) 19 A (95 °C) 25 A (74 °C)
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Abstract: No abstract text available
Text: VRS VRRM dv/ ITRMS (maximum values for continuous operation VDRM dt)cr 920 A V V V/µs 585 A 900 1300 1500 1700 1900 800 1200 1400 1600 1800 500 1000 1000 1000 1000 SKKT 500/08 D SKKT 500/12 E SKKT 500/14 E SKKT 500/16 E SKKT 500/18 E SEMIPACK 5 Thyristor Modules
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E63532
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semikron skkt 500/14
Abstract: dc to ac inverter by thyristor skkt 1000 skkt 90 / 12 skkt 90
Text: VRS VRRM dv/ ITRMS (maximum values for continuous operation VDRM dt)cr 920 A V V V/µs 585 A 900 1300 1500 1700 1900 800 1200 1400 1600 1800 500 1000 1000 1000 1000 SKKT 500/08 D SKKT 500/12 E SKKT 500/14 E SKKT 500/16 E SKKT 500/18 E SEMIPACK 5 Thyristor Modules
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E63532
semikron skkt 500/14
dc to ac inverter by thyristor
skkt 1000
skkt 90 / 12
skkt 90
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SKT 2700
Abstract: semikron skt 10 C5250
Text: VRSM VRRM dv/dt cr ITRMS (maximum values for continuous operation) VDRM 2300 A SKT 1000 SKT 1200 ITAV (sin. 180; Tcase = . . .; DSC) V V V/µs 1465 A (58 °C) 1780 A (55 °C) 500 400 500 SKT 1000/04 D SKT 1200/04 D 900 1300 800 1200 500 1000 SKT 1000/08 D
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IXGP2N100
Abstract: IXGP2N100A 2N100 IXYS 2N100A
Text: High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 4 A I C90 TC = 90°C
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2N100
2N100A
O-220
IXGP2N100A
IXGP2N100
IXGP2N100
IXGP2N100A
IXYS
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Untitled
Abstract: No abstract text available
Text: VCES High Voltage IGBT IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 4 A I C90 TC = 90°C 2 A ICM TC = 25°C, 1 ms
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2N100
2N100A
O-220
IXGP2N100A
IXGP2N100
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semikron skkt 130
Abstract: 12 bsz
Text: SKKT 500, SKKH 500 VRS VRRM dv/ VDRM dt cr ITRMS (maximum values for continuous operation) 920 A V V V/µs ITAV (sin. 180; Tcase = 80 °C) 585 A 900 1300 1500 1700 1900 800 1200 1400 1600 1800 500 1000 1000 1000 1000 SKKT 500/08 D SKKT 500/12 E SKKT 500/14 E
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SKKT500
xls-10
semikron skkt 130
12 bsz
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skt 2500 semikron
Abstract: skt 2500 f skt 2500 din 41814 semikron skt 520 semikron skt 24 41814 semikron semikron skt 600 semikron skt 760
Text: VRSM VRRM VDRM dv/dt cr ITRMS (maximum values for continuous operation) 1400 A V V V/µs ITAV (sin. 180; Tcase = 55 °C; DSC) 780 A 1900 1800 1000 SKT 520/18 E 2100 1000 SKT 520/20 E 2300 2000 2200 1000 SKT 520/22 E 2500 2400 1000 SKT 520/24 E 2900 2800
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O-200
skt 2500 semikron
skt 2500 f
skt 2500
din 41814
semikron skt 520
semikron skt 24
41814
semikron
semikron skt 600
semikron skt 760
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skt 2500 semikron
Abstract: skt 2500 f skt 2500 semikron skt 24 52020E semikron skt 520
Text: VRSM VRRM VDRM dv dt cr ITRMS maximum values for continuous operation 1400 A Thyristors SKT 520 ITAV (sin. 180; Tcase = 55 °C; DSC) V V V/µs 780 A 1900 1800 1000 SKT 520/18 E 2100 2000 1000 SKT 520/20 E 2300 2200 1000 SKT 520/22 E 2500
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520/24E
A/500
skt 2500 semikron
skt 2500 f
skt 2500
semikron skt 24
52020E
semikron skt 520
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SKMT250
Abstract: SKKL D2101-2 SKKT250 SKKL250 semikron thyristor skkt 800 skkt250/16ge SKKT250/SKMT2501
Text: SEMIKRON V rsm V rrm dv/ V drm dt cr V V Itav (sin. 18C Tease = . . •) V/|iS 220 A (88 °C) 260 A (82 °C) 220 A (88 °C) 260 A (82 °C) 900 800 500 1300 1200 500 1300 1200 1000 1500 1400 1000 1700 1600 1000 1900 1800 1000 2100 2000 1000 2300 2200 1000
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SKKT210
SKMT2501'
SKKH210
Tamb0597
SKKT250
KT21010
fll3hb71
SKKL250
SKMT250
SKMT250
SKKL
D2101-2
SKKL250
semikron thyristor skkt 800
skkt250/16ge
SKKT250/SKMT2501
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thyristor tt 330 n
Abstract: thyristor skkt162 A23i thyristor tt 330 thyristor TT 18 N thyristor tt 162 n 12
Text: s e MIKRDN dv/dt « Itrms (maximum values for continuous operation) 600 A 700 A Vrsm Vrrm V drm V V V/ns 900 1300 1500 1700 1900 2100 2300 800 1200 1400 1600 1800 2000 2200 500 1000 1000 1000 1000 1000 1000 180; (Tease ~ . . .) Sin. Itsm Tvj = Tvj = Tvj =
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SKET330
SKKE400
SKKT132,
SKKT162
SKKD162
thyristor tt 330 n
thyristor skkt162
A23i
thyristor tt 330
thyristor TT 18 N
thyristor tt 162 n 12
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Untitled
Abstract: No abstract text available
Text: 5 EM IK R 0 N V rsm Itrm s m axim um values tor continuous operation V rrm f - i V drm 1400 A It a v SKT 520 (sin. 180; Tease = 55 °C; DSC) V V/|is 1900 1800 1000 SKT 520/18 E 2100 2000 1000 SKT 520/20 E V 780 A 2300 2200 1000 SKT 520/22 E 2500 2400 1000
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520/24E
A13bLi71
A13bb71i
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semikron skkt 19 120
Abstract: No abstract text available
Text: m fil3bb?l □DQ33Ô1 ÛOM M S E K G 51E D SEMIKRDN SEMIKRON INC V rsm V rrm dv/ V drm dt cr V Itrm s (m axim um values for continuous operation) 240 A | V/|1S 1 50 A (8 5 °C) V 90 0 800 13 00 1200 50 0 500 1000 1500 1400 1000 1700 1600 1000 19 00 1800 1000
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ai3bb71
00033fib
SKKL131,
SKKL161
semikron skkt 19 120
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Untitled
Abstract: No abstract text available
Text: SEMIKRON V rrm dv/ V drm d t c r V V V/|xs 900 1300 1500 1700 1900 800 1200 1400 1600 1800 500 1000 1000 1000 1000 V rs It r m s 920 A Ita v (sin - 180; T oase = 80 °C) It a v SKKT SKKT SKKT SKKT SKKT I RMS It s m i2t T oase = 85 °C Tease = 8 9 ° C Id
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E63532
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SKW1000
Abstract: No abstract text available
Text: V drm V rsm V rrm Irm s 1 Volw = 4l/min,Tw = 40 °C, ED = 50 %, n = 10) V 1700 A 1900 A 1200 SKW 1000/12 SKW 1200/12 1400 SKW 1000/14 SKW 1200/14 1600 SKW 1000/16 SKW 1200/16 Symbol Conditions I r m s 1) It s m ft SKW 1000 II Vt Tvj = 25°C; V t it o ) T Vj
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SKW1000
0000A
00V/us
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Untitled
Abstract: No abstract text available
Text: SEMIKRDN V rsM V rrm V drm V -dt ÌJcr Ithms (maximum values for continuous operation 3000 A I 5000 A Itav (sin. 180; T case — . . . ; D SC) 1500 A (55 °C) 2450 A (55 °C) V V 2300 2200 1000 2700 2600 1000 SKT 1400/26 E SKT 2000/26 E 2900 2800 1000 SKT 1400/28 E
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fll3bb71
B3-59
fll3bb71
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skt 2500 semikron
Abstract: B344 semikron skt 24 SKT520 SKT600 SKT760 T2520 B342 d Scans-00144241
Text: S1E P Ö13bb71 DD03SD0 477 • SEK G SEMIKRDN SEMIKRON INC V rsm V rrm V drm fV -dt1JcT Itrms m axim um values for continuous operation 1400 A SKT 520 V V V/(is 780 A 1900 1800 1000 SKT 520/18 E 2100 2000 1000 SKT 520/20 E 2300 2200 1000 SKT 520/22 E 2500
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fll3bb71
DD03SD0
520/24E
A/500
l3bb71
00Q3S03
T-25-20
SKT600
SKT760
CaseB10
skt 2500 semikron
B344
semikron skt 24
SKT520
SKT760
T2520
B342 d
Scans-00144241
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Untitled
Abstract: No abstract text available
Text: s e m ik r d n fll3bt.71 GOOS'm 732 • V rsm V rrm V drm W er V V V/|is 500 700 900 1300 1500 1700 400 600 800 1200 1400 1600 500 500 500 1000 1000 1000 Itrm s maximum values for continuous operation 220 A | 280 A Itav (sin. 180; case = . . . °C) 140 A (80 °C)
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A13bb71
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