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    1.5W POWER TRANSISTOR Search Results

    1.5W POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1.5W POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZXTP25020CFFTA

    Abstract: TS16949 ZXTP25020CFF 079w marking 1F4
    Text: ZXTP25020CFF 20V, SOT23F, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4.5A RCE(sat) = 41m⍀ VCE(sat) < -65mV @ 1A PD = 1.5W Description C Advanced process capability and packaging maximise the power handling and performance of this small outline transistor. The reverse


    Original     		PDF ZXTP25020CFF OT23F, -65mV OT23F D-81541 ZXTP25020CFFTA TS16949 ZXTP25020CFF 079w marking 1F4

    pseudomorphic HEMT

    Abstract: FPD2250 MIL-HDBK-263 InP transistor HEMT
    Text: FPD2250 FPD22501.5W Power pHEMT 1.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx2250μm Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed gate structure minimizes


    Original     		PDF FPD2250 FPD22501 FPD2250 25mx2250m 32dBm 12GHz 42dBm FPD2250-000 pseudomorphic HEMT MIL-HDBK-263 InP transistor HEMT

    Untitled

    Abstract: No abstract text available
    Text: ZXTP25020CFF 20V, SOT23F, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4.5A RCE(sat) = 41m⍀ VCE(sat) < -65mV @ 1A PD = 1.5W Description C Advanced process capability and packaging maximise the power handling and performance of this small outline transistor. The reverse


    Original     		PDF ZXTP25020CFF OT23F, -65mV OT23F D-81541

    FPD2250

    Abstract: PAD130
    Text: FPD2250 Datasheet v3.0 1.5W POWER PHEMT LAYOUT: FEATURES: • • • • 32 dBm Linear Output Power at 12 GHz 7.5 dB Power Gain at 12 GHz 42 dBm Output IP3 45% Power-Added Efficiency GENERAL DESCRIPTION: The FPD2250 is an AlGaAs/InGaAs pseudomorphic High


    Original     		PDF FPD2250 FPD2250 22-A114. MIL-STD-1686 MILHDBK-263. PAD130

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN3974 NPN Epitaxial Planar Silicon Transistor 2SC4735 27MHz CB Transceiver Driver Applications Features Package Dimensions unit:mm 2084B [2SC4735] 1.9 10.5 4.5 2.6 1.4 1.2 1.0 8.5 • Large power type such as PC=1.5W when used without heatsink.


    Original     		PDF ENN3974 2SC4735 27MHz 2084B 2SC4735]

    2SB1151L-T60-T

    Abstract: 2SB1151 2SB1151L 2SB1151-T60-T 2SD1691 1K TRANSISTOR
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation : PD=1.5W Ta=25℃ *Complementary to 2SD1691. 1 TO - 126 *Pb-free plating product number: 2SB1151L PIN CONFIGURATION


    Original     		PDF 2SB1151 2SD1691. 2SB1151L 2SB1151-T60-T 2SB1151L-T60-T O-126 QW-R204-022 2SB1151L-T60-T 2SB1151 2SB1151L 2SD1691 1K TRANSISTOR

    TRANSISTOR MARKING 1d6

    Abstract: No abstract text available
    Text: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high


    Original     		PDF ZXTP08400BFF OT23F, -400V 220mV 100mA ZXTN08400BFF OT23F ZXTP08400BFFTA D-81541 TRANSISTOR MARKING 1d6

    Untitled

    Abstract: No abstract text available
    Text: FPD2250 Datasheet v2.1 1.5W POWER PHEMT FEATURES: • • • • LAYOUT: 32 dBm Linear Output Power at 12 GHz 7.5 dB Power Gain at 12 GHz 42 dBm Output IP3 45% Power-Added Efficiency GENERAL DESCRIPTION: The FPD2250 is an AlGaAs/InGaAs pseudomorphic High


    Original     		PDF FPD2250 FPD2250 22A114. MIL-STD-1686 MIL-HDBK-263.

    TS16949

    Abstract: ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA
    Text: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high


    Original     		PDF ZXTP08400BFF OT23F, -400V 220mV 100mA ZXTN08400BFF OT23F ZXTP08400BFFTA D-81541 TS16949 ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA

    2SC4735

    Abstract: 2084B
    Text: Ordering number:EN3974 NPN Epitaxial Planar Silicon Transistor 2SC4735 27MHz CB Transceiver Driver Applications Features Package Dimensions unit:mm 2084B [2SC4735] 1.9 10.5 4.5 2.6 1.4 1.2 1.0 8.5 • Large power type such as PC=1.5W when used without heatsink.


    Original     		PDF EN3974 2SC4735 27MHz 2084B 2SC4735] 2SC4735 2084B

    ZXTN07012EFF

    Abstract: ZXTP07012EFF ZXTP07012EFFTA
    Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications


    Original     		PDF ZXTP07012EFF OT23F, -75mV ZXTN07012EFF OT23F OT23F ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA

    EC12T

    Abstract: 2SC4735 ITR07494 ITR07495 ITR07496 ITR07497
    Text: Ordering number:ENN3974 NPN Epitaxial Planar Silicon Transistor 2SC4735 27MHz CB Transceiver Driver Applications Features Package Dimensions unit:mm 2084B [2SC4735] 1.9 10.5 4.5 2.6 1.4 1.2 1.0 8.5 • Large power type such as PC=1.5W when used without heatsink.


    Original     		PDF ENN3974 2SC4735 27MHz 2084B 2SC4735] EC12T 2SC4735 ITR07494 ITR07495 ITR07496 ITR07497

    Untitled

    Abstract: No abstract text available
    Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications


    Original     		PDF ZXTP07012EFF OT23F, -75mV ZXTN07012EFF OT23F OT23F D-81541

    ZXTN08400BFF

    Abstract: ZXTN08400BFFTA ZXTP08400BFF sot23 6 device Marking
    Text: ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC cont = 0.5A VCE(sat) < 175mV @ 500mA PD = 1.5W Complementary part number ZXTP08400BFF Description C This NPN transistor has been designed for applications requiring high


    Original     		PDF ZXTN08400BFF OT23F, 175mV 500mA ZXTP08400BFF OT23F ZXTN08400BFF ZXTN08400BFFTA ZXTP08400BFF sot23 6 device Marking

    TS16949

    Abstract: ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150
    Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications


    Original     		PDF ZXTP07012EFF OT23F, -75mV ZXTN07012EFF OT23F OT23F D-81541 TS16949 ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150

    Zetex T 705

    Abstract: TRANSISTOR MARKING 1d6 TS16949 ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA
    Text: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high


    Original     		PDF ZXTP08400BFF OT23F, -400V 220mV 100mA ZXTN08400BFF OT23F ZXTP08400BFFTA D-81541 Zetex T 705 TRANSISTOR MARKING 1d6 TS16949 ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTP19020CFF 20V, SOT23F, PNP medium power transistor Summary: BVCEO > -20V BVECO > -5V IC cont = -5A VCE(sat) < 40mV @ 100mA RCE(sat) = 21m⍀ PD = 1.5W Complementary part number ZXTN19020CFF Description C Advanced process capability has been used to maximize the


    Original     		PDF ZXTP19020CFF OT23F, 100mA ZXTN19020CFF OT23F D-81541

    Untitled

    Abstract: No abstract text available
    Text: S0 T89 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FCX704 FEATURES: * 1A CONTINUOUS COLLECTOR CURRENT * 1.5W POWER DISSIPATION * GUARANTEED HFE SPECIFIED UP TO 2A * FAST SWITCHING PARTMARKING DETAIL - 704 ABSOLUTE MAXIMUM RATINGS VALUE UNIT -120


    OCR Scan     		PDF FCX704 -10mA* -10mA, -100mA, 300/iS. DS150

    Untitled

    Abstract: No abstract text available
    Text: SOT89 IMPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FCX604 FEATURES: * 1A CONTINUOUS COLLECTOR CURRENT * 1.5W POWER DISSIPATION * GUARANTEED HFE SPECIFIED UP TO 2A * FAST SW ITCHING PARTMARKING DETAIL - 6 0 4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL


    OCR Scan     		PDF FCX604 DS147

    transistor ztx

    Abstract: ZTX749 SE157
    Text: PNP Silicon Planar Medium Power Transistor ZTX 749 FEATURES • • • • • • 1.5W power dissipation at Tamb= 25°C* 2 A continuous lc Excellent gain characteristics up to 6A pulsed Low saturation voltages Fast switching NPN complementary type available


    OCR Scan     		PDF 300ns. SE158 ZTX749 SE161 100mA SE162 transistor ztx ZTX749 SE157

    ZTX605

    Abstract: SE109
    Text: NPN Silicon Planar Medium Power Darlington Transistors ZTX 604 ZTX605 FEATURES • • • • • 1.5W power dissipation 1A continuous collector current 4 A peak collector current Guaranteed hFE specified up to 2A Fast switching DESCRIPTION The ZT X6 04 and


    OCR Scan     		PDF ZTX605 ZTX605 ZTX604 100mA 2TX60A/5 SE113 SE109

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTB1151 EPITAXIAL PLANAR PNP TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES • High Power Dissipation : Pc=1.5W Ta=25°C • Complementary to KTD1691. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage


    OCR Scan     		PDF KTB1151 KTD1691.

    KTD1691

    Abstract: KTB1151
    Text: SEMICONDUCTOR TECHNICAL DATA KTD1691 EPITAXIAL PLANAR NPN TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES • High Power Dissipation : Pc=1.5W Ta=25°C • Complementary to KTB1151. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage


    OCR Scan     		PDF KTD1691 KTB1151. KTD1691 KTB1151

    ferranti

    Abstract: ZTX600 ZTX601 Scans-00107859 Ferranti Semiconductors
    Text: FERRANTI semiconductors ZTX600 ZTX601 NPN Silicon Medium Power Darlington Transistors FE A T U R ES • 1.5W power dissipation at Tamb = 25°C • 1A continuous collector current • High V CE0 up to 160V • Guaranteed hFE specified up to 1A • Fast switching


    OCR Scan     		PDF ZTX600 ZTX601 ZTX601 100mA 100mA ferranti Scans-00107859 Ferranti Semiconductors