Untitled
Abstract: No abstract text available
Text: Ultra-Small Ceramic Power Splitter/Combiner 2 Way-0° 50Ω 2825 to 3700 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 4W* max. *derate linearly to 1.3W at 100°C ambient, power input as
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SCN-2-35+
SCN-2-35
TB-252
PL-129)
M98898
SCN-2-35
ED-11378C/1
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SFPD-MR-12
Abstract: No abstract text available
Text: P/N: SFPD-MR-xx-xx-A Multi-Rate DWDM SFP Transceiver Features Available in all 100 GHz C-Band Wavelengths on the DWDM ITU Grid DWDM SFP MSA Compliant Cold Start Up Wavelength Compliance Low Power Dissipation < 1.3W Maximum -5ºC to 70ºC Operating Case Temperature
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100Mbps
OC-48/SDH
STM-16
28dBm
OC-48
120km
200km
DS-5454
SFPD-MR-12
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ITT333105BD
Abstract: 1008CS C0805C472K5RAC C1206C104K5RAC LL2012-F1N5S
Text: 4.6V 1.3W RF Power Amplifier IC for ETACS ITT333105BD Applications PRELIMINARY Features • • • • • • • ETACS Cellular Telephones ISM 900 MHz +VDD1 +VDD2 +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND N/C -VGG Class AB Bias 800 to 1000 MHz Operation
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ITT333105BD
ITT333105BD
1008CS
C0805C472K5RAC
C1206C104K5RAC
LL2012-F1N5S
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ZPY100
Abstract: No abstract text available
Text: ZPY1 thru ZPY100 Zener Diodes VZ Range 1.0, 3.9 to 100V Power Dissipation 1.3W min. 1.102 28.0 max. .161 (4.1) min. 1.102 (28.0) DO-204AL (DO-41 Glass) Features max. ∅ 0.102 (2.6) Cathode Mark • Silicon Planar Power Zener Diodes • For use in stabilizing and clipping circuits with
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ZPY100
DO-204AL
DO-41
ZMY10
ZMY100.
10K/box
10K/box
ZPU100
ZPY100
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FV1206-1
Abstract: SCN-2-65
Text: Ultra-Small Ceramic SCN-2-65+ SCN-2-65 Power Splitter/Combiner 2 Way-0° 50Ω 5500 to 6500 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 4W* max. *Derate linearly to 1.3W at 100°C ambient, power input as combiner is limited by rating of external 100Ω Resistor.
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SCN-2-65+
SCN-2-65
FV1206-1
M127604
ED-11378C/3
FV1206-1
SCN-2-65
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Untitled
Abstract: No abstract text available
Text: KSB1149 KSB1149 Low Collector Saturation Voltage Built-in Damper Diode at E-C • High DC Current Gain • High Power Dissipation : PC=1.3W Ta=25°C TO-126 1 1. Emitter 2.Collector 3.Base PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSB1149
O-126
PW10ms,
Cycle50%
KSB1149
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ZPY10
Abstract: ZPY100 DO-204AL ZMY10 ZMY100 ZPY11 ZPY12 ZPY13 ZPY15
Text: ZPY1 thru ZPY100 Zener Diodes VZ Range 1.0, 3.9 to 100V Power Dissipation 1.3W min. 1.102 28.0 max. .161 (4.1) min. 1.102 (28.0) DO-204AL (DO-41 Glass) Features max. ∅ 0.102 (2.6) Cathode Mark • Silicon Planar Power Zener Diodes • For use in stabilizing and clipping circuits with
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ZPY100
DO-204AL
DO-41
ZMY10
ZMY100.
10K/box
ZPU100
ZPU180
ZPY10
ZPY100
DO-204AL
ZMY10
ZMY100
ZPY11
ZPY12
ZPY13
ZPY15
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NPN 2A TO 126
Abstract: KSD1691 K*D1691
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 KSD1691 TRANSISTOR NPN 1. EMITTER FEATURES Low Collector-Emitter Saturation Voltage & Large Collector Current z High Power Dissipation: PC = 1.3W (Ta=25°C)
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O-126
O-126
KSD1691
NPN 2A TO 126
KSD1691
K*D1691
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M917
Abstract: MCL 0 splitter PL-129
Text: Ultra-Small Ceramic ! NEW Power Splitter/Combiner 2 Way-0° 50Ω 3700 to 4200 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 4W* max. *derate linearly to 1.3W at 100°C ambient, power input as
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SCN-2-45
TB-252
PL-129)
M91756
SCN-2-45
ED-11378C/2
M917
MCL 0 splitter
PL-129
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Wuxi
Abstract: YD2025D YD2025
Text: YD2025D YOUDA INTEGRATED CIRCUIT 1.3W STEREO AUDIO AMPLIFIER——YD2025D DESCRIPTION The YD2025D is a monolithic integrated audio Amplifier in a SOP20. It is designed for portable cassette players and radios. FEATURES *Working voltage down to 3V; *Few external components;
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YD2025D
AMPLIFIER----YD2025D
YD2025D
1YD2025D
Wuxi
YD2025
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LM4995
Abstract: LM4995TM
Text: LM4995 1.3 Watt Audio Power Amplifier General Description Key Specifications The LM4995 is an audio power amplifier primarily designed for demanding applications in mobile phones and other portable communication device applications. It is capable of delivering 1.3W of continuous average power to an 8Ω BTL
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LM4995
LM4995
CSP-9-111S2)
CSP-9-111S2.
LM4995TM
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c 4072
Abstract: SCN-2-45 FV1206-1
Text: Ultra-Small Ceramic SCN-2-45+ SCN-2-45 Power Splitter/Combiner 2 Way-0° 50Ω 3700 to 4200 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 4W* max. *derate linearly to 1.3W at 100°C ambient, power input as
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SCN-2-45+
SCN-2-45
M98898
ED-11378C/2
c 4072
SCN-2-45
FV1206-1
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Untitled
Abstract: No abstract text available
Text: 19-3457; Rev 1; 9/05 1.3W, Filterless, Stereo Class D Audio Power Amplifier The MAX9701 stereo Class D audio power amplifier provides Class AB amplifier audio performance with the benefits of Class D efficiency, eliminating the need for a heatsink while extending battery life. The MAX9701
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MAX9701
B20-1
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Untitled
Abstract: No abstract text available
Text: Ultra-Small Ceramic SCN-2-65+ SCN-2-65 Power Splitter/Combiner 2 Way-0° 50Ω 5500 to 6500 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 4W* max. *Derate linearly to 1.3W at 100°C ambient, power input as combiner is limited by rating of external 100Ω Resistor.
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SCN-2-65+
SCN-2-65
FV1206-1
M127604
SCN-2-65
ED-11378C/3
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BZX85
Abstract: BZX85 C27 BZX85 series Zener Z 5 BZX85-C2V7 BZX85-C3V0 BZX85-C3V3 BZX85-C3V6 BZX85-C3V9 BZX85-C4V3
Text: BZX85 Series ZENER DIODES PRODUCT SUMMARY VZ range: 3.6 to 200 Volts Power dissipation: 1.3W FEATURES Silicon Planar Power Zener Diodes. For use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international
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BZX85
DO-41Glass
BZX85 C27
BZX85 series
Zener Z 5
BZX85-C2V7
BZX85-C3V0
BZX85-C3V3
BZX85-C3V6
BZX85-C3V9
BZX85-C4V3
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BZX85C12
Abstract: BZX85 zener 1.3W BZX85 C27 BZX85-C12 BZX85-C2V7 BZX85-C3V0 BZX85-C3V3 BZX85-C3V6 BZX85-C3V9
Text: BZX85-C12 ZENER DIODES PRODUCT SUMMARY VZ range: 3.6 to 200 Volts Power dissipation: 1.3W FEATURES Silicon Planar Power Zener Diodes. For use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international
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BZX85-C12
DO-41Glass
BZX85C12
BZX85
zener 1.3W
BZX85 C27
BZX85-C12
BZX85-C2V7
BZX85-C3V0
BZX85-C3V3
BZX85-C3V6
BZX85-C3V9
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Untitled
Abstract: No abstract text available
Text: Ultra-Small Ceramic ! NEW Power Splitter/Combiner 2 Way-0° 50Ω 5500 to 6500 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 4W* max. *derate linearly to 1.3W at 100°C ambient, power input as combiner
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SCN-2-65
TB-252
PL-129)
M91756
SCN-2-65
ED-11378C/3
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2SC2178
Abstract: copper wire
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2178 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=15W Min. ( f=175MHz, VCC=12.5V, Pi=1.3W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=15V, Pl=1.3W, f=175MHz
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2SC2178
175MHz,
175MHz
8-10H1A
l75MHz,
2SC2178
copper wire
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2sa1793
Abstract: 2sc4657
Text: 2SA1793 SILICON PNP EPITAXIAL TYPE Unit in mm HIGH CURRENT SW ITCHING APPLICATIONS. • • • • Excellent hpE Linearity : hpE 120~400 at V c e = —IV, l£ = —1A Low Collector Saturation Voltage : v CE sat = -0.4V(M ax.) at I c = -3 A , Ib = -0.15A High Power Dissipation : PQ = 1.3W(Ta = 25°C)
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2SA1793
2SC4657.
--50V,
--10mA,
2sa1793
2sc4657
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AN374
Abstract: 374 J panasonic fj
Text: AN 374 7T— AN374 1.3wtaatii»*ï8/i.3 W •* « / Description AN 374 ;± 7 i - - v r , X T ■ Audio Power Amplifiers Circuit u U n it ! mm +& Îüt/Features • ;b ô i . 3 W i t « t • f ü g i± 1 l i s T - '' A 7 -f tjiïïte ffll-iîs+ S H ct E Oi
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AN374
39max.
30max.
48max.
100mV
AN374
374 J
panasonic fj
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5029 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : v CE(sat) = °-5V (Max.) • High Collector Power Dissipation : P q = 1.3W (Ta = 25°C)
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2SC5029
2SA1892
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL D A TA KTA1385D/L EPITAXIAL PLANAR PNP TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES • High Power Dissipation : Pc=1.3W Ta=25°C • Complementary to KTC5103D/L MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL
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KTA1385D/L
KTC5103D/L
-60mA-
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Untitled
Abstract: No abstract text available
Text: 114 Surface M ount Devices Zener Diodes, SOT-223 1.3W , Pinout W (cont.) VZ <V) at 'ztest=5 mA Type BZV90C 22 B ZV90C 24 min. max. typ. 2 3 .3 2 5 .6 20 25 2 0 .8 2 2 .8 t 'Ztest- 2 BZV90C 27 25.1 BZV90C30 2 8 .0 3 1 .0 3 4 .0 BZV90C33 BZV90C36 BZV90C39
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OT-223
BZV90C
ZV90C
BZV90C30
BZV90C33
BZV90C36
BZV90C39
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2SC5028
Abstract: 2SA1891
Text: TOSHIBA 2SC5028 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5028 Unit in mm POWER SWITCHING APPLICATIONS • • Low Collector Saturation Voltage : VCE (sat)~ —0.5V (Max.) High Collector Power Dissipation : P(} = 1.3W (Ta = 25°C)
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2SC5028
500ns
2SA1891
2SC5028
2SA1891
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