Untitled
Abstract: No abstract text available
Text: S E MT E CH CORP Sf l E D • 0Q0342A 2 AMP OVERVOLTAGE PROTECTORS 474 L-2-OV ABSOLUTE MAXIMUM RATINGS UNITS SYMBOL MAXIMUM V dc 2 .6 1DC 2 Am ps IpK 20 Am ps Iq 35 mA Po 5.2 W atts Öjc 5 °C/W C on d u ctin g - 4 0 to 124 °C N o n -co n d u ctin g - 40 to 100
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0Q0342A
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ME602003
Abstract: e60 diode isa2000 diode module 30 A powerex nd
Text: 15E D PÔÙIEREX INC • 72TMh21 0Q033b7 3 ■ fOMERST ME602003 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003Le Mans, France (43) 72.75.15 7 7 lf 6 G -P /lc iS @ Q /o C / B r i d Q Q
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72TMh21
0Q033b7
BP107
72003Le
ME602003
Amperes/2000
ME602003
ME6020Q3
e60 diode
isa2000
diode module 30 A
powerex nd
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE, T3 D • ÖS13flSG 0Q03Sbö 1 SEMICONDS / ICS 93D 03568.]/ r W ^ BIPOLAR TRANSISTOR CHIPS NPN Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO THBC107 THBC107A THBC107B THBC108 THBC108A
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S13flSG
0Q03SbÃ
THBC107
THBC107A
THBC107B
THBC108
THBC108A
THBC108B
THBC108C
THBC109
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volpi
Abstract: Side Brazed Ceramic Dual-In-Line Packages 28 54ABT374 54ABT574
Text: NAPC/ S I G N E T I C S / M I L I T A R Y MME » B bbSH^b 0Q0330b b ESSICI Slgnetics Military Advanced BICMOS Products P relim inary specification Octal D flip-flop 3-State 54ABT574 T-H6-Q7-H FEATURES DESCRIPTION • 54ABT574 is the broadside pinout version
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0Q0330b
54ABT574
54A8T574
54ABT374
500mA
54ABT574
22-Lead
T-90-20
14-Pin
16-Pin
volpi
Side Brazed Ceramic Dual-In-Line Packages 28
54ABT374
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PIC1657
Abstract: No abstract text available
Text: MICROCHIP TECHNOLOGY GENERAL INSTRUMENT INC A3 D • hioaaol 0Q03 435 s ■ PIC1657 / -r-49 -iq _05 PRELIMINARY INFORMATION 8 BIT MICROCOMPUTER FEATURES - 32 8 -bit RAM registers 512 x 12-bit program ROM - Arithmetic Logic Unit - Real Time Clock/Counter - Self contained oscillator for crystal or ceramic
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-r-49
PIC1657
12-bit
PIC1657
DS30002C-14
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Untitled
Abstract: No abstract text available
Text: PHILIPS E C G INC 17E D hbSBTEñ 0Q03S4S ñ ECG804 T -7 7 -0 5 -0 9 DUAL AUDIO AMPLIFIER - 2 WATTS PER CHANNEL semiconductors F eatures: • • • L o w D is tortio n L o w Q u ie s c e n t C u rre n t S e lf C e n te rin g Bias H ig h In p u t Im p e d an ce
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0Q03S4S
ECG804
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Untitled
Abstract: No abstract text available
Text: 17E D PHILIPS E C G INC • bbSaTSñ 0Q0355Q 1 U ~ f - j y - Q - y - ô y ECG807 TV SOUND CHANNEL— 1-WATT OUTPUT semiconductors OUTLINE The Type ECG807 TV Sound Channel is a monolithic integrated circuit designed for use in small screen TV or mobile f-m systems. The
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0Q0355Q
ECG807
ECG807
20logjo
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T-70S
Abstract: No abstract text available
Text: STANDARD MICROSYSTEMS bS D e | B5h4LBt 0Q03477 4 | yT-75-V^-Ol COM 9004 STANDARD MICROSYSTEMS CORPORATION IBM 3274/3276 Compatible COAX Receiver/Transmitter PIN CONFIGURATION FEATURES □ C onform s to the IBM 3270 Interface Display System Standard . □ Transm its and R eceives M anchester II Code
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0Q03477
yT-75-V
T-70S
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faa 13
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC ^3 D • 0504330 0Q03bfi7 Ö ■ T-91-01 PROCESS FAA Process FAA PNP High-Power Transistor Process FAA is a double-diffused epitaxial planar PN P silicon device designed as a high-speed, highcurrent switch and for use in other high-power
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0Q03bfi7
T-91-01
0003L>
faa 13
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Untitled
Abstract: No abstract text available
Text: GOLDSTAR TECHNOLOGY INC/ M?E D 4QH6757 GoldStar 0Q0351S S «GST T - V 4 2 3 - / 7 GMM736256SG-70/80/10 262,144 WORDS x 36 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM736256SG is a 256K word x 36 Bits dy namic RAM Module which assembled 8 pieces of
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4QH6757
0Q0351S
GMM736256SG-70/80/10
GMM736256SG
256Kx
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MP5505
Abstract: MPOP07 MP5507 MPOP07C MPOP05
Text: 2QE D • tiQTTHM4 0Q03 34S S ■ MICRO f»OUE# R SYSTEMS INC pcS v e r s y s tem s Operational Amplifiers for Instrumentation ' MPQP05 / OP07 / OPIO T - 7 7 - 06-u> FEATURES MPOPOS • • • • • • GENERAL DESCRIPTION Replaces OP-05 L ow est Noise in th e In d u stry 0.1 Hz to 10 H z—0.25fiVp-p
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MPQP05
OP-05
25fiVp-p
QP-07
25juV
MP5505
MPOP07
MP5507
MPOP07C
MPOP05
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Untitled
Abstract: No abstract text available
Text: ISE » • E e 7E'14b21 0Q03B27 2 POWEREX INC p o M n r Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 C N 24 C D 24 C C 24 10 10 10 ' -¿¿-o?
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14b21
0Q03B27
BP107,
peres/600-1200
Amperes/600-1200
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KSB13060
Abstract: KR324515 KR224503 KSC2301 KQ421K15 KQ421K10 KR224505 ksC230 ksb230 ksb130
Text: POUEREX INC m u 31E I m • 7514Î.S1 0Q03737 T « P R X T-32-2T _ y Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G . Durand, BP107,72003 Le Mans, France (43) 41.14.14
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0Q03737
T-32-2T
BP107
Non-12
KSB13060
KR324515
KR224503
KSC2301
KQ421K15
KQ421K10
KR224505
ksC230
ksb230
ksb130
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Untitled
Abstract: No abstract text available
Text: HURATA ERIE NORTH AMERICA 31E D • b31flflbS 0Q03357 h ■ 50-'2^ HYBRID CLOCK OSCILLATORS TTL, CMOS, ECL & SINEWAVE PIN CONNECTIONS: Model : A01805, A01806, A01808 Pin Pin Pin Pin NC 1 7 8 14 OV & case GND output Vco Model A01807 Pin Pin Pin Pin NC - 5 .2 V
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b31flflbS
0Q03357
A01805,
A01806,
A01808
A01807
A0180
MIL-STD-883
24-pin
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Untitled
Abstract: No abstract text available
Text: KYOCERA INC/ ELCO CORP 71E » • S5R300b 0Q03354 420 Mating Condition Dual Row Receptacle. Headerx i SERIES 8261 HEADER ROUND POST 2.54/. 100 $ - 6 1 -1 5 Post Contact \ Header Hole Pattern Mounting A 2 .5 4 /.100 o o I \ \ 0 . 8 ~ I .I /0 . O3I-.O43 Triple
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S5R300b
0Q03354
86/-653-ELCO
D-5240
CB60BB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors 80C51 Family 80C51 family architecture 80C51 ARCHITECTURE The interrupt service locations are spaced at 8-byte intervals: 0Q03H for External Interrupt 0 , 000BH for Timer 0, 0013H for External Interrupt 1, 001BH for Timer 1 , etc. If an interrupt service routine is
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80C51
16-bit
80C51,
12MHz)
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ecg708
Abstract: simple slope FM detector
Text: bb53T2ô 0Q03SL7 b ECG708 FM DETECTOR AND LIMITER sem iconductor# .T '7 7 - 0 S - c > 7 _ PHILIPS E C G INC 17E D DESCRIPTION A unique method of FM detection by a new tech nique of linear gating is featured in the Type ECG708 monolithic integratedcircuit. This linear device com
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bb53T2ô
0Q03SL7
ECG708
ECG708
si17E
Q0Q3272
simple slope FM detector
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Fujitsu VCO
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS 7fl DE| 374T?ba 0Q03717 □ Advanced Information 3749762 FUJITSU MICROELECTRONICS 78C 03717 0^ T-46-23-10 Bipolar Memory • MBM10494-15, MBM100494-15 64K Bit ECL RAM Target Specifications ■ Organization: 16,384 x 4 o< o A c c e ss Time:
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0Q03717
T-46-23-10
MBM10494-15,
MBM100494-15
1500mW
Fujitsu VCO
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LB250
Abstract: 2N2222A A13852
Text: ALLEGRO MICROSYSTEMS INC T3 D 050433Ô 0Q03703 2 • T-91-01 PROCESS JG A Process JGA NPN Small-Signal Transistor Process JG A is a double-diffused NPN silicon epi taxial planar device intended for use in generalpurpose amplifiers and medium power switching ap
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05Q433Ã
T-91-01
500mA
LB250
2N2222A
A13852
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ECG785
Abstract: tv schematic diagram PHILIPS remotecontrol schematic diagram 38 pig
Text: PHILIPS E C G INC 17E D bb53iafl 0Q034ÖS £ ECG785 ULTRA-HIGH-GAIN WIDE BAND AMPLIFIER ARRAY semiconductors • Three Individual GeneraUPurpose Amplifiers • Ideal or service in Remote-Control Amplifiers — — e.g., TV Receivers HIGHLIGHTS • Thre* separate amplifiers gain and bandwidth for each amplifier can be adjusted
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T-74-09-01
ECG78S
ECG785
tv schematic diagram PHILIPS
remotecontrol schematic diagram
38 pig
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DS2012
Abstract: DS2212 OC310
Text: DALLAS SEMICONDUCTOR CORP 3SE D abmi30 Q0D32S7 fi IDAL DS2212 • PRELIMINARY "T-4fc>‘3S DS2212 FIFO Stik DALLAS SEMICONDUCTOR FEATURES PIN CONNECTIONS • Flrst-in, flrst-out memory-based architec ture o =1 • Flexible 16384 x 9 organization Z~3 a CZ3
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abmi30
00032S7
DS2212
DS2212
30-posltion
30-Pin
0Q032bl
DS2012
OC310
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SC015-4
Abstract: 15X15 SC015-2 SC015-6
Text: SCOI 5 1.0A GENERAL USE r e c t i f i e r d io d e Outline Drawing • 12-“ I Features Marking • Surface mount device • High reliability 1 1 l u u L iviAAr~\r\ 1INva I - SYMBOL _ Applications / p ■ AB 1 • General purpose rectifier applications
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SC015-2
SC015-4
SC015-6
15X15"
0Q03bSfa
15X15
SC015-6
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Untitled
Abstract: No abstract text available
Text: H Y 6 2 8 1 0 0 A -I •HYUNDAI S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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128KX
HY628100A-I
1DD03-11-MAY94
0Q037hD
HY628100ALP-I
HY628100ALLP-I
HY628100ALG-I
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Untitled
Abstract: No abstract text available
Text: • • H Y U N D A I H Y 5 1 1 7 8 1 0 S e r ie s 2 M x 8-bit CMOS DRAM with WPB DESCRIPTION The HY5117810 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5117810 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117810
HY5117810
1AD10-10-MAY94
HY5117810JC
HY5117810SLJC
HY5117810TC
HY5117810SLTC
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