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    Text: TOSHIBA TIM5964-35SLA MICROWAVE POWER GaAs FET PRELIMINARY Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 35.0 dBm • High power - P1dB = 45.5 dBm at 5.9 GHz to 6.4 GHz • High efficiency - tiadd = 39% at 5.9 GHz to 6.4 GHz • High gain


    OCR Scan     		PDF TIM5964-35SLA MW50830196 00EE4Ã TIM5964-35SL 15GHz 0DS24fl2