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    09JUN2008 Search Results

    09JUN2008 Datasheets Context Search

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    SL1014I

    Abstract: SL1014Y TSL1014 tsl10143 TSL1014IF SL1014 automotive parts TSL1014IYFT
    Text: TSL1014 14 + 1 channel buffers for TFT-LCD panels Datasheet − production data Features • Wide supply voltage: 5.5 V to 16.8 V ■ Low operating current: 6 mA typical at 25 °C ■ Gain bandwidth product: 1 MHz ■ High current COM amplifier: ±100 mA output


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    PDF TSL1014 TQFP48 TQFP48 TSL1014 SL1014I SL1014Y tsl10143 TSL1014IF SL1014 automotive parts TSL1014IYFT

    Untitled

    Abstract: No abstract text available
    Text: VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance 1 RDS(ON) 250m (1) Current limitation (typ) (1) Drain-Source clamp voltage ILIMH 1.7A VCLAMP 40V 1. Per each device. SO-8 • Linear current limitation • Thermal shutdown


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    PDF VNS1NV04DP-E VNS1NV04DP-E

    MLX81101

    Abstract: MLX90302 s2 12V SDS RELAY MLX90614xCF SDS RELAY s2 24v 01CH marking transistor MLX90614XCC thermostat pw MLX90614ESF-BAA block diagram of energy saving system using Infra
    Text: MLX90614 family Single and Dual Zone Infra Red Thermometer in TO-39 Features and Benefits Applications Examples ‰ Small size, low cost ‰ Easy to integrate ‰ Factory calibrated in wide temperature range: -40…+125 ˚C for sensor temperature and -70…+380 ˚C for object temperature.


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    PDF MLX90614 0x0000 17-Aug-2007 90614xCC 90614xCF 90614xCF. 09-Jun-2008 03-May-2009 MLX81101 MLX90302 s2 12V SDS RELAY MLX90614xCF SDS RELAY s2 24v 01CH marking transistor MLX90614XCC thermostat pw MLX90614ESF-BAA block diagram of energy saving system using Infra

    TDA7333N

    Abstract: No abstract text available
    Text: TDA7333N RDS/RBDS processor Features • 3rd order high resolution sigma delta converter for MPX sampling ■ Digital decimation and filtering stages ■ Demodulation of european radio data system RDS ■ Demodulation of USA radio broadcast data system (RBDS)


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    PDF TDA7333N TDA7333N

    sl1014i

    Abstract: SL1014 SL1014Y TSL1014IF TQFP48 TSL1014 TSL1014IFT TSL1014IYFT Gamma13 849ma
    Text: TSL1014 14 + 1 channel buffers for TFT-LCD panels Features • Wide supply voltage: 5.5 V to 16.8 V ■ Low operating current: 6 mA typical at 25° C ■ Gain bandwidth product: 1 MHz ■ High current com amplifier: ±100 mA output current ■ Industrial temperature range: -40° C to +85° C


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    PDF TSL1014 TQFP48 TSL1014 sl1014i SL1014 SL1014Y TSL1014IF TQFP48 TSL1014IFT TSL1014IYFT Gamma13 849ma

    Untitled

    Abstract: No abstract text available
    Text: BUL49D BULB49D High voltage fast-switching NPN power transistors Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ High ruggedness 1 2 3 3 1 2 TO-220FP


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    PDF BUL49D BULB49D O-220FP O-220

    fixed point IIR Filter

    Abstract: FIR FILTER implementation in ARM instruction ARM966E-S STR910-EVAL ARM966E-S microcontroller 265-1051 STMicroelectronics DFT Library 4101-062
    Text: UM0304 User manual STR91x DSP library DSPLIB Introduction This manual presents a library of ARM assembly source code modules for digital signal processing (DSP) applications such as infinite impulse response (IIR) filter, finite impulse response (FIR) filter and fast Fourier transform (FFT) applicable for a range of DSP


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    PDF UM0304 STR91x fixed point IIR Filter FIR FILTER implementation in ARM instruction ARM966E-S STR910-EVAL ARM966E-S microcontroller 265-1051 STMicroelectronics DFT Library 4101-062

    BUL49* ST TRANSISTOR

    Abstract: BUL49D BUL49DFP BULB49D BULB49D-1 BULB49DT4 JESD97 Date Code Marking STMicroelectronics diode bul49
    Text: BUL49D BULB49D High voltage fast-switching NPN power transistors Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ High ruggedness 3 3 1 2 1 2 TO-220FP


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    PDF BUL49D BULB49D O-220FP O-220 BUL49* ST TRANSISTOR BUL49D BUL49DFP BULB49D BULB49D-1 BULB49DT4 JESD97 Date Code Marking STMicroelectronics diode bul49

    transistor bd442

    Abstract: 0016114E BD440 BD441 BD442 JESD97 PNP POWER TRANSISTOR SOT-32
    Text: BD442 PNP power transistor Features • PNP transistor Applications ■ Linear and switching industrial equipment Description This devices is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain


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    PDF BD442 BD441. OT-32 transistor bd442 0016114E BD440 BD441 BD442 JESD97 PNP POWER TRANSISTOR SOT-32

    TDA7333N

    Abstract: TDA7333NTR TSSOP16
    Text: TDA7333N RDS/RBDS processor Features • 3rd order high resolution sigma delta converter for MPX sampling ■ Digital decimation and filtering stages ■ Demodulation of european radio data system RDS ■ Demodulation of USA radio broadcast data system (RBDS)


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    PDF TDA7333N TDA7333N TDA7333NTR TSSOP16

    STMP811

    Abstract: STMPE811 AN2825
    Text: STMPE811 S-Touch advanced resistive touchscreen controller with 8-bit GPIO expander Features • 8 GPIOs ■ 1.8 - 3.3 V operating voltage ■ Integrated 4-wire touchscreen controller ■ Interrupt output pin ■ Wakeup feature on each I/O ■ SPI and I2C interface


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    PDF STMPE811 12-bit 128-depth QFN16 STMPE811 STMP811 AN2825

    PD0023

    Abstract: No abstract text available
    Text: PD0023 Packing information Shipping media for TSSOP8 thin shrink small outline package Introduction The TSSOP8 thin shrink, small outline, surface mount package is supplied in tape and reel packing. The reels are standard 330 mm diameter and contain 4000 devices. The tape used


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    PDF PD0023 481-C PD0023

    M29W640GB

    Abstract: M29W640GT M29W640GL
    Text: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature „ Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) FBGA TSOP48 (NA)


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    PDF M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 16-word/32-byte M29W640GH/L: M29W640GT/B M29W640GB

    Untitled

    Abstract: No abstract text available
    Text: STMPE811 S-Touch advanced resistive touchscreen controller with 8-bit GPIO expander Features • 8 GPIOs ■ 1.8 - 3.3 V operating voltage ■ Integrated 4-wire touchscreen controller ■ Interrupt output pin ■ Wakeup feature on each I/O ■ SPI and I2C interface


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    PDF STMPE811 12-bit 128-depth QFN16

    Untitled

    Abstract: No abstract text available
    Text: STMPE811 S-Touch advanced resistive touchscreen controller with 8-bit GPIO expander Features • 8 GPIOs ■ 1.8 - 3.3 V operating voltage ■ Integrated 4-wire touchscreen controller ■ Interrupt output pin ■ Wakeup feature on each I/O ■ SPI and I2C interface


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    PDF STMPE811 QFN16 12-bit 128-depth STMPE811

    MLX81101

    Abstract: TRANSISTOR SMD MARKING CODE 2t Ir sensor pin details block diagram of energy saving system using Infrared TRANSISTOR SMD MARKING CODE KE 6 PIN PWM SMD IR thermometer MLX90614ESF-BAA ir thermometer sensor Ir sensor 6 pin
    Text: MLX90614 family Single and Dual Zone Infra Red Thermometer in TO-39 Features and Benefits Applications Examples ‰ Small size, low cost ‰ Easy to integrate ‰ Factory calibrated in wide temperature range: -40 to 125 ˚C for sensor temperature and -70 to 380 ˚C for object temperature.


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    PDF MLX90614 0x0000 17-Aug-2007 90614xCC 90614xCF 90614xCF. 09-Jun-2008 30/Jul2008 MLX81101 TRANSISTOR SMD MARKING CODE 2t Ir sensor pin details block diagram of energy saving system using Infrared TRANSISTOR SMD MARKING CODE KE 6 PIN PWM SMD IR thermometer MLX90614ESF-BAA ir thermometer sensor Ir sensor 6 pin

    Untitled

    Abstract: No abstract text available
    Text: M27W512 512 Kbit 64 Kbit x8 low-voltage OTP EPROM Features • 2.7 to 3.6 V supply voltage in read operation ■ Access time: 100 ns ■ Pin compatibility with M27C512 ■ Low power consumption – 15 µA max Standby current – 15 mA max Active current at 5 MHz


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    PDF M27W512 M27C512 PLCC32

    VNS1NV04DP-E

    Abstract: 2010 so-8 VNS1NV04DP vns1nv04dptr-e
    Text: VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance 1 Current limitation (typ) RDS(ON) 250mΩ (1) Drain-Source clamp voltage (1) ILIMH 1.7A VCLAMP 40V 1. Per each device. SO-8 • Linear current limitation ■ Thermal shutdown


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    PDF VNS1NV04DP-E VNS1NV04DP-E 2010 so-8 VNS1NV04DP vns1nv04dptr-e

    3F8000H-3FFFFFH

    Abstract: No abstract text available
    Text: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature • Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) ■ Asynchronous random/page read


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    PDF M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 16-word/32-byte M29W640GH/L: M29W640GT/B 3F8000H-3FFFFFH

    1N914

    Abstract: M27C512 M27W512 PLCC32 M27C512 ST
    Text: M27W512 512 Kbit 64 Kbit x8 low-voltage OTP EPROM Features • 2.7 to 3.6 V supply voltage in read operation ■ Access time: 100 ns ■ Pin compatibility with M27C512 ■ Low power consumption – 15 µA max Standby current – 15 mA max Active current at 5 MHz


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    PDF M27W512 M27C512 PLCC32 1N914 M27C512 M27W512 PLCC32 M27C512 ST

    Untitled

    Abstract: No abstract text available
    Text: 2 THIS DRAWI NG IS UNPUBLISHED. C OP Y RI G HT 2008 TE RELEASED CONNECTIVITY ALL F OR PUBLICATIO N RIGHTS 2008 L OC RESERVED. GP CAGE A SS EM BLY M A T E R I A L : NICKEL SILVER, 0.25 HEAT S I NK MATER I A L : A L U M I NU M HEAT S I NK C L I P MATERIAL: STAINLESS


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    PDF DWN2008 09JUN2008

    1355072

    Abstract: 964562 14 POL LC 1355036 8-968973-1
    Text: THIS DRAWI NG IS UNPUBLISHED. RELEASED F OR 2011 PUBLICATIO N A MATED W ITH / ALL C O P Y R I G H T 2011 RIGHTS p assend RESERVED. 30 36.2 38 39.9 41 34.2 1 0 . 0g zu 21 REV I S I ONS DIST L OC P R O J E K T NR A97-52046 Al LTR Pre-Dash-No NOTES PRE-LOCKED


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    PDF A97-52046 16JUN2005 27N0V2007 09JUN2008 1355072 964562 14 POL LC 1355036 8-968973-1

    Untitled

    Abstract: No abstract text available
    Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. D A+0.25•INTER-CONTACT KEYING SLOT [±.01 O] A 9.35 Tzr nu Tzr LJ LJ JZL r\ r\ rzL nn TU L r~\ n nzc Tzr TT \_/ LJ LJ JZL JZL r\


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    PDF 31MAR2000 09JUN2008 09JUN2008

    114-18085-025

    Abstract: 8-968975-1 964562 9645 Tyco 108-18 8-968972-2
    Text: TH I S DRAW ING VERTRAULICHE IS UNPUBLI S H E D . UNVEROEFFENTLICHTE R ELEA S ED ZEICHNUNG BY C O P Y R I G H T 2007 TYCO FOR P U B L I C A T I ON ^l ATE D W ITH: E S S E N D ZU: FREI ELEC TR O N IC S F UER V E R O E F F E N T L I C H U N G A LL R IGHTS


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    PDF A97-52046 28MAY2003 161UN2005 27N0V2007 09JUN2008 6-21doM 3IMAR2000 114-18085-025 8-968975-1 964562 9645 Tyco 108-18 8-968972-2