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    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 128Mb: x16 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features Figure 1: • Temperature compensated self refresh TCSR • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be


    Original     		128Mb: MT48H8M16LF 096-cycle 09005aef8237e877/Source: 09005aef8237e8d8 PDF

    8M16

    Abstract: MT48H8M16LFB4-8 MT48 MT48H8M16LF
    Text: 128Mb: x16 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features Figure 1: • VDD/VDDQ = 1.70–1.95V • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be


    Original     		128Mb: MT48H8M16LF 096-cycle 09005aef8237e877/Source: 09005aef8237e8d8 8M16 MT48H8M16LFB4-8 MT48 PDF