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Catalog Datasheet	MFG & Type	Document Tags	PDF
mt48h8m32lfb5-75lit Abstract: 256Mb MT48 MT48H16M16LF MT48H8M32LF mt48h8m32lfb5 rev g Text: 256Mb: x16, x32 Mobile SDRAM Features Mobile SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Table 1: • Fully synchronous; all signals registered on positive edge of system clock • VDD/VDDQ = 1.70–1.95V • Internal, pipelined operation; column address can	Original	256Mb: MT48H16M16LF MT48H8M32LF 09005aef8219eeeb/Source: 09005aef8219eedd mt48h8m32lfb5-75lit 256Mb MT48 MT48H16M16LF MT48H8M32LF mt48h8m32lfb5 rev g	PDF
Untitled Abstract: No abstract text available Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Features Table 1: • Fully synchronous; all signals registered on positive	Original	256Mb: MT48H16M16LF MT48H8M32LF 09005aef8219eedd/ 09005aef8219eeeb MT48H16M16LF	PDF
smd transistor marking A10 Abstract: truth table for 8 to 3 decoder AH MARKING SMD MARKING CODE A12 smd marking g8 MT48 MT48H16M16LF MT48H8M32LF BA1A11 Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Table 1: • Fully synchronous; all signals registered on positive edge of system clock • VDD/VDDQ = 1.70–1.95V	Original	256Mb: MT48H16M16LF MT48H8M32LF 09005aef8219eeeb/Source: 09005aef8219eedd MT48H16M16LF smd transistor marking A10 truth table for 8 to 3 decoder AH MARKING SMD MARKING CODE A12 smd marking g8 MT48 MT48H8M32LF BA1A11	PDF
Untitled Abstract: No abstract text available Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features Table 1: • Fully synchronous; all signals registered on positive	Original	256Mb: MT48H16M16LF MT48H8M32LF Deep900 09005aef8219eedd/ 09005aef8219eeeb MT48H16M16LF	PDF
Untitled Abstract: No abstract text available Text: Preliminary‡ 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Features Table 1:	Original	256Mb: MT48H16M16LF MT48H8M32LF 09005aef8219eedd/ 09005aef8219eeeb MT48H16M16LF	PDF
marking code e14 SMD Abstract: No abstract text available Text: 256Mb: x16, x32 Mobile SDRAM Features Mobile SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Table 1: • Fully synchronous; all signals registered on positive edge of system clock • VDD/VDDQ = 1.70–1.95V • Internal, pipelined operation; column address can	Original	256Mb: MT48H16M16LF MT48H8M32LF 09005aef8219eeeb/Source: 09005aef8219eedd marking code e14 SMD	PDF
D207 Abstract: No abstract text available Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Table 1: • Fully synchronous; all signals registered on positive edge of system clock • VDD/VDDQ = 1.70–1.95V	Original	256Mb: MT48H16M16LF MT48H8M32LF 09005aef8219eedd/ 09005aef8219eeeb MT48H16M16LF D207	PDF