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    8M16

    Abstract: micron ddr transistor marking A9 diode MARKING A9 MT46H8M16LF
    Text: Advance‡ 128Mb: 8 Meg x 16 Mobile DDR SDRAM Mobile Double Data Rate DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For a complete data sheet, please refer to www.micron.com/mobileds. Features Figure 1: 60-Ball VFBGA Assignment (Top View) • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V


    Original     		128Mb: MT46H8M16LF 60-Ball 09005aef818ff781/Source: 09005aef818ff799 MT46H8M16 8M16 micron ddr transistor marking A9 diode MARKING A9 MT46H8M16LF PDF

    90 ball VFBGA

    Abstract: diode MARKING A9 A12 marking transistor marking A9 MT46H16M16LF MT46H8M32LF mobile ddr
    Text: Preview‡ 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile DDR SDRAM Mobile Double Data Rate DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 Banks MT46H8M32LF – 2 Meg x 32 x 4 Banks For a complete data sheet, please refer to www.micron.com/mobileds. Features Figure 1: 60-Ball VFBGA Assignment


    Original     		256Mb: MT46H16M16LF MT46H8M32LF 60-Ball 09005aef818ff781/Source: 09005aef818ff799 MT46H16M16 90 ball VFBGA diode MARKING A9 A12 marking transistor marking A9 MT46H16M16LF MT46H8M32LF mobile ddr PDF