cr1 5 p26z
Abstract: No abstract text available
Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ
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128Mb:
MT45W8MW16BGX
09005aef80ec6f79/Source:
09005aef80ec6f65
cr1 5 p26z
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PDF
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BCR100
Abstract: No abstract text available
Text: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc
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128Mb
09005aef80ec6f79
pdf/09005aef80ec6f65
128Mb_
BCR100
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PDF
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micron memory sram
Abstract: a22 package marking label infineon Micron 32MB NOR FLASH DEVICE MARKING CODE table dram zip INFINEON transistor marking label infineon application note marking code C5 RCR Resistor
Text: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ
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Original
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128Mb
MT45W8MW16BGX
54-Ball
09005aef80ec6f79
pdf/09005aef80ec6f65
128Mb_
micron memory sram
a22 package marking
label infineon
Micron 32MB NOR FLASH
DEVICE MARKING CODE table
dram zip
INFINEON transistor marking
label infineon application note
marking code C5
RCR Resistor
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PDF
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MT45W8MW16BGX
Abstract: MT45W8MW16BGX-701LWT BDQ8 CSP3-20
Text: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ
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Original
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128Mb
MT45W8MW16BGX
54-Ball
39nsH
09005aef80ec6f79
pdf/09005aef80ec6f65
128Mb_
MT45W8MW16BGX
MT45W8MW16BGX-701LWT
BDQ8
CSP3-20
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PDF
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Untitled
Abstract: No abstract text available
Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC – 1.7–3.3V1 VCCQ
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128Mb:
MT45W8MW16BGX
09005aef80ec6f79/Source:
09005aef80ec6f65
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PDF
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Untitled
Abstract: No abstract text available
Text: 128 Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ
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Original
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MT45W8MW16BGX
09005aef80ec6f79/Source:
09005aef80ec6f65
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PDF
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MT45W8MW16BGX-7013LWT
Abstract: MT45W8MW16 FBGA DECODER MT45W8MW16BGX
Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/ Page/Burst CellularRAM 1.5 Memory Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC
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Original
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128Mb:
MT45W8MW16BGX
09005aef80ec6f79/Source:
09005aef80ec6f65
MT45W8MW16BGX-7013LWT
MT45W8MW16
FBGA DECODER
MT45W8MW16BGX
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PDF
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Untitled
Abstract: No abstract text available
Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ • Random access time: 70ns
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Original
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128Mb:
MT45W8MW16BGX
09005aef80ec6f79/Source:
09005aef80ec6f65
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PDF
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MT45W8MW16BGX
Abstract: MT45W8MW16BGX-701LWT 700000H-7FFFFFH
Text: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc
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Original
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128Mb
MT45W8MW16BGX
54-Ball
09005aef80ec6f79
pdf/09005aef80ec6f65
MT45W8MW16BGX
MT45W8MW16BGX-701LWT
700000H-7FFFFFH
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PDF
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