Untitled
Abstract: No abstract text available
Text: Product Specification 108-1889 08Sep08 Rev A SHUR-PLUG* and SHUR-PLUG* Receptacles 1. SCOPE 1.1. Content This specification covers perform ance, tests and quality requirem ents for SHUR-PLUG* and SHUR-PLUG* receptacles. The .180 inch diam eter SHUR-PLUG is only available as a straight contact
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08Sep08
28May08.
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UP78
Abstract: Aaa SMD MARKING
Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and
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Original
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Si8401DB
Si3443DV
Si8401DB-T1-E1
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
UP78
Aaa SMD MARKING
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PDF
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TEST2600
Abstract: TSSS2600 ic 8253
Text: TEST2600 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions L x W x H in mm : 3.6 x 2.2 x 3.4 • High radiant sensitivity • Daylight blocking filter matches with 940 nm
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TEST2600
TSSS2600
2002/95/EC
2002/96/EC
TEST2600
11-Mar-11
TSSS2600
ic 8253
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PDF
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TSALxxxx
Abstract: BPW41N BPW41N IR DATA BPW41N IR
Text: BPW41N Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions in mm : 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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Original
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BPW41N
2002/95/EC
2002/96/EC
BPW41N
11-Mar-11
TSALxxxx
BPW41N IR DATA
BPW41N IR
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PDF
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Si3443DV
Abstract: Si8401DB Si8401DB-T1-E1
Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and
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Original
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Si8401DB
Si3443DV
Si8401DB-T1-E1
11-Mar-11
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PDF
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BPW34 application note
Abstract: APPLICATION NOTE BpW34 BPW34 BPW34 circuit BPW34S BPW34 application
Text: BPW34, BPW34S Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: top view • Dimensions L x W x H in mm : 5.4 x 4.3 x 3.2 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity
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Original
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BPW34,
BPW34S
2002/95/EC
2002/96/EC
BPW34
BPW34S
11-Mar-11
BPW34 application note
APPLICATION NOTE BpW34
BPW34 circuit
BPW34 application
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PDF
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Si7784DP
Abstract: Si7784DP-T1-GE3 si7784
Text: New Product Si7784DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC S • Synchronous Rectification • DC/DC - High-Side Switch 5.15 mm
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Si7784DP
Si7784DP-T1-GE3
11-Mar-11
si7784
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PDF
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Untitled
Abstract: No abstract text available
Text: TEST2600 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions L x W x H in mm : 3.6 x 2.2 x 3.4 • High radiant sensitivity • Daylight blocking filter matches with 940 nm
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Original
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TEST2600
TSSS2600
2002/95/EC
2002/96/EC
TEST2600
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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PDF
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82064
Abstract: No abstract text available
Text: SPICE Device Model SiR890ADP Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiR890ADP
18-Jul-08
82064
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PDF
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SI9926CD
Abstract: Si9926CDY
Text: SPICE Device Model Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si9926CDY
18-Jul-08
SI9926CD
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PDF
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SiE836DF
Abstract: No abstract text available
Text: SPICE Device Model SiE836DF Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiE836DF
18-Jul-08
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PDF
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banana jack footprint
Abstract: A26578-ND MCR03EZPJ000 NC7SZ125M5X 160-1183-1-ND 300-8571-1-ND yc248 MCR03EZPJ331 111-0702-001-ND SMA-13
Text: Bill of Materials Project: 600057.PrjPCB Variant: Standard Build Revision: B SD356EVK Evaluation Board Creation Date: 9/5/2008 11:20:27 AM Print Date: 08-Sep-08 10:49:57 AM Item Designator Manufacturer Manufacturer Part Number Distributor Distributor Part Number
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Original
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SD356EVK
08-Sep-08
111-0702-001-ND
111-0703-001-ND
C3216X7R1C475K
ECJ-0EB1A105M
445-1385-2-ND
PCC2364CT-ND
2205k-ND
LMS4684LD
banana jack footprint
A26578-ND
MCR03EZPJ000
NC7SZ125M5X
160-1183-1-ND
300-8571-1-ND
yc248
MCR03EZPJ331
111-0702-001-ND
SMA-13
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SUM75N15-18P
18-Jul-08
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PDF
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s8208
Abstract: No abstract text available
Text: SPICE Device Model SiA430DJ Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiA430DJ
18-Jul-08
s8208
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PDF
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sharp laser diodes
Abstract: TSOP855
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book ir receiver modules vishay semiconductors vse-db0090-1010 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0090-1010
sharp laser diodes
TSOP855
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PDF
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Photoresistors
Abstract: TEPT4400
Text: TEPT4400 Vishay Semiconductors Ambient Light Sensor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • Adapted to human eye responsivity • Angle of half sensitivity: ϕ = ± 30°
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TEPT4400
2002/95/EC
2002/96/EC
TEPT4400
18-Jul-08
Photoresistors
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PDF
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Untitled
Abstract: No abstract text available
Text: TEKS5400 Vishay Semiconductors Silicon Photo Schmitt Trigger with Digital Output, RoHS Compliant FEATURES • • • • • 14355 DESCRIPTION TEKS5400 is a photo Schmitt Trigger with high radiant sensitivity, molded in a plastic package with side view lens
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Original
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TEKS5400
TSKS5400
2002/95/EC
2002/96/EC
TEKS5400
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: BPW76A, BPW76B Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW76A,
BPW76B
2002/95/EC
2002/96/EC
BPW76
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: BPV23F, BPV23FL Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions in mm : 4.5 x 5 x 6 • Radiant sensitive area (in mm2): 4.4 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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BPV23F,
BPV23FL
2002/95/EC
2002/96/EC
BPV23F
11-Mar-11
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PDF
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DFN-10
Abstract: HP4192A DG2616
Text: DG2616, DG2617, DG2618 Vishay Siliconix Low Voltage, Dual SPDT Analog Switch with Charge Pump DESCRIPTION The DG2616, DG2617, DG2618 are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining low power, high
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DG2616,
DG2617,
DG2618
DG2618
DFN-10
HP4192A
DG2616
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PDF
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TEMD5020X01
Abstract: J-STD-020D
Text: TEMD5020X01 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant, Released for Lead Pb -free Reflow Soldering, AEC-Q101 Released FEATURES • Package type: surface mount • Package form: top view • Dimensions (L x W x H in mm): 5 x 4.24 x 1.12
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TEMD5020X01
AEC-Q101
AEC-Q101
J-STD-020
TEMD5020X01
18-Jul-08
J-STD-020D
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PDF
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8ETU04-1
Abstract: 8ETU04S IRFP250
Text: 8ETU04S/8ETU04-1 Vishay High Power Products Ultrafast Rectifier, 8 A FRED PtTM FEATURES 8ETU04S 8ETU04-1 • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature Base cathode 2 • Designed and qualified for industrial level
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8ETU04S/8ETU04-1
8ETU04S
8ETU04-1
18-Jul-08
8ETU04-1
8ETU04S
IRFP250
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PDF
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8ETH03-1
Abstract: 8ETH03S IRFP250 100170dc
Text: 8ETH03S/8ETH03-1 Vishay High Power Products Hyperfast Rectifier, 8 A FRED PtTM FEATURES • Hyperfast recovery time 8ETH03-1 8ETH03S • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature • Designed and qualified for industrial level
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8ETH03S/8ETH03-1
8ETH03-1
8ETH03S
18-Jul-08
8ETH03-1
8ETH03S
IRFP250
100170dc
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PDF
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tyco A157
Abstract: No abstract text available
Text: 4 THIS 5 DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY ^ C O COPYRIGHT ELECTRONICS CORPORATION. 2 - ,- LOC ALL INTERNATIONAL RIGHTS RESERVED. G 1 DIST R E V IS IO N S o: LTR T1 DESCRIPTION REVISED PER EC R-08-02171 DATE DWN APVD 08SEP08 HMR D D DIMENSION APPLIES EROM EDGE OE METAL
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OCR Scan
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08SEP08
R-08-02171
08SEP2008
085EP2008
tyco A157
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PDF
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