Untitled
Abstract: No abstract text available
Text: IRFP244_RC, SiHFP244_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFP244
SiHFP244
AN609,
08-Jun-10
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Untitled
Abstract: No abstract text available
Text: APS00B MOUNTING DIMENSIONS ABSOLUTE MAXIMUM RATINGS MAGNETIC FLUX ROTATION -q SUPPLY VOLTAGE +q #12V POWER DISSIPATION 200mW TEMPERATURE -55 TO 150C CHARACTERISTICS @ 25C & 5V UNLESS OTHERWISE STATED 0.193 0.189 0.050 0,0 MIN SUPPLY VOLTAGE TEMPERATURE 0.016
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APS00B
200mW
AMOV04
25NOV04
08JUN11
25NOV03
5M-1982
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Untitled
Abstract: No abstract text available
Text: CWR06 www.vishay.com Vishay Sprague Solid Tantalum Surface Mount Capacitors TANTAMOUNT Conformal Coated, Military MIL-PRF-55365/4 Qualified FEATURES • Weibull failure rates B, C, D, T Exponential failure rates M, P, R, S • Tape and reel available per EIA 481
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CWR06
MIL-PRF-55365/4
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: E/H Military M/D55342 www.vishay.com Vishay Dale Thin Film QPL MIL-PRF-55342 Qualified Thin Film Resistor, Surface Mount Chip FEATURES • Established reliability, “R” failure rate level (100 ppm), C = 2 • High purity alumina substrate 99.6 % purity
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M/D55342)
MIL-PRF-55342
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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ILQ66-4X007T
Abstract: No abstract text available
Text: IL66, ILD66, ILQ66 www.vishay.com Vishay Semiconductors Optocoupler, Photodarlington Outtput, with Internal RBE Single, Dual, Quad Channel FEATURES Single Channel A 1 6 B C 2 5 C NC 3 4 E • Internal RBE for high stability • Four available CTR categories per package
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ILD66,
ILQ66
2002/95/EC
2002/96/EC
ILQ66
11-Mar-11
ILQ66-4X007T
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sot-23 L13
Abstract: gl05t-gs08 MARKING CODE L13
Text: GL05T to GL24T Vishay Semiconductors Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces FEATURES • IEC 61000-4-5 lightning see IPPM below 3 • ESD-protection acc. IEC 61000-4-2 ± 8 kV contact discharge ± 15 kV air discharge • Small package for use in portable electronics
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GL05T
GL24T
OT-23
2002/95/EC
18-Jul-08
sot-23 L13
gl05t-gs08
MARKING CODE L13
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as 21921
Abstract: No abstract text available
Text: GSOT05CL-V Vishay Semiconductors Two-Line ESD-Protection in SOT-23 FEATURES • Two-line ESD-protection device 1 2 • ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • Space saving SOT-23 package 3 20456 • AEC-Q101 qualified
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GSOT05CL-V
OT-23
OT-23
AEC-Q101
2002/95/EC
2002/96/EC
GSOT05CL-V
GSOT05CL-V-G-08
as 21921
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Untitled
Abstract: No abstract text available
Text: VS-16TTS.SPbF High Voltage Series Vishay Semiconductors Surface Mountable Phase Control SCR, 16 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 2 Anode • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21
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VS-16TTS.
J-STD-020,
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VLMB41. Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • High efficient InGaN technology • EIA and ICE standard package • Compatible with IR reflow, vapor phase and wave solder processes acc. to CECC 00802 and J-STD-020 • Available in 8 mm tape reel
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VLMB41.
J-STD-020
2002/95/EC
2002/96/EC
JESD22-A114-B
AEC-Q101
2011/65/EU
2002/95/EC.
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TSOP77038
Abstract: No abstract text available
Text: TSOP77038 www.vishay.com Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Very low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals • Supply voltage: 2.7 V to 5.5 V
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TSOP77038
2002/95/EC
2002/96/EC
11-Mar-11
TSOP77038
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M55342K06B
Abstract: 316-M M55342K06 E/H (Military M/D55342)
Text: E/H Military M/D55342 www.vishay.com Vishay Dale Thin Film QPL MIL-PRF-55342 Qualified Thin Film Resistor, Surface Mount Chip FEATURES • Established reliability, “R” failure rate level (100 ppm), C = 2 • High purity alumina substrate 99.6 % purity
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M/D55342)
MIL-PRF-55342
11-Mar-11
M55342K06B
316-M
M55342K06
E/H (Military M/D55342)
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Untitled
Abstract: No abstract text available
Text: Tape Information www.vishay.com Vishay Siliconix 8.00 2.00 ± 0.05 see note 6 Ø 1.50 4.00 see note 1 0.30 ± 0.05 + 0.1 0.0 A Ø 1.50 min. 1.75 ± 0.10 PowerPAK 1212 Ko Ao 5.5 ± 0.05 see note 6 Bo 12.0 ± 0.3 R0.2 max. R0.3 max. for version 1 A R0.3 typ.
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C15-0525-Rev.
08-Jun-15
90-2379-X
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Untitled
Abstract: No abstract text available
Text: SUM110P06-07L www.vishay.com Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) d RDS(on) (Ω) 0.0069 at VGS = -10 V -60 -110 0.0088 at VGS = -4.5 V • TrenchFET power MOSFET • Package with low thermal resistance
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SUM110P06-07L
O-263
SUM110P06-07L-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Tape Information www.vishay.com Vishay Siliconix TSSOP: 8 Lead 16 mm see note 1 4.0 B B Ø 1.5 + 0.1 - 0.0 A E see note 4 0.30 ± 0.05 F W B1 Bo R0.3 max. see note 6 see note 6 2.0 0.1 Ø 1.5 min. see note 4 Section A-A 8.0 Ao A R0.3 typ. K1 Ko Ao = 6.95 ± 0.1 mm
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C15-0525-Rev.
08-Jun-15
90-2345-X
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Untitled
Abstract: No abstract text available
Text: Tape Information www.vishay.com Vishay Siliconix PowerPAIR 6 x 3.7 Carrier Tape 1.75 ± 0.10 Ø A Ø 2.00 ± 0.05 see note 3 0.30 ± 0.05 1.5 .0 1. 5 + - 0 0.1 mi n. 8.00 4.00 see note 1 .20 ma R0 Ao A .5 Ko p. ty SECTION A - A 5.50 ± 0.05 see note 3 Bo
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C15-0528-Rev.
08-Jun-15
93-5264-X
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Untitled
Abstract: No abstract text available
Text: VS-175BGQ045 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 175 A FEATURES • 150 °C max. operating junction temperature • High frequency operation Cathode Anode • Ultralow forward voltage drop • Continuous high current operation
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VS-175BGQ045
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-175BGQ045HF4 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 175 A FEATURES • 150 °C max. operating junction temperature • High frequency operation Cathode Anode • Ultralow forward voltage drop • Continuous high current operation
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VS-175BGQ045HF4
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low input capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced switching and conduction losses
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SiHG47N60E
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-100BGQ015HF4 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 100 A FEATURES Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab® IF AV 100 A VR 15 V VF at IF 0.45 V IRM 870 mA at 100 °C • Ultralow forward voltage drop
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VS-100BGQ015HF4
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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08JUN10
Abstract: No abstract text available
Text: 4 T H IS D R AW IN G IS U N P U B L IS H E D . C O PYRIG H T 2 3 REVISIONS R E LE A S E D FO R P U B LIC A T IO N BY 1 7 C 0 ELEC TR O N IC S C O RPO RATIO N . ALL INTERNATIONAL RIGHTS RESERVED . AF 50 D E S C R IP T IO N 08JUN10 HMR PD REVISED RER E C R - 1 0 - 0 0 4 0 5 8
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08JUN10
08JUN10
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wk 294-0
Abstract: No abstract text available
Text: THIS DRAWING IS U NPUBLISHED. RELEASED FOR PUBLICATION LOC A L L RIGHTS RESERVED. D IS T DW / R E V IS IO N S p LTR B DESCRIPTION DATE 08JUN11 REVISED ECR— 11— 011782 D IM DIM. DWN APVD JL WK A A RECOMMENDED PCB LAYOUT RECOMMENDED PCB LAYOUT TOLERANCE:
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08JUN11
AR2000
wk 294-0
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 3 RELEASED FOR PUBLICATION - 2 REVISIONS - ALL RIGHTS RESERVED. By - G 14 LTR DESCRIPTION P6 STAMP AMP D MAXIMUM ÆXD^OL^ DWN DATE REVISED PER ECO-1 1- 01 1 7 5 7 08JUN1 APVD HMR DR 1 2 - 1 0 * APPROX AS SHOWN
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08JUN1
64mm2
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4863-2
Abstract: 083005
Text: TH I RD NOTES: I MATERIALS AND FINISHES: BODY - S T A I N L E S S S T E E L ,PASS IVATED HOUSING - BRASS, GOL D PLATING CONTACT - BeCu, G O L D PLATING INSULATOR - PTFE ELECTRICAL: 2. A. I M P E D A N C E : 50 O H M B. F R E Q U E N C Y R A N G E : DC 12 GHz
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . RELEASED FO R A LL C O P Y R IG H T BY ^ 0 0 E L E C T R O N IC S P U B L IC A T IO N IN TE R N A TIO N A L RIGHTS REVI SI ONS 50 R E S E R VE D . C O R P O R A T IO N . LTR D E S C R IP T IO N H RE VISED D
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08JUN10
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