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    Littelfuse Inc PSR033FS0800Z

    FUSE SQUARE 800A 700VAC/600VDC
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    DigiKey PSR033FS0800Z Bulk 3 1
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    TME PSR033FS0800Z 1
    • 1 $448.83
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    Ozdisan Elektronik PSR033FS0800Z
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    Littelfuse Inc PSR073FS0800Z

    FUSE POWR-SPEED INCH SZ:73 800A
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    DigiKey PSR073FS0800Z Box 2 1
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    Littelfuse Inc PSR072FL0800Z

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    DigiKey PSR072FL0800Z Bulk 2 1
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    Newark PSR072FL0800Z Bulk 2
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    Littelfuse Inc PSR072FS0800Z

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    DigiKey PSR072FS0800Z Bulk 2 1
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    Mouser Electronics PSR072FS0800Z
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    Newark PSR072FS0800Z Bulk 2
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    TTI PSR072FS0800Z Box 2
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    Sager PSR072FS0800Z 2
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    Littelfuse Inc PSR031FS0800Z

    FUSE SQUARE 800A 700VAC/600VDC
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    DigiKey PSR031FS0800Z Bulk 3
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    Newark PSR031FS0800Z Bulk 3
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    TME PSR031FS0800Z 1
    • 1 $359.23
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    Ozdisan Elektronik PSR031FS0800Z
    • 1 $600.9039
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    Sager PSR031FS0800Z 3
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    0800Z Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HD151TS305RP

    Abstract: HD151TS305RPEL TS300
    Text: HD151TS305RP Spread Spectrum Clock for EMI Solution REJ03D0021-0800Z Previous ADE-205-658G(Z Preliminary Rev.8.00 May.19.2003 Description The HD151TS305 is a high-performance Spread Spectrum Clock modulator. It is suitable for low EMI solution. Features


    Original     		PDF HD151TS305RP REJ03D0021-0800Z ADE-205-658G HD151TS305 HD151TS305RP HD151TS305RPEL TS300

    Untitled

    Abstract: No abstract text available
    Text: HSU88 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0140-0800Z Previous: ADE-208-077G Rev.8.00 Nov.06.2003 Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.


    Original     		PDF HSU88 REJ03G0140-0800Z ADE-208-077G) HSU88

    HSU277

    Abstract: No abstract text available
    Text: HSU277 Silicon Epitaxial Planar for UHF/VHF tuner Band Switch REJ03G0111-0800Z Previous: ADE-208-018G Rev.8.00 Oct.08.2003 Features • Low forward resistance. (rf = 0.7 Ω max) • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information


    Original     		PDF HSU277 REJ03G0111-0800Z ADE-208-018G) HSU277

    HRW0302A

    Abstract: No abstract text available
    Text: HRW0302A Silicon Schottky Barrier Diode for Rectifying REJ03G0156-0800Z Previous: ADE-208-015G Rev.8.00 Dec.15.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF HRW0302A REJ03G0156-0800Z ADE-208-015G) HRW0302A

    Untitled

    Abstract: No abstract text available
    Text: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0146-0800Z (Previous ADE-203-314G (Z) Rev. 7.0) Rev. 8.00 Nov. 28. 2003 Description Renesas Technology's HN58V1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced


    Original     		PDF HN58V1001 128-kword REJ03C0146-0800Z ADE-203-314G 131072word 128-byte

    Untitled

    Abstract: No abstract text available
    Text: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0145-0800Z (Previous ADE-203-028G (Z) Rev.7.0) Rev. 8.00 Nov. 27. 2003 Description Renesas Technology's HN58C1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced


    Original     		PDF HN58C1001 128-kword REJ03C0145-0800Z ADE-203-028G 131072word 128-byte

    HN58C1001 Series

    Abstract: HN58C1001-15 HN58C1001 HN58C1001P-15 HN58C1001FP-15 HN58C1001FP-15E HN58C1001T-15 HN58C1001T-15E REJ03C0145-0800Z
    Text: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0145-0800Z (Previous ADE-203-028G (Z) Rev.7.0) Rev. 8.00 Nov. 27. 2003 Description Renesas Technology's HN58C1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced


    Original     		PDF HN58C1001 128-kword REJ03C0145-0800Z ADE-203-028G 131072word 128-byte HN58C1001 Series HN58C1001-15 HN58C1001P-15 HN58C1001FP-15 HN58C1001FP-15E HN58C1001T-15 HN58C1001T-15E REJ03C0145-0800Z

    Renesas mnos

    Abstract: No abstract text available
    Text: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0145-0800Z (Previous ADE-203-028G (Z) Rev.7.0) Rev. 8.00 Nov. 27. 2003 Description Renesas Technology's HN58C1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced


    Original     		PDF HN58C1001 128-kword REJ03C0145-0800Z ADE-203-028G 131072word 128-byte Renesas mnos

    Untitled

    Abstract: No abstract text available
    Text: HRU0302A Silicon Schottky Barrier Diode for Rectifying REJ03G0151-0800Z Previous: ADE-208-235G Rev.8.00 Dec.15.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.


    Original     		PDF HRU0302A REJ03G0151-0800Z ADE-208-235G) HRU0302A

    Untitled

    Abstract: No abstract text available
    Text: HRW0302A Silicon Schottky Barrier Diode for Rectifying REJ03G0156-0800Z Previous: ADE-208-015G Rev.8.00 Dec.15.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF HRW0302A REJ03G0156-0800Z ADE-208-015G) HRW0302A

    HSU88

    Abstract: No abstract text available
    Text: HSU88 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0140-0800Z Previous: ADE-208-077G Rev.8.00 Nov.06.2003 Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.


    Original     		PDF HSU88 REJ03G0140-0800Z ADE-208-077G) HSU88

    Renesas mnos

    Abstract: No abstract text available
    Text: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0146-0800Z (Previous ADE-203-314G (Z) Rev. 7.0) Rev. 8.00 Nov. 28. 2003 Description Renesas Technology's HN58V1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced


    Original     		PDF HN58V1001 128-kword REJ03C0146-0800Z ADE-203-314G 131072word 128-byte Renesas mnos

    HN58V1001

    Abstract: HN58V1001T HN58V1001FP-25 HN58V1001FP-25E HN58V1001T-25 HN58V1001T-25E
    Text: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0146-0800Z (Previous ADE-203-314G (Z) Rev. 7.0) Rev. 8.00 Nov. 28. 2003 Description Renesas Technology's HN58V1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced


    Original     		PDF HN58V1001 128-kword REJ03C0146-0800Z ADE-203-314G 131072word 128-byte HN58V1001T HN58V1001FP-25 HN58V1001FP-25E HN58V1001T-25 HN58V1001T-25E

    HD74LV1GT126A

    Abstract: HD74LV1GT126ACME HD74LV1GT126AVSE
    Text: HD74LV1GT126A Bus Buffer Gate with 3–state Output / CMOS Logic Level Shifter REJ03D0124–0800Z Previous ADE-205-333F (Z Rev.8.00 Sep.25.2003 Description The HD74LV1GT126A has a bus buffer gate with 3–state output in a 5 pin package. Output is disabled


    Original     		PDF HD74LV1GT126A REJ03D0124 0800Z ADE-205-333F HD74LV1GT126A HD74LV1GT126ACME HD74LV1GT126AVSE

    HD74HC1G66

    Abstract: HD74HC1G66CME HD74HC4066
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    HD74LV1GT125A

    Abstract: HD74LV1GT125ACME HD74LV1GT125AVSE
    Text: HD74LV1GT125A Bus Buffer Gate with 3–state Output / CMOS Logic Level Shifter REJ03D0123–0800Z Previous ADE-205-332F (Z Rev.8.00 Sep.24.2003 Description The HD74LV1GT125A has a bus buffer gate with 3–state output in a 5 pin package. Output is disabled


    Original     		PDF HD74LV1GT125A REJ03D0123 0800Z ADE-205-332F HD74LV1GT125A HD74LV1GT125ACME HD74LV1GT125AVSE

    HD74LV1GT04A

    Abstract: HD74LV1GT04ACME HD74LV1GT04AVSE
    Text: HD74LV1GT04A Inverter / CMOS Logic Level Shifter REJ03D0117–0800Z Previous ADE-205-327F (Z Rev.8.00 Sep.24.2003 Description The HD74LV1GT04A has an inverter in a 5 pin package. The input protection circuitry on this device allows over voltage tolerance on the input, allowing the device to be used as a logic–level translator from


    Original     		PDF HD74LV1GT04A REJ03D0117 0800Z ADE-205-327F HD74LV1GT04A HD74LV1GT04ACME HD74LV1GT04AVSE

    HD74HC1G66

    Abstract: HD74HC1G66CME HD74HC4066
    Text: HD74HC1G66 Analog Switch REJ03D0188–0800Z Previous ADE-205-314F (Z Rev.8.00 Jan.27.2004 Description The HD74HC1G66 is high-speed CMOS analog switch using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed. The device has low ON resistance for good transfer


    Original     		PDF HD74HC1G66 REJ03D0188 0800Z ADE-205-314F HD74HC1G66 HD74HC4066 HD74HC1G66CME HD74HC4066

    HD74LV1GT32A

    Abstract: HD74LV1GT32ACME HD74LV1GT32AVSE
    Text: HD74LV1GT32A 2–input OR Gate / CMOS Logic Level Shifter REJ03D0120–0800Z Previous ADE-205-330F (Z Rev.8.00 Sep.24.2003 Description The HD74LV1GT32A is high-speed CMOS two input OR gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high-speed equivalent to LS–TTL series. The internal circuit of


    Original     		PDF HD74LV1GT32A REJ03D0120 0800Z ADE-205-330F HD74LV1GT32A HD74LV1GT32ACME HD74LV1GT32AVSE

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    HD74LV1GT00A

    Abstract: HD74LV1GT00ACME HD74LV1GT00AVSE
    Text: HD74LV1GT00A 2–input NAND Gate / CMOS Logic Level Shifter REJ03D0115–0800Z Previous ADE-205-325F (Z Rev.8.00 Sep.22.2003 Description The HD74LV1GT00A is high-speed CMOS two input NAND gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high-speed equivalent to LS–TTL series. The internal circuit of


    Original     		PDF HD74LV1GT00A REJ03D0115 0800Z ADE-205-325F HD74LV1GT00A HD74LV1GT00ACME HD74LV1GT00AVSE

    ADE-205-326F

    Abstract: HD74LV1GT02A HD74LV1GT02ACME HD74LV1GT02AVSE
    Text: HD74LV1GT02A 2–input NOR Gate / CMOS Logic Level Shifter REJ03D0116–0800Z Previous ADE-205-326F (Z Rev.8.00 Sep.24.2003 Description The HD74LV1GT02A is high-speed CMOS two input NOR gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high-speed equivalent to LS–TTL series. The internal circuit of


    Original     		PDF HD74LV1GT02A REJ03D0116 0800Z ADE-205-326F HD74LV1GT02A ADE-205-326F HD74LV1GT02ACME HD74LV1GT02AVSE