JEDEC-JESD47
Abstract: vs-mbr745
Text: VS-MBR7.PbF Series, VS-MBR7.-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 7.5 A FEATURES Base cathode 2 • 150 °C TJ operation • High frequency operation • Low forward voltage drop 3 Anode 1 Cathode TO-220AC • High purity, high temperature epoxy
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O-220AC
O-220AC
2002/95/EC
JEDEC-JESD47
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
JEDEC-JESD47
vs-mbr745
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Untitled
Abstract: No abstract text available
Text: VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • Hyperfast recovery time • Benchmark ultralow forward voltage drop • 175 °C operating junction temperature TO-220 FULL-PAK
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VS-8ETX06PbF,
VS-8ETX06-N3,
VS-8ETX06FPPbF,
VS-8ETX06FP-N3
O-220AC
O-220
E78996
2002/95/EC
JEDEC-JESD47
VS-8ETX06PbF
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40ETS12
Abstract: No abstract text available
Text: VS-20ETS16PbF, VS-20ETS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 20 A FEATURES Base cathode 2 • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47 2 3 1 TO-220AC
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VS-20ETS16PbF,
VS-20ETS16-M3
JEDEC-JESD47
O-220AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
40ETS12
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Untitled
Abstract: No abstract text available
Text: 15TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 15 A FEATURES Base cathode 2 TO-220AC 1 Cathode 3 Anode • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency
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15TT100
O-220AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-15ETH06HN3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A Fred Pt FEATURES • Hyperfast recovery time Base cathode 2 • Low forward voltage drop • 175 °C operating junction temperature 2 • Low leakage current 3 1 • Single die center tap module
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VS-15ETH06HN3
O-220AC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-HFA08TB120HN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 2 whisker test 2 • Material categorization:
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VS-HFA08TB120HN3
AEC-Q101
O-220AC
VS-HFA08TB120HN3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-15ETL06HN3 www.vishay.com Vishay Semiconductors Ultralow VF Hyperfast Rectifier for Discontinuous Mode PFC, 15 A FRED Pt FEATURES • Hyperfast recovery time • Benchmark ultralow forward voltage drop • 175 °C operating junction temperature • Low leakage current
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VS-15ETL06HN3
O-220AC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 18TT045-F Vishay High Power Products High Performance Schottky Generation 5.0, 18 A FEATURES Base cathode 2 TO-220AC 1 Cathode 3 Anode • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency
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18TT045-F
O-220AC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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VS-30ETH06PBF
Abstract: No abstract text available
Text: VS-30ETH06PbF Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Base cathode 2 • Reduced Qrr and soft recovery • 175 °C TJ maximum • For PFC CRM/CCM operation • Low forward voltage drop • Low leakage current 1 Cathode TO-220AC 3
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VS-30ETH06PbF
O-220AC
2002/95/EC
O-220AC
11-Mar-11
VS-30ETH06PBF
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VS-20L15TPBF
Abstract: No abstract text available
Text: VS-20L15TPbF, VS-20L15T-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 20 A FEATURES • 125 °C TJ operation VR < 5 V Base cathode 2 • Single diode configuration • Optimized for OR-ing applications • Ultra low forward voltage drop TO-220AC
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VS-20L15TPbF,
VS-20L15T-N3
2002/95/EC
JEDEC-JESD47
O-220AC
O-220AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
VS-20L15TPBF
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Untitled
Abstract: No abstract text available
Text: VS-8ETH06PbF, VS-8ETH06FPPbF Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-220AC • Low leakage current TO-220 FULL-PAK • Fully isolated package VINS = 2500 VRMS
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VS-8ETH06PbF,
VS-8ETH06FPPbF
O-220AC
O-220
E78996
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-MUR1520PbF Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt FEATURES Base cathode 2 • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current TO-220AC • Compliant to RoHS Directive 2002/95/EC
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VS-MUR1520PbF
2002/95/EC
O-220AC
VS-MUR1520PbF
O-220AC
11-Mar-11
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H1 MARKING CODE VISHAY
Abstract: VS-20ETF06-M3 vs-20etf06 20ETF06PBF VS-20ETF06PBF
Text: VS-20ETF0…PbF Series, VS-20ETF0…-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A FEATURES • 150 °C max operating junction temperature Base cathode 2 • Low forward voltage drop and short reverse recovery time
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VS-20ETF0.
JEDEC-JESD47
O-220AC
2002/95/EC
O-220AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
H1 MARKING CODE VISHAY
VS-20ETF06-M3
vs-20etf06
20ETF06PBF
VS-20ETF06PBF
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Untitled
Abstract: No abstract text available
Text: VS-8ETX06PbF, VS-8ETX06FPPbF Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • Hyperfast recovery time • Benchmark ultralow forward voltage drop • 175 °C operating junction temperature TO-220 FULL-PAK TO-220AC • Low leakage current
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Original
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PDF
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VS-8ETX06PbF,
VS-8ETX06FPPbF
O-220AC
O-220
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VS-HFA15TB60PbF www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 15 A FEATURES • • • • Base cathode 2 TO-220AC 1 Cathode BENEFITS • • • • • 3 Anode TO-220AC IF AV 15 A VR 600 V VF at IF 1.7 V trr (typ.) 23 ns
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VS-HFA15TB60PbF
2002/95/EC
O-220AC
VS-HFA15TB60PbF
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-12TQ.PbF Series, VS-12TQ.-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 15 A FEATURES Base cathode 2 • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
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Original
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PDF
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VS-12TQ.
2002/95/EC
JEDEC-JESD47
O-220AC
O-220AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY - REVISIONS LOC DW DESCRIPTION LTR B3 REVISED PER ECO- DATE DWN RK HMR 07MAR11 -005301 APVD NOTES: DIM D 7 .0 0 +0.05 3.55o -, D 1 . MATERIALS: ^ 2.65o 2 HOUSING: THERMOPLASTIC, U L94- V0, COLOR: NATURAL.
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07MAR11
UL94-V0,
100ju"
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1-1734448-3
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY - DIST R E V IS IO N S DW DESCRIPTION LTR REVISED PER ECO- DWN DATE RK HMR 07MAR11 -005301 APVD OY 4P fin+n ns D D #50 B B B B B B B B B B B m B B B a a a a a a a a
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07MAR11
9X12X0
1-1734448-3
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ny9t
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY - REVISIONS DW DESCRIPTION LTR A1 REVISED PER ECO- DATE 07MAR11 -005301 DWN APVD RK HMR D D 1+n PCB EDGE -Y- 47.04 x.xx P0SN #1 -X- 03.18+0.08 >>- |-$ -|0 O .1 O © |x |Y
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07MAR11
ny9t
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HU 20001
Abstract: PBT 30gf
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY - REVISIONS LOC DW DESCRIPTION LTR REVISED PER ECO- 07MAR11 -005301 D o o C 14.5 PIN 1 1 7.50 APVD RK HMR D 00.90 + 0.08 DIM A 13.10 DWN DATE L0 G 0& DATE CODE
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07MAR11
UL94V-0,
762//m
048//m
27/zm
762/zm
390mm,
165mm,
HU 20001
PBT 30gf
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT BY - RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S DW DESCRIPTION LTR RE VI S E D PER E C O- DWN DATE RK HMR 07MAR11 -005301 APVD DIM.A NOT E: 1 . MA T ER I A L : HOUSING: P A 4 6 , UL CONTACTS: BRASS.
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07MAR11
27/jm
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990pc
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY - REVISIONS LOC DW DESCRIPTION LTR A1 REVISED PER ECO- DATE 07MAR11 -005301 DWN APVD RK HMR NOTES: 1. M ATERIAL : 3 0 .8 0 + 0 . 1.1 HOUSING: TH ER M O P LA STIC , U L 9 4 V - 0
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07MAR11
100ju"
990pc
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T200-2
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY - R E V IS IO N S DW DESCRIPTION LTR REVISED PER ECO- DWN DATE RK HMR 07MAR11 -005301 APVD D 1.88 oi o o o _i CL LO _ i Ò CL CM CM o O CM CM 00 5.00 C B + 0.20
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07MAR11
1470365-X
T2002
T200-2
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1734595-3
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY - DIST REVISIONS DW DESCRIPTION LTR A4 DIM. REVISED PER ECO- DWN DATE 07MAR11 -005301 APVD RK HMR DIM. B B DIM. A + 0 .1 0 4.2 o CD C\l PIN RECOMMENDED PCB LAYOUT
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07MAR11
27/zm
27/xm
SPEC00779
1734595-3
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