AN1294
Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
Text: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package
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PD57006-E
PD57006S-E
945MHz
PowerSO-10RF
PD57006
PowerSO-10RF.
PD570and
AN1294
PD57006-E
PD57006S
PD57006S-E
PD57006STR-E
PD57006TR-E
PD57006E
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VIPer53a
Abstract: CVP53-002 cramer transformers VIPER53 AN2000 2700uF 16V Capacitor Electrolytic LTV817A Cramer coil VIPER53 EQUIVALENT 5KE220A
Text: AN2000 Application note VIPower: VIPer53A dual output reference board 90 to 264 VAC input, 24W output Introduction This is an off-line wide range VIPer53 dual output reference board that is set up for secondary regulation through an optocoupler. This design is geared towards any general
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AN2000
VIPer53A
VIPer53
PowerSO-10.
CVP53-002
cramer transformers
AN2000
2700uF 16V Capacitor Electrolytic
LTV817A
Cramer coil
VIPER53 EQUIVALENT
5KE220A
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JESD97
Abstract: No abstract text available
Text: ESDALC6V1F2 Quad low capacitance Transil array for ESD protection Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: • Computers ■ Printers ■ Communication systems and cellular phones ■ Video equipment
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m25pe16 package SO8w
Abstract: M25PE16
Text: M25PE16 16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout Features • SPI bus compatible Serial interface ■ 16-Mbit Page-Erasable Flash memory ■ Page size: 256 bytes – Page Write in 11 ms typical
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M25PE16
16-Mbit
8015h)
m25pe16 package SO8w
M25PE16
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5 bit binary multiplier
Abstract: KDS 6.000 MHZ crystal M41T93 VSOJ20 AI11822
Text: M41T93 Serial SPI bus RTC with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital
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M41T93
SOX18)
QFN16,
M41T93S:
M41T93R:
M41T93Z:
5 bit binary multiplier
KDS 6.000 MHZ crystal
M41T93
VSOJ20
AI11822
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M41T93
Abstract: No abstract text available
Text: M41T93 Serial SPI bus real-time clock with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital
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M41T93
SOX18)
QFN16,
M41T93S:
M41T93R:
M41T93Z:
M41T93
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AN1294
Abstract: J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E
Text: PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description
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PD57030-E
PowerSO-10RF
PowerSO-10RF.
AN1294
J-STD-020B
PD57030-E
PD57030S-E
PD57030STR-E
PD57030TR-E
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D12NF
Abstract: d12nf06
Text: STD12NF06-1 STD12NF06 N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSSS RDS on ID STD12NF06 60V <0.1Ω 12A STD12NF06-1 60V <0.1Ω 12A • Exceptional dv/dt capability ■ Low gate charge 3 3 2 1 DPAK 1 IPAK
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STD12NF06-1
STD12NF06
STD12NF06
STD12NF06-1
STD12NF06T4
D12NF06
D12erein
D12NF
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Untitled
Abstract: No abstract text available
Text: M25PE16 16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50-MHz SPI bus, standard pinout Preliminary Data Feature summary • SPI bus compatible Serial interface ■ 16-Mbit Page-Erasable Flash memory ■ Page size: 256 bytes
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M25PE16
50-MHz
16-Mbit
8015h)
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D12NF
Abstract: D12N STD12NF06 STD12NF06T4 STD12NF06T4-1 STD12NF06T4T4 d12nf06
Text: STD12NF06 STD12NF06T4 N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK STripFET II Power MOSFET Features Type VDSSS RDS on ID STD12NF06 60V <0.1Ω 12A STD12NF06T4 60V <0.1Ω 12A • Exceptional dv/dt capability ■ Low gate charge 3 3 2 1 DPAK 1 IPAK Applications
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STD12NF06
STD12NF06T4
D12NF
D12N
STD12NF06
STD12NF06T4
STD12NF06T4-1
STD12NF06T4T4
d12nf06
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D12NF
Abstract: D12N STD12NF06 STD12NF06T4 STD12NF06T4-1 STD12NF06T4T4 d12nf06
Text: STD12NF06 STD12NF06T4 N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK STripFET II Power MOSFET Features Type VDSSS RDS on ID STD12NF06 60V <0.1Ω 12A STD12NF06T4 60V <0.1Ω 12A • Exceptional dv/dt capability ■ Low gate charge 3 3 2 1 DPAK 1 IPAK Applications
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STD12NF06
STD12NF06T4
D12NF
D12N
STD12NF06
STD12NF06T4
STD12NF06T4-1
STD12NF06T4T4
d12nf06
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JESD97
Abstract: DIODE marking le st
Text: ESDALC6V1C2 Quad low capacitance TRANSIL array for ESD protection Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: • Computers ■ Printers ■ Communication systems and cellular phones ■ Video equipment
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D12NF
Abstract: D12N JESD97 STD12NF06 STD12NF06-1 STD12NF06T4 d12nf06
Text: STD12NF06-1 STD12NF06 N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSSS RDS on ID STD12NF06 60V <0.1Ω 12A STD12NF06-1 60V <0.1Ω 12A • Exceptional dv/dt capability ■ Low gate charge 3 3 2 1 DPAK 1 IPAK
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STD12NF06-1
STD12NF06
D12NF
D12N
JESD97
STD12NF06
STD12NF06-1
STD12NF06T4
d12nf06
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Untitled
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet TOP View LEDs With Black Surface 67-01/YSC-HT2U1B/2T Features ․P-LCC-2 package. ․White package with black top surface. ․Optical indicator. ․Colorless clear window. ․Wide viewing angle. ․Suitable for vapor-phase reflow, Infrared reflow
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67-01/YSC-HT2U1B/2T
DES-671-B13
07-Aug-2006
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JESD97
Abstract: No abstract text available
Text: ESDALC6V1F2 Quad low capacitance TRANSIL array for ESD protection Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: • Computers ■ Printers ■ Communication systems and cellular phones ■ Video equipment
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JESD97
Abstract: ST datecode
Text: ESDALC6V1C2 Quad low capacitance TRANSIL array for ESD protection Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: • Computers ■ Printers ■ Communication systems and cellular phones ■ Video equipment
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Untitled
Abstract: No abstract text available
Text: PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description
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PD57030-E
PowerSO-10RF
PowerSO-10RF.
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st m25pe16
Abstract: M25PE16
Text: M25PE16 16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50-MHz SPI bus, standard pinout Preliminary Data Feature summary • Industrial standard SPI pinout ■ 16 Mbits of Page-Erasable Flash memory ■ Page Write up to 256 bytes in 11 ms (typical)
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M25PE16
50-MHz
8015h)
st m25pe16
M25PE16
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ST7MDT20J-EPB
Abstract: AN2366 SDIP32 SDIP42 ST72324 ST72324B ST72F324 ST7MDT20J-EMU3 TQFP32 TQFP44
Text: AN2366 Application note Guidelines for migrating ST72F324 or ST72324 ROM applications to ST72F324B or ST72324B (ROM) Introduction This application note provides information on using ST72F324B, ST72324B (ROM) microcontroller devices in applications originally designed for the ST72F324 and ST72324
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AN2366
ST72F324
ST72324
ST72F324B
ST72324B
ST72F324B,
ST72F324,
ST7MDT20J-EPB
AN2366
SDIP32
SDIP42
ST72324
ST72324B
ST7MDT20J-EMU3
TQFP32
TQFP44
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c4458
Abstract: "VFQFPN8 mp 6 x 5" m25pe16 package SO8w M25PE16 12-Apr-2007 1BF00
Text: M25PE16 16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout Features • SPI bus compatible serial interface ■ 16-Mbit page-erasable Flash memory ■ Page size: 256 bytes – Page write in 11 ms typical – Page program in 0.8 ms (typical)
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M25PE16
16-Mbit,
16-Mbit
8015h)
64-Kbyte
c4458
"VFQFPN8 mp 6 x 5"
m25pe16 package SO8w
M25PE16
12-Apr-2007
1BF00
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PD57030-E
Abstract: 945 TRANSISTOR PD57030S AN1294 J-STD-020B PD57030S-E PD57030STR-E PD57030TR-E
Text: PD57030-E PD57030S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package
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PD57030-E
PD57030S-E
PowerSO-10RF
PowerSO-10RF.
PD57030-E
945 TRANSISTOR
PD57030S
AN1294
J-STD-020B
PD57030S-E
PD57030STR-E
PD57030TR-E
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D10NF10
Abstract: STD10NF10 JESD97 STD10NF10-1 STD10NF10T4
Text: STD10NF10 STD10NF10-1 N-channel 100V - 0.115Ω - 13A - DPAK - IPAK Low gate charge STripFET II Power MOSFET General features Type VDSSS RDS on ID STD10NF10 100V <0.13Ω 13A STD10NF10-1 100V <0.13Ω 13A • Exceptional dv/dt capability ■ Application oriented characterization
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STD10NF10
STD10NF10-1
D10NF10
STD10NF10
JESD97
STD10NF10-1
STD10NF10T4
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YCL-PTC1111-01G
Abstract: tibbo em1000 YCL-PH163112 EM100 tibbo schematic circuit adsl router part list em202 EM1000 YCL-20F001N schematic diagram of a adsl wifi router
Text: Tibbo Ethernet-to-Serial Devices: Hardware, Firmware, PC software This manual also temporary includes the data on BASIC-programmable hardware Copyright Tibbo Technology 2000-2007 I Tibbo Document System Table of Contents Introduction 1 Hardware Manuals 1 Modules
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EM100
-V383
RS422
RS485
YCL-PTC1111-01G
tibbo em1000
YCL-PH163112
tibbo
schematic circuit adsl router part list
em202
EM1000
YCL-20F001N
schematic diagram of a adsl wifi router
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F-95972
Abstract: harting eurl F-95972 harting F-95972 Paris harting connector tb SMC L Connector harting eurl F-95972 Paris Harting TB-60 bellow harting eurl B740
Text: Alle Hechte vorbehalfen/ HU rights resened A P o s i t i on 17 P o s i t i on 18 / P o s i t i on 2 Position 35 19 P o s i t i on 36 /// P o s i t i on Position 20 P o s i t i on / / 1 P o s i t i on 17 P o s i t i on 18 0 2 , 8 ±0.08 I I 0.05 P CB L a y o u t : c o m p o n e n t s i d e
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07Aug2006
12M2006
Ju12006
F-95972
180ct2006
100ct2006
harting eurl F-95972
harting F-95972 Paris
harting connector tb
SMC L Connector
harting eurl F-95972 Paris
Harting TB-60
bellow
harting eurl
B740
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