K9F1208U0C-PCB
Abstract: No abstract text available
Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9F1208U0C
K9F1208R0C
K9F1208B0C
K9F1208X0C
K9F1208U0C-FIB00
\AVNET\09082007\SAMS\K9F1208U0C-PCB0000
07-Sep-2007
K9F1208U0C-JIB00
K9F1208U0C-JIB0T
K9F1208U0C-PCB00
K9F1208U0C-PCB
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SAMSUNG NAND Flash Qualification Report
Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9F1208U0C
K9F1208R0C
K9F1208B0C
K9F1208X0C
K9F1208U0C-FIB00
\AVNET\09082007\SAMS\K9F1208U0C-PIB0T00
07-Sep-2007
K9F1208U0C-JIB00
K9F1208U0C-JIB0T
K9F1208U0C-PCB00
SAMSUNG NAND Flash Qualification Report
K9F1208U0CJIB0
marking date code samsung semiconductor
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Untitled
Abstract: No abstract text available
Text: NAND02G-B2D 2 Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications ■
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NAND02G-B2D
2112-byte/1056-word
TSOP48
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K9F1208U0C-PCB0
Abstract: marking date code samsung semiconductor K9F1208U0C K9F1208U0CPCB0 K9F1208U0C-JIB0 K9F1208U0CJIB0 K9F1208U0C-PIB K9F1208U0CPIB0 K9F1208U0CJIB0T K9F1208U0C-JIB0T
Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9F1208U0C
K9F1208R0C
K9F1208B0C
K9F1208X0C
o824KB
K9F1208U0C-FIB00
K9F1208U0C-JIB00
K9F1208U0C-JIB0T
K9F1208U0C-PCB00
K9F1208U0C-PCB0T
K9F1208U0C-PCB0
marking date code samsung semiconductor
K9F1208U0CPCB0
K9F1208U0C-JIB0
K9F1208U0CJIB0
K9F1208U0C-PIB
K9F1208U0CPIB0
K9F1208U0CJIB0T
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DRAM material declaration
Abstract: No abstract text available
Text: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004
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MR16R1624
MR18R1624
256/288Mbit
16Mx16)
256Mb
16K/32ms
16Mx18)
288Mb
DRAM material declaration
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NAND02GW3B2D
Abstract: NAND02GW3B2DN6 NAND02GR3B2D NAND02G-B2D NAND02GR4B2D bad block ONFI VFBGA63 NAND02GW3B2D-N
Text: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications ■ NAND interface
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NAND02G-B2D
2112-byte/1056-word
TSOP48
VFBGA63
VFBGA63
NAND02GW3B2D
NAND02GW3B2DN6
NAND02GR3B2D
NAND02G-B2D
NAND02GR4B2D
bad block
ONFI
NAND02GW3B2D-N
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Untitled
Abstract: No abstract text available
Text: LRI2K 2048-bit EEPROM tag IC at 13.56 MHz, with 64-bit UID and kill code, ISO 15693 and ISO 18000-3 Mode 1 compliant Features • ISO 15693 standard fully compliant ■ ISO 18000-3 Mode 1 standard fully compliant ■ 13.56 MHz ±7 kHz carrier frequency ■
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2048-bit
64-bit
20and
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3491H
Abstract: No abstract text available
Text: LRI2K 2048-bit EEPROM tag IC at 13.56 MHz, with 64-bit UID and kill code, ISO 15693 and ISO 18000-3 Mode 1 compliant Features • ISO 15693 standard fully compliant ■ ISO 18000-3 Mode 1 standard fully compliant ■ 13.56 MHz ±7 kHz carrier frequency ■
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2048-bit
64-bit
3491H
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2007 RELEASED FOR PUBLICATION 6 5 4 3 2 2007 LOC AD ALL RIGHTS RESERVED. Tyco Electronics AMP GmbH 1 REVISIONS DIST 00 P LTR C 7 X Y FINISHED HOLE SIZE AND PLATED THRU HOLES 5 DATE REVISED PER ECO-13-002771 DWN
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ECO-13-002771
26FEB2013
GR-1217-CORE
07SEP2007
25AUG2008
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SAMSUNG NAND Flash Qualification Report
Abstract: No abstract text available
Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9F1208U0C
K9F1208R0C
K9F1208B0C
K9F1208X0C
K9F1208U0C-FIB00
\AVNET\09082007\SAMS\K9F1208U0C-PIB0000
07-Sep-2007
K9F1208U0C-JIB00
K9F1208U0C-JIB0T
K9F1208U0C-PCB00
SAMSUNG NAND Flash Qualification Report
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M395T5166AZ4
Abstract: DDR3 ECC SODIMM Fly-By Topology DFX SAMSUNG
Text: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb A-die RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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240pin
M395T5166AZ4-CD5
Q1/2006
Q3/2006
M395T5166AZ4-CE6
Q2/2006
432KB
M395T5166AZ4
DDR3 ECC SODIMM Fly-By Topology
DFX SAMSUNG
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K7Q161862B-EC16
Abstract: ntram
Text: K7Q163662B K7Q161862B 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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K7Q163662B
K7Q161862B
512Kx36-bit,
1Mx18-bit
512Kx36
1Mx18
K7Q161862B-EC16
ntram
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Untitled
Abstract: No abstract text available
Text: SODIMM DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC 68FBGA & 84FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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200pin
64-bit
68FBGA
84FBGA
Q1/2006
M470T5669AZ0-CE6
396KB
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"MATERIAL DECLARATION SHEET"
Abstract: M470T5663CZ3
Text: SODIMM DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb C-die 64-bit Non-ECC 60FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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200pin
64-bit
60FBGA
260KB
231KB
M470T5663CZ3-CD5
M470T5663CZ3-CE6
M470T5663CZ3-CE7
M470T5663CZ3-CF7
"MATERIAL DECLARATION SHEET"
M470T5663CZ3
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NAND02GR3B2D
Abstract: No abstract text available
Text: NAND02G-B2D 2 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Target Specification Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications
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NAND02G-B2D
byte/1056
TSOP48
NAND02GR3B2D
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. C D 1 20 RELEASED FOR PUBLICATION REVISIONS ALL RIGHTS RESERVED. BY - 20 COPYRIGHT 2 3 P 1 DATUM AND BASIC DIMENSION ESTABLISHED BY CUSTOMER. 2 MATERIAL HOUSING:POLYESTER OF GLASS FILLED THERMO PLASTIC UL94V-0 , CARRIER AREA
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UL94V-0)
12JUN2014
07SEP2007
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a1s marking
Abstract: block diagram of VCD block diagram of VCD and its functions marking AFI sof marking 3491H
Text: LRI2K 13.56 MHz, 2048-bit EEPROM tag IC with 64-bit UID and kill code, ISO 15693 and ISO 18000-3 Mode 1 compliant Features • ISO 15693 standard fully compliant ■ ISO 18000-3 Mode 1 standard fully compliant ■ 13.56 MHz ±7k Hz carrier frequency ■ To tag: 10% or 100% ASK modulation using
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2048-bit
64-bit
a1s marking
block diagram of VCD
block diagram of VCD and its functions
marking AFI
sof marking
3491H
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i 7814 hs
Abstract: transistor wu4 smd transistor wu1 smd wu1 MA 7815 transistor wu1 REGULATOR IC 7815 FOR maximum 50mA load current REGULATOR cw 7812 wu4 diode REGULATOR IC 7812 SMD
Text: L9952GXP Power management system IC Features • Two 5V low-drop voltage regulators 250mA, 100mA continuous mode ■ Low stand-by current: VBAT stby, 7µA; ,V1 stby, 45µA, (75µA in cycl. sense ■ Window watchdog and fail-safe output ■ Interrupt output
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L9952GXP
250mA,
100mA
SAEJ2602
PowerSSO-36
i 7814 hs
transistor wu4
smd transistor wu1
smd wu1
MA 7815
transistor wu1
REGULATOR IC 7815 FOR maximum 50mA load current
REGULATOR cw 7812
wu4 diode
REGULATOR IC 7812 SMD
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Untitled
Abstract: No abstract text available
Text: PART NUMBER: ± 3g Tri-axis Accelerometer Specifications KXSS5-2057 Rev. 4 Feb-2013 Product Description The KXSS5-2057 is a Tri-axis, silicon micromachined accelerometer with a full-scale output range of +/-3g 29.4 m/s/s . The sense element is fabricated using Kionix’s proprietary plasma micromachining process
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KXSS5-2057
Feb-2013
KXSS5-2057
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AN2278
Abstract: ST72325 RLINK st7 DB9 Sensor connector LM135-LM235-LM335 AN974 LM135 LM235-LM335 M24C02 ST24C02
Text: AN2278 Application note Temperature sensor application using ST LM135 Introduction This application note describes how to develop a temperature sensor application using the ST LM135 temperature sensor. Application development was done on a Raisonance REva
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AN2278
LM135
LM135
ST72325
ST24C02
ST3232
AN2278
RLINK st7
DB9 Sensor connector
LM135-LM235-LM335
AN974
LM235-LM335
M24C02
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. . COPYRIGHT R E l& S B BY TYCO ELECTRONICS CORPORATION. - F6 R P u S liìa U ò n LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S J LTR DESCRIPTION DATE RELEASED 07SEP2007 D DWN APVD S.I LH D • 1: ■1 : AS SHDVN <i>Z REF 5 .6 8 REF
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OCR Scan
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07SEP2007
31MAR2000
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. REl E a S H TÔR P u B l i ì a Tìò n - BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC DIST R E V IS IO N S J AU" RIGHTS RESERVED- DESCRIPTION LTR RELEASED DATE DWN APVD 07SEP2007 S.l LH NDTE D DATUM AND BASIC DIMENSION ESTABLISHED BY CUSTOMER,
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07SEP2007
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 2 THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC GP RESERVED. DIST R E V I S I O N S 00 LTR DESCRIPTION DATE PROPOSED DWN APVD 23FEB2006 RT GG REV PER E C O - 0 7 - 02 I 05 3
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COPYRIGHT20
23FEB2006
07SEP2007
17SEICS
3IMAR2000
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tab 170325
Abstract: No abstract text available
Text: THIS DRAWING IS U N PU BLISH ED . . COPYRIGHT R E l& S B BY TYCO ELECTRONICS CORPORATION. - F6 R P u S l i ìa U ò n DIST LOC ALL RIGHTS R ESERV ED . J R E V IS IO N S LTR DESCRIPTION DATE 0 7 S E P ’07 REVISED DWN APVD J.S S .M TRADE MARK ä iB : 1.
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170324-X,
170325-X.
170326-X
PITCH15
170326-X.
170325-Xv
66NYLON
66NYLDN
CUL94V-0)
tab 170325
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