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Vishay Draloric CR1206D2504K7JS INSTOCK
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Chip 1 Exchange	CR1206D2504K7JS		15,970			1 - 10 - 100 - 1000 - 10000 -	Get Quote

06D2504 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
5SDF06D2504 Abstract: abb 800 Text: 5SDF 06D2504 5SDF 06D2504 Old part no. DM 827-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196	Original	PDF	06D2504 1768/138a, DM/267/08a Aug-11 06D250A Aug-11 5SDF06D2504 abb 800
5SGS 12F2500 Abstract: ABB Typ RGC ITGQM GTO thyristor ABB Text: 5SGS 12F2500  5SGS 12F2500 Old part no. TG 908-1200-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 200 I TAVm = 630	Original	PDF	12F2500 1768/138a, TG/164/05b Mar-12 5SGS 12F2500 ABB Typ RGC ITGQM GTO thyristor ABB
Thyristor snubber Abstract: No abstract text available Text: 5SGS 12F3000 5SGS 12F3000 Old part no. TG 908-1200-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 1 200 I TAVm = 630 I TSM = 10 000	Original	PDF	12F3000 12F3000 12F2500 1768/138a, TG/164/05 Jul-10 Jul-10 Thyristor snubber
Untitled Abstract: No abstract text available Text: 5SGS 16H3000 5SGS 16H3000 Old part no. TG 919-1600-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 1 600 I TAVm = 760 I TSM = 14 000	Original	PDF	16H3000 16H3000 16H2500 1768/138a, TG/170/05 Jul-10 Jul-10
abb cs 400 Abstract: THYRISTOR 1200 5SGS08D2500 Text: 5SGS 08D3000 5SGS 08D3000 Old part no. TG 907-800-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 800 I TAVm = 395 I TSM = 4 500	Original	PDF	08D3000 08D3000 08D2500 1768/138a, TG/161/05 Jul-10 Jul-10 abb cs 400 THYRISTOR 1200 5SGS08D2500
Untitled Abstract: No abstract text available Text: 5SDF 06D3004 5SDF 06D3004 Old part no. DM 827-620-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000	Original	PDF	06D3004 06D3004 06D2504 1768/138a, DM/267/08 Jul-10
5SGS 16H2500 Abstract: No abstract text available Text: 5SGS 16H2500  5SGS 16H2500 Old part no. TG 919-1600-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 600 I TAVm = 760	Original	PDF	16H2500 1768/138a, TG/170/05a Sep-11 5SGS 16H2500
5SGS 08D2500 Abstract: 5SGS08D2500 abb cs 400 igcm abb 800 5SGS Text: 5SGS 08D2500  5SGS 08D2500 Old part no. TG 907-800-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 800 I TAVm = 395	Original	PDF	08D2500 1768/138a, TG/161/05a Sep-11 5SGS 08D2500 5SGS08D2500 abb cs 400 igcm abb 800 5SGS
Untitled Abstract: No abstract text available Text: 5SGS 12F2500  5SGS 12F2500 Old part no. TG 908-1200-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 200 I TAVm = 630	Original	PDF	12F2500 1768/138a, TG/164/05a Sep-11