Untitled
Abstract: No abstract text available
Text: SK 30 MLI 066 Absolute Maximum Ratings Symbol Conditions IGBT 45, 6 ! 6 . :;1 2 !=> . 01 23 . 01 2 IGBT Module SK 30 MLI 066 899 4 < $ . ;9 2 (: $ 89 $ ? 09 4 !=>. 0 ! 4 . (89 4@ 4"5 A 09 4@ 45, B 899 4 Units
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Untitled
Abstract: No abstract text available
Text: SK 30 MLI 066 Absolute Maximum Ratings Symbol Conditions IGBT 45, 6 ! 6 . :;1 2 !=> . 01 23 . 01 2 899 4 < $ . ;9 2 (: $ 89 $ ? 09 4 !=>. 0 ! IGBT Module SK 30 MLI 066 4 . (89 4@ 4"5 A 09 4@ 45, B 899 4 Units
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET Title : WIRE F780 033 000 Series TOOL STRIPPER Issue 10 21 98 Page 1/1 Dimensions : mm GENERAL FROM 16 TO 28 AWG CREATION N°: PEN/EP 98 066 Name:S.D. Date: 10 21 98 Appr.: L.V. Issue Revisions Name Appr. RADIALL 101, rue P. Hoffmann
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Abstract: No abstract text available
Text: SK 30 MLI 066 Absolute Maximum Ratings Symbol Conditions IGBT 45, 6 ! 6 . :;1 2 !=> . 01 23 . 01 2 899 4 < $ . ;9 2 (: $ 89 $ ? 09 4 !=>. 0 ! 4 . (89 4@ 4"5 A 09 4@ 45, B 899 4 Units . 01 2 4"5, SEMITOP 3
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Catalog
Abstract: 100352 IEC 158-1 VDE 0660
Text: PRODUCT SELECTION GUIDE CUSTOM ROPE-LAY CABLESTOLL BRAIDING FLAT WIRE BRAIDING RANDS G BRAID-REINFORCED CAPILLARY TUBING G SINGLE-THICKNESS BRAIDS SCOPE BRAIDS AIDING BRAID-REINFORCED TUBING AIDS SINGLE-THICKNESS BRAIDS BRAID-REINFORCED TUBING BRAIDS REINFORCED CABLES AND STRANDS
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6323 GA
Abstract: transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES x 2.1 ±0.2 1.25 ±0.1 Low noise figure QUANTITY PART NUMBER PACKING STYLE
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NE34018
NE34018
NE34018-T1
NE34018-T2
6323 GA
transistor NEC D 882 p
D413 transistor
D2396
transistor d507
D484 transistor
D2388
transistor d528
transistor D773
d772 transistor
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1492A
Abstract: CPE 2-129 1485a 3043A
Text: INDUSTRIAL AUTOMATION & PROCESS CONTROL CABLES 15.48 Instrumentation Cable 300V Power-Limited Tray Cables Description Part No. No. of Pairs Color Code Standard Lengths Ft. m Standard Unit Weight Lbs. Jacket Thickness Nominal OD Maximum Pull Tension Minimum
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19x29)
U-500
U-10rdant
1492A
CPE 2-129
1485a
3043A
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MS16624
Abstract: MS16625 MS35489 MIL-G-3036 AN931-2-9 ms35489-2 9300 0019 901 704 16 08 55 AN931 AN-931
Text: MS35489 ELASTIC GROMMETS DIMENSIONS inches MS DASH No. OLD “AN” No. A B D T -1 -2 -3 -134 AN931-2-9 -2-16 -3-9 1/8 1/8 1/8 3/16 11/32 3/4 1 1/4 3/4 1/4 9/16 1 9/16 3/16 3/16 1/4 3/16 -4 -5 -6 -7 -3-5 -3-10 -4-7 -4-12 3/16 3/16 1/4 1/4 7/16 7/8 5/8 1
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MS35489
AN931-2-9
MS16624
MS16625
MS35489
MIL-G-3036
AN931-2-9
ms35489-2
9300 0019
901 704 16 08 55
AN931
AN-931
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IEC 269-2
Abstract: abb SACE csa 932 abb ABB SACE S.p.a 930-S 10,3X38 ABB ABB SACE 125 14X51 IEC 947-3 933N
Text: E 930 fuse holders Customized protection for fuses of all sizes 603052/011 The wide range of ABB SACE System pro M modular devices has been extended with the E 930 series of fuse holders with new enhanced performance levels including operating at up to 690 V a.c.
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14x51
22x58
930-S
IEC 269-2
abb SACE
csa 932 abb
ABB SACE S.p.a
10,3X38 ABB
ABB SACE 125
IEC 947-3
933N
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Untitled
Abstract: No abstract text available
Text: 1 1234456789 1 ABCDEF81CEAE1BDE8BBDE38EBE 1 1E3D1D8ECDBB11 1E883DE7B1D1 DE51 F33B81 1 1 1 E5 1 51 !" 1 # 1 "#51 $ 1 D#1 E5 51 51 " 1 6" 5*1 E51 F33B81 #561 E)E1
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ABCDEF81CE
1FGD15
E5165
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2SC5006
Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
2SC5006-T1
"Small Signal Amplifiers"
P1038
TD-2399
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Untitled
Abstract: No abstract text available
Text: RF INDUCTORS - SURFACE MOUNT SML32LF RoHS Unshielded RF Inductors PART L µH ±10% L&Q TEST NUMBER FREQ. MHz SML32-010KLF .010 SML32-012KLF .012 SML32-015KLF .015 SML32-018KLF .018 SML32-022KLF .022 SML32-027KLF .027 SML32-033KLF .033 SML32-039KLF .039 SML32-047KLF .047
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SML32LF
SML32-010KLF
SML32-012KLF
SML32-015KLF
SML32-018KLF
SML32-022KLF
SML32-027KLF
SML32-033KLF
SML32-039KLF
SML32-047KLF
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100-526
Abstract: No abstract text available
Text: RF INDUCTORS - SURFACE MOUNT SML32LF RoHS Unshielded RF Inductors PART L µH ±10% L&Q TEST NUMBER FREQ. MHz SML32-010KLF SML32-012KLF SML32-015KLF SML32-018KLF SML32-022KLF SML32-027KLF SML32-033KLF SML32-039KLF SML32-047KLF SML32-056KLF SML32-068KLF SML32-082KLF
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SML32LF
SML32-010KLF
SML32-012KLF
SML32-015KLF
SML32-018KLF
SML32-022KLF
SML32-027KLF
SML32-033KLF
SML32-039KLF
SML32-047KLF
100-526
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SML32-056K
Abstract: 100-526
Text: RF INDUCTORS - SURFACE MOUNT SML32 Unshielded RF Inductors PART L µH ±10% L&Q TEST NUMBER FREQ. MHz SML32-010K SML32-012K SML32-015K SML32-018K SML32-022K SML32-027K SML32-033K SML32-039K SML32-047K SML32-056K SML32-068K SML32-082K SML32-100K SML32-120K
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SML32
SML32-010K
SML32-012K
SML32-015K
SML32-018K
SML32-022K
SML32-027K
SML32-033K
SML32-039K
SML32-047K
SML32-056K
100-526
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pt 2399
Abstract: 2SC5006 2SC5006-T1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: Adapters 5310 W. Camelback Road Glendale, AZ 85301 USA Tel: 602-245-1050 / 800-528-5567 Fax: 602-931-0684 / 800-344-6358 GILBERT ENGINEERING «. FEMALE SPLICE ADAPTERS iliii FIGURE 1 r Accepts B Dia. Center Conductor TYP T r Accepts B Dia. Center Conductor
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G-1400-436
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Untitled
Abstract: No abstract text available
Text: RF INDUCTORS - SURFACE MOUNT SM 3 Temperature Stable RF Inductors PART NUM BER SM3-010K SM3-012K SM3-015K SM3-018K SM3-022K SM3-027K SM3-033K SM3-039K SM3-047K SM3-056K SM3-068K SM3-082K SM3-100K SM3-120K SM3-150K SM3-180K SM3-220K SM3-270K SM3-330K SM3-390K
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SM3-010K
SM3-012K
SM3-015K
SM3-018K
SM3-022K
SM3-027K
SM3-033K
SM3-039K
SM3-047K
SM3-056K
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NEC K 2500
Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz
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NE34018
NE34018
NE34018-T1
NE34018-T2
NEC K 2500
OLS 049
1689I
DS 4069
k 3531 transistor
6323 GA
NEC 2905
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063 793
Abstract: transistor v63
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain
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NE34018
NE34018
WS60-00-1
IR30-00-3
063 793
transistor v63
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76308
Abstract: 036 906 051
Text: Features • Highly reliable dual metal PV contact for modular and programming applications. • Stackable end-to-end and side to side. • For parallel and right-angle p.c. board mounting. • Mates with 0,64 mm 0.025 inch square and round pins. Spacing
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locator radiall
Abstract: T1520
Text: 101. Rue Philibert H offm ann Zone Industrielle Ouest 93116 - R OSN Y-SO US-BOIS Téléphone : 854-80-40 NOTICE TECHNIQUE TECH N I C A L jugée u tile . Département C O A X IA L TITLE TITRE m o d ific a tio n D A TA E M B A S E A PLATINE UNIVERSAL FLANGE
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
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fsx51x
Abstract: No abstract text available
Text: FSX51X GaAs FET and HEMT Chips ELECTRICAL CHARACTERIST CS Am bient Temperature Ta=25°C Item Symbol Saturated Drain Current IDSS Condition Min. Limit Typ. Max. Unit Vos =3V, VGS =0V 30 60 120 mA Transconductance gm V d S = 3V, Id s =30mA 18 25 - mS Pinch-off Voltage
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FSX51X
fsx51x
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sl2 357
Abstract: No abstract text available
Text: D A TA S H EE T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz • Gate Length: Lg = 0.8 /urn recessed gate • Gate W idth: Wg = 330 /urn • 4 pins super mini mold
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NE72118
NE72118-T1
NE72118-T2
WS60-00-1
IR30-00-2
sl2 357
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