THEFT
Abstract: "Mitsubishi SINGLE CHIP MICROCOMPUTER" c816 M30217MA-XXXXFP M30218 M30218FCFP M30218MC-XXXXFP DSA003632
Text: Mitsubishi single-chip microcomputer M30218 Group User’s manual tentative Specifications written in this user's manual are believed to be accurate, but are not guaranteed to be entirely free of error. Specifications in this manual may be changed for functional or performance improvements. Please make sure your manual is the latest edition.
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M30218
THEFT
"Mitsubishi SINGLE CHIP MICROCOMPUTER"
c816
M30217MA-XXXXFP
M30218FCFP
M30218MC-XXXXFP
DSA003632
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M30218
Abstract: 052b16 CM06 05A11
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M30218
052b16
CM06
05A11
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M30218
Abstract: No abstract text available
Text: n er me nd lop U e v de t Tentative Specifications REV.A1 Description Mitsubishi microcomputers Specifications in this manual are tentative and subject to change. M30218 Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description The M30218 group of single-chip microcomputers are built using the high-performance silicon gate CMOS
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M30218
16-BIT
M16C/60
100-pin
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P216B
Abstract: 035E-16
Text: MITSUBISHI 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/20 SERIES M30218 Group User’s Manual http://www.infomicom.maec.co.jp/indexe.htm Before using this material, please visit the above website to confirm that this is the most current document available.
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16-BIT
M16C/20
M30218
E000016
E7FFF16
E800016
EFFFF16
F000016
F7FFF16
F800016
P216B
035E-16
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MCE OR KDI
Abstract: PCX-050-F-50 DC-12 MIL-R-10509 MIL-R-55342 PCX050-F-150 PCX100-F-150
Text: HIGH POWER COAXIAL TYPE N & SMA TERMIN ATIONS DC-12.4 GHz SERIES PCX CONDUCTION HEAT SINK COOLED PERFORMANCE SPECIFICATIONS: GENERAL INFORMATION: The PCX Series High Power Terminations are designed to dissipate RF power when mounted to a heat sink or chill plate. Power levels from 15 to 150 watts in 50 ohm impedance are available in units with type SMA or Type N connectors. High stability thin film resistive elements on
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DC-12
050-F-50
PCX050-F-150
PCX100-F-150
MCE OR KDI
PCX-050-F-50
MIL-R-10509
MIL-R-55342
PCX050-F-150
PCX100-F-150
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M30218
Abstract: 05B61
Text: n er me nd lop U e v de t Preliminary Specifications REV.A1 Description Mitsubishi microcomputers Specifications in this manual are tentative and subject to change. M30218 Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description The M30218 group of single-chip microcomputers are built using the high-performance silicon gate CMOS
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M30218
16-BIT
M16C/60
100-pin
05B61
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M30218
Abstract: No abstract text available
Text: Mitsubishi microcomputers M30218 Group Description SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description The M30218 group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 100-pin plastic molded QFP. These
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M30218
16-BIT
M16C/60
100-pin
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P216B
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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E000016
E7FFF16
E800016
EFFFF16
F000016
F7FFF16
F800016
FFFFF16
P216B
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Untitled
Abstract: No abstract text available
Text: Mitsubishi single-chip microcomputer M30218 Group User’s manual tentative Specifications written in this user's manual are believed to be accurate, but are not guaranteed to be entirely free of error. Specifications in this manual may be changed for functional or performance improvements. Please make sure your manual is the latest edition.
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M30218
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Untitled
Abstract: No abstract text available
Text: 050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s 050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
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CGHV96050F1
50-ohm,
CGHV96050F1
CGHV96
050F1
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Untitled
Abstract: No abstract text available
Text: 050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s 050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
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CGHV96050F1
50-ohm,
CGHV96050F1
CGHV96
050F1
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CGHV96050F1
Abstract: No abstract text available
Text: 050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s 050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
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CGHV96050F1
50-ohm,
CGHV96050F1
CGHV96
050F1
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510300
Abstract: AAY3 DSP56000 DSP56300 DSP56301 DSP56302 DSP56303 DL155 610300 DSP56000 APR
Text: Freescale Semiconductor Order by APR 25/D Rev. 0 , 4/16/99 by Phil Brewer 1 Introduction This application note describes how to interface external Asynchronous Fast Static Random Access Memory Fast SRAM to Motorola’s DSP56300 family of devices. This document is a supplement to the DSP56300 24-Bit Digital
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DSP56300
24-Bit
510300
AAY3
DSP56000
DSP56301
DSP56302
DSP56303
DL155
610300
DSP56000 APR
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M30218
Abstract: 05A31 DF0001
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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M30218
05A31
DF0001
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510300
Abstract: motorola 510300 DSP56303PV80 DATA MANUALS HP2 800 243 DSP56000 DSP56300 DSP56301 DSP56302 DSP56303
Text: MOTOROLA Order by APR 25/D Motorola Order Number Rev. 0 , 4/16/99 Semiconductor Application Note by Phil Brewer 1 Introduction This application note describes how to interface external Asynchronous Fast Static Random Access Memory (Fast SRAM) to Motorola’s DSP56300 family of devices. This
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DSP56300
24-Bit
Office141
510300
motorola 510300
DSP56303PV80
DATA MANUALS
HP2 800 243
DSP56000
DSP56301
DSP56302
DSP56303
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UP050CH101
Abstract: CE400 UP050B103 p050y ep050 UP050CH221 marking s350 dd0006 UP050CH220J
Text: T v - WU ' J — ' í7 H > x > 1í' AXIAL LEADED CERAMIC CAPACITORS OPERATING TEMP. -2 5 ~ + 8 5 °C L ' g S t 5 B ? o aq < 7 » í f c f r ' ñ J i É V1F£<, n % k ® & T y 7 , £ j* —.X feiÄ'J'' • C la s s 1 p n li[l]iS D S M i$ 'ttiS iE S t> ')i|> ^ IS ^ t4 < D S S ;'ib o B,
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Untitled
Abstract: No abstract text available
Text: HIGH POWER COAXIAL TYPE N & SMA TERMINATIONS DC-12.4 GHz P E R F O R M A N C E S P E C IF IC A T IO N S : GENERAL INFORMATION: The PCX Series High Power Terminations are designed to dissipate RF power when mounted to a heat sink or chill plate. Power levels trom 15 to 150 watts in 50 ohm im
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DC-12
050-F-15
PCX050-F-150
PCX100-F-150
1-884-044S
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