Untitled
Abstract: No abstract text available
Text: TS512, TS512A Precision dual operational amplifier Features • Low input offset voltage: 500 µV max. A version ■ Low power consumption ■ Short-circuit protection ■ Low distortion, low noise ■ High gain-bandwidth product: 3 MHz ■ High channel separation
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TS512,
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TS512
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AN2014
Abstract: stmicroelectronics eeprom AI-117 QNEE9801 stmicroelectronics serial eeproms
Text: AN2014 Application note How a designer can make the most of STMicroelectronics Serial EEPROMs Introduction Electrically erasable and programmable memory EEPROM devices are standard products, used for the non-volatile storage of parameters and fine-granularity data.
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AN2014
stmicroelectronics eeprom
AI-117
QNEE9801
stmicroelectronics serial eeproms
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TS914
Abstract: TS914A 914i
Text: TS914, TS914A Rail-to-rail CMOS quad operational amplifier Features • Rail-to-rail input and output voltage ranges ■ Single or dual supply operation from 2.7 to 16 V ■ Extremely low input bias current: 1 pA typ ■ Low input offset voltage: 5 mV max. (A grade)
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TS914,
TS914A
SO-14
TS914
TS914A
914i
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TS512
Abstract: No abstract text available
Text: TS512, TS512A Precision dual operational amplifier Datasheet - production data Description The TS512 device is a high-performance dual operational amplifier with frequency and phase compensation built into the chip. The internal phase compensation allows stable operation in
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DocID004948
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Untitled
Abstract: No abstract text available
Text: SF10S60F Voltage 600 V 10 Amp Low Loss Superfast Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220A FEATURES High Surge Capacity 150°C Operating Junction Temperature Low Power Loss, High Effciency
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SF10S60F
ITO-220A
04-Feb-2010
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AN2014
Abstract: RL 66 EEPROM SCR POWER SUPPLY SPI EEPROM code flow diagram EEPROM stmicroelectronics "serial eeprom" stmicroelectronics traceability M93C stmicroelectronics eeprom
Text: AN2014 Application note How a designer can make the most of STMicroelectronics Serial EEPROMs Electrically erasable and programmable memory EEPROM devices are standard products, used for the non-volatile storage of parameters and fine-granularity data. There is no single memory technology (SRAM, DRAM, EEPROM, Flash Memory, EPROM,
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AN2014
AN2014
RL 66 EEPROM
SCR POWER SUPPLY
SPI EEPROM code flow diagram
EEPROM
stmicroelectronics "serial eeprom"
stmicroelectronics traceability
M93C
stmicroelectronics eeprom
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4948
Abstract: 512AI
Text: TS512, TS512A Precision dual operational amplifier Datasheet − production data Features • Low input offset voltage: 500 µV max. A version ■ Low power consumption ■ Short-circuit protection ■ Low distortion, low noise ■ High gain bandwidth product: 3 MHz
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TS512,
TS512A
TS512
4948
512AI
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914AI
Abstract: 914i
Text: TS914, TS914A Rail-to-rail CMOS quad operational amplifier Datasheet −production data Features • Rail-to-rail input and output voltage ranges ■ Single or dual supply operation from 2.7 to 16 V ■ Extremely low input bias current: 1 pA typical ■
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PDF
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TS914,
TS914A
SO-14
TS56x
TS914
914AI
914i
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Untitled
Abstract: No abstract text available
Text: TS914, TS914A Rail-to-rail CMOS quad operational amplifier Features • Rail-to-rail input and output voltage ranges ■ Single or dual supply operation from 2.7 to 16 V ■ Extremely low input bias current: 1 pA typ ■ Low input offset voltage: 5 mV max. (A grade)
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TS914,
TS914A
SO-14
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P LTR DESCRIPTION DATE APVD A4 REVISED PER ECO-12-004531 06MAR2012 DLD DCS A5 REVISED PER ECO-13-019501 12DEC2013 DD DS 1 ACCEPTS #4 SELF TAPPING THREAD FORMING SCREWS OR
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ECO-12-004531
06MAR2012
ECO-13-019501
12DEC2013
04FEB2010
22MAR2010
27APR2010
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4948
Abstract: TS512AIYDT TS512 TS512A CL100 pin configuration marking 812 package SO-8
Text: TS512, TS512A Precision dual operational amplifier Features • Low input offset voltage: 500 µV max. A version ■ Low power consumption ■ Short-circuit protection ■ Low distortion, low noise ■ High gain-bandwidth product: 3 MHz ■ High channel separation
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TS512,
TS512A
TS512
4948
TS512AIYDT
TS512A
CL100 pin configuration
marking 812 package SO-8
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Untitled
Abstract: No abstract text available
Text: THIS DRAWI NG IS UNPUBLISHED. RE LEASED ALL C O P Y R I G H T 2 0 06 FOR PUBLICATION RIGHTS REVISIONS RESERVED. LTR B1 CONTACT ARRANGEMENT VIEW TERMINATION SIDE DESCRIPTION DATE ECR-09-026756 DWN APVD ME 04FEB2010 FROM mm ó c 83m EONTAET ARRANGEMENT VIEW
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ECR-09-026756
04FEB2010
SA00-2V
0TFEB2010
V10215A
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Untitled
Abstract: No abstract text available
Text: T H I S DRAWING IS UNPUBLI SHED. RELEASED FOR P UB LI CA TI ON LOC D I ST ALL RIGHTS RESERVED. COPYRIGHT 2006 REVISIONS LTR B1 DE S CR I PTI ON DATE EC R - 0 9 - 0 2 6 7 5 6 DWN APVD ME 04FEB2010 C O N T A C T ARRANGEMENT V I E W FROM EON N E ETI NG S I D E
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04FEB2010
25OV4KV3
40A690V8KV3
10A250V4KV3
0TFEB2010
A20SG0
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Tyco PA66
Abstract: 108-94020
Text: mi il »i i rm T R T r ^ i n i r u n v i n impuri i s Hf_û Lnu h iliTililh il COPYR IGHT2006 _ z l i l h n u n BY R ELEA S ED TYCO FOR P U B L I C A T I ON OCT FREI b— ELEC TR O N IC S PUER V E R O E F F E N T L I C H U N G A LL R IGHTS R E S E R V E D .
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IGHT2006
ECR-0-012158
E-09-012058
04MAR2009
04FEB2010
EGATN08277
E-10-002668
PA66/6
3IMAR2000
Tyco PA66
108-94020
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Untitled
Abstract: No abstract text available
Text: 2 THIS C DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED ALL - FOR PUBLICATION RIGHTS 20 LOC RESERVED. GE DIST REVISIONS oo LTR DESCRIPTION REVISED D6 PER DATE E C O - 11 - 0 0 5 0 3 0 DWN RK I 2 M A R 2 0 11 APVD HMR 60 .8 4 X 47 .4 A C C E P T S #4 S E L F T A P P I N G T H R E A D C U T T I N G S C R E W S
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04FEB2010
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Untitled
Abstract: No abstract text available
Text: 2 THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION INTERNATIONAL 20 RIGHTS LOC RESERVED. GE DIST REVISIONS 00 LTR DESCRIPTION REVISED A3 PER DATE E C O - 10 - 0 0 6 1 6 0 DWN DCS 27APR2010
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27APR2010
04FEB2010
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Untitled
Abstract: No abstract text available
Text: 2 THIS C DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY - RELEASED ALL FOR PUBLICATION RIGHTS 20 LOC RESERVED. GE DIST REVISIONS 00 LTR DESCRIPTION DATE DWN APVD A3 REVISED PER E C O - 10 - 0 0 6 1 6 0 27APR2010 DCS DCS A4 REVISED PER E C O - 12-004531
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27APR2010
04FEB2010
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