03JA
Abstract: JPN 03ja
Text: •使用方法 03JA 検出回転方向 ＋ センサ DCカット AMP A／D 処理回路 JPN 883 1. １個のセンサで１回転軸方向を検出します。 2. 高精度な測定を行うには周囲温度の変化による静止時出力の変動（温度ドリフト）の影響を除去するために、低周波の
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03JA
JPN 03ja
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JPN 03ja
Abstract: 03JA
Text: !APPLICATION Direction of rotation to be detected. 03JA Sensor DC cut AMP A/D Converter Processing circuit JPN 883 1. One sensot per axis of rotation to be detected. 2. For high-precision measurements, the effect of tempreature drift fluctuation of output in stationary state due to changes in ambient
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JPN 03ja
03JA
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CAN43111
Abstract: ANCV spbt2532c2.at 0307-ARAJ00079 SPBT2532C2 bluetooth SPBT2532C2 SPBT2532 2450T18A100S B016360 YAGEO
Text: SPBT2532C2.AT Bluetooth technology class-2 module Features • Bluetooth® specification compliant V2.1 ■ Output power class-2 ■ Transmission rate up to 2 Mbps with EDR ■ Packet types supported: – ACL: DM1, DM3, DM5, DH1, DH3, DH5, 2DH1, 2-DH3, 2-DH5
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SPBT2532C2
CAN43111
ANCV
spbt2532c2.at
0307-ARAJ00079
bluetooth SPBT2532C2
SPBT2532
2450T18A100S
B016360
YAGEO
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Untitled
Abstract: No abstract text available
Text: SQM25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested
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SQM25N15-52
AEC-Q101
O-263
O-263
SQM25N15-52-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SQM120N04-1m9 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 40 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.0019
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SQM120N04-1m9
AEC-Q101
O-263
O-263
SQM120N04-1m9-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SQM85N03-06P www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition PRODUCT SUMMARY VDS (V) 30 RDS(on) () at VGS = 10 V 0.0060 RDS(on) () at VGS = 4.5 V 0.0085 ID (A)
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SQM85N03-06P
AEC-Q101
2002/95/EC
O-263
O-263
SQM85N03-06P-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: SUM50P10-42 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) () Max. ID (A) 0.042 at VGS = - 10 V - 36 0.047 at VGS = - 4.5 V - 29 Qg (Typ.) 54 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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SUM50P10-42
2002/95/EC
O-263
SUM50P10-42-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUM09N20-270 Vishay Siliconix N-Channel 200 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.270 at VGS = 10 V 9 0.300 at VGS = 6 V 8.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package
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SUM09N20-270
2002/95/EC
O-263
SUM09N20-270-E3
25trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUM60N10-17 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 • TrenchFET Power MOSFETS RDS(on) () ID (A) 0.0165 at VGS = 10 V 60 0.0190 at VGS = 6 V 56 • 175 °C Junction Temperature • • • • Low Thermal Resistance Package
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SUM60N10-17
2002/95/EC
O-263
SUM60N10-17-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D
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SUM110P04-05
O-263
SUM110P04-05-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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sum75n06
Abstract: No abstract text available
Text: SUM75N06-09L Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) ID (A) 0.0093 at VGS = 10 V 90 0.0135 at VGS = 4.5 V 62 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT
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SUM75N06-09L
O-263
SUM75N06-09L-E3
10trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sum75n06
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m955
Abstract: M9551 M95512-DF
Text: M95512-W M95512-R M95512-DR M95512-DF 512-Kbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 512 Kb (64 Kbytes) of EEPROM – Page size: 128 bytes SO8 (MN) 150 mil width
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M95512-W
M95512-R
M95512-DR
M95512-DF
512-Kbit
M95512-W
M95512DR
M95512-DF
200-year
m955
M9551
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1833C
Abstract: 308010 793DX 104L 293D 293D335X016A2 D/CRCW-IF e3 D/CRCW-HR e3
Text: 293D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Commercial, Surface Mount FEATURES • Terminations: 100 % Tin, standard SnPb available PERFORMANCE/ELECTRICAL CHARACTERISTICS Operating Temperature: - 55 °C to + 85 °C to + 125 °C with voltage derating
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QC300801/US0001
08-Apr-05
1833C
308010
793DX
104L
293D
293D335X016A2
D/CRCW-IF e3
D/CRCW-HR e3
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Untitled
Abstract: No abstract text available
Text: MC9S12XS256 Reference Manual Covers MC9S12XS Family MC9S12XS256 MC9S12XS128 MC9S12XS64 HCS12 Microcontrollers MC9S12XS256RMV1 Rev. 1.08 05/2009 freescale.com To provide the most up-to-date information, the document revision on the World Wide Web is the most
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MC9S12XS256
MC9S12XS
MC9S12XS128
MC9S12XS64
HCS12
MC9S12XS256RMV1
S12XS
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AN1995
Abstract: M25P40
Text: M25P40 4 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface Feature summary • 4 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 1.5ms (typical) ■ Sector Erase (512 Kbit) in 1s (typical) ■ Bulk Erase (4 Mbit) in 4.5s (typical)
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M25P40
50MHz
2013h)
M25P40and
AN1995
M25P40
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of heat sink
Abstract: No abstract text available
Text: Package Information Vishay Siliconix TO-263 D2PAK : 3-LEAD INCHES -B- L2 -A- c2 D2 D3 A E E1 K D D1 E3 6 L c* L3 c1 A A b2 b e c Detail “A” E2 c c1 L1 b b1 M 0° L4 -5 ° 0.010 M A M 2 PL MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508
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O-263
T10-0738-Rev.
03-Jan-11
03-Jan-11
of heat sink
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Untitled
Abstract: No abstract text available
Text: SQM50P08-25L www.vishay.com Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • Package with Low Thermal Resistance
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SQM50P08-25L
AEC-Q101
O-263
O-263
SQM50P08-25L-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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OS-14
Abstract: QQ-S-365 os14
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AJ R E V IS IO N S DIST 16 LTR DESCRIPTION G REVISED PER EC OS14 - 0 4 4 9 - 0 4 DATE DWN APVD 03JAN 05 BM JL D BRASS TIN -A DIA
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OS14-0449-04
03JAN05
QQ-B-626
ASTM-B-545
QQ-S-365
ASTM-B488
QQ-N-290
O7-09MSD
OS-14
os14
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AJ DIST R E VIS IO N S 16 LTR DESCRIPTION AU .5 1 6 REF .531 2 16 .328 APVD 03JA N 05 BM JL .3 1 2 I .572 DWN REF D V IE W
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31MAR2000
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST AD 00 LTR DESCRIPTION B' CONTAC REV PER EC O —0 7 —0 0 0 1 5 0 DATE DWN APVD 03JAN2007 BC GG CONTACT LAYOU
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03JAN2007
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 T H 1S DRAW 1NG 1S UNPUBLI SHED. COPYRI GHT 20 3 RELEASED FOR PUBLI CATI ON BY TYCO ELECTRONI CS CORPORAT 1ON. ALL RI GHT S 2 20 LOC 00 GP RESERVED. REV 1S 1ONS DI S T p LT R DESCR1PTI ON A A1 1 0 . 0 DATE DWN APVD RELEASED PER ECO- 0 5 - 015 609 03JAN2006
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03JAN2006
05JUN2000
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A4840
Abstract: No abstract text available
Text: 6 7 T H IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D ALL COPYRIGHT - FOR 5 4 3 2 PU B LIC ATIO N RIG HTS LOC REVISIONS D IS T AD 00 R E S ER V ED . BY TYCO ELECTRONICS CORPORATION. I.C LTR D E S C R IP T IO N DATE DWN A ECO—05 —01 3690 03JAN 05 A1
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03JAN05
19JAN
22APR05
31MAR2000
11JAN06
us001193
A4840
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25X0
Abstract: No abstract text available
Text: THIS DRAWING IS UNPU BLISH ED. RELEASED FOR PUBLICATION LOC COPYRIGHT - DIST CE 16 ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. REVISIONS LTR K DESCRIPTION DWN DATE REVISED PER 0 A 4 0 - 0 6 3 4 - 0 4 APVD JWD JD 03JAN05 D 0.1 5 1 0 . 0 3 [ 6 ± 1 ]
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0A40-0634-04
03JAN05
2-5031G2-5
5031G2â
2-5031G2-1
2-5Q31G2-0
1-5031G2-9
1-5031G2-3
25X0
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. AA ^0 COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 2 3 - LOC ALL RIGHTS RESERVED. D IS T R E V IS IO N S 00 GP P LTR H1 DESCRIPTION DATE 03JAN06 REVISED PER E C O - 0 6 - 0 1 5 2 7 8 DWN APVD
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03JAN06
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